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    Light emitting diode and fabrication thereof
    1.
    发明授权
    Light emitting diode and fabrication thereof 失效
    发光二极管及其制造

    公开(公告)号：US08278645B2

    公开(公告)日：2012-10-02

    申请号：US12503714

    申请日：2009-07-15

    Applicant: Tzu Chien Hong ,  Chia Hui Shen ,  Chih Pang Ma ,  Chih Peng Hsu ,  Shih Hsiung Chan

    Inventor： Tzu Chien Hong ,  Chia Hui Shen ,  Chih Pang Ma ,  Chih Peng Hsu ,  Shih Hsiung Chan

    IPC: H01L27/15

    CPC classification number: H01L33/0079 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46

    Abstract: A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing the resistance to avoid the power loss. In addition, the light emitting diode further comprises a buffer layer sandwiched between the metal reflective layer and a semiconductor layer, wherein the buffer layer is mixed with metal and non-metallic transparent material for reducing the stress between the semiconductor and the metal to decrease the possibility of the die cracking.

    Abstract translation: 公开了一种发光二极管，其中发光二极管包括用于增强发光二极管内的光反射效率的金属反射层，并降低电阻以避免功率损耗。 此外，发光二极管还包括夹在金属反射层和半导体层之间的缓冲层，其中缓冲层与金属和非金属透明材料混合，以减少半导体和金属之间的应力，以减少 模具开裂的可能性。

    LIGHT EMITTING DIODE AND FABRICATION THEREOF
    2.
    发明申请
    LIGHT EMITTING DIODE AND FABRICATION THEREOF 失效
    发光二极管及其制造方法

    公开(公告)号：US20100012962A1

    公开(公告)日：2010-01-21

    申请号：US12503714

    申请日：2009-07-15

    Applicant: TZU CHIEN HONG ,  CHIA HUI SHEN ,  CHIH PANG MA ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

    Inventor： TZU CHIEN HONG ,  CHIA HUI SHEN ,  CHIH PANG MA ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

    IPC: H01L33/00 ,  H01L21/00

    CPC classification number: H01L33/0079 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46

    Abstract: A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing the resistance to avoid the power loss. In addition, the light emitting diode further comprises a buffer layer sandwiched between the metal reflective layer and a semiconductor layer, wherein the buffer layer is mixed with metal and non-metallic transparent material for reducing the stress between the semiconductor and the metal to decrease the possibility of the die cracking.

    Abstract translation: 公开了一种发光二极管，其中发光二极管包括用于增强发光二极管内的光反射效率的金属反射层，并降低电阻以避免功率损耗。 此外，发光二极管还包括夹在金属反射层和半导体层之间的缓冲层，其中缓冲层与金属和非金属透明材料混合，以减少半导体和金属之间的应力，以减少 模具开裂的可能性。

    Method for fabricating light emitting diode
    3.
    发明授权
    Method for fabricating light emitting diode 有权
    制造发光二极管的方法

    公开(公告)号：US08535958B2

    公开(公告)日：2013-09-17

    申请号：US13594859

    申请日：2012-08-26

    Applicant: Tzu-Chien Hung ,  Chia-Hui Shen ,  Chih-Pang Ma ,  Chih-Peng Hsu ,  Shih-Hsiung Chan

    Inventor： Tzu-Chien Hung ,  Chia-Hui Shen ,  Chih-Pang Ma ,  Chih-Peng Hsu ,  Shih-Hsiung Chan

    IPC: H01L21/00

    CPC classification number: H01L33/0079 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46

    Abstract: A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first semiconductor layer of the light emitting structure; depositing a plurality of dielectric material structures on the first semiconductor layer through a plurality of voids of the photoresist layer; removing the photoresist layer to form a plurality of voids between the plurality of dielectric material structures; forming a plurality of metal material structures in the plurality of voids; and forming a reflective layer on the plurality of dielectric material structures and the plurality of metal material structures.

    Abstract translation: 一种制造发光二极管的方法包括以下步骤：在衬底上形成发光二极管的发光结构; 在所述发光结构的第一半导体层上布置光致抗蚀剂层; 通过多个光致抗蚀剂层的空隙在第一半导体层上沉积多个介电材料结构; 去除所述光致抗蚀剂层以在所述多个介电材料结构之间形成多个空隙; 在所述多个空隙中形成多个金属材料结构; 以及在所述多个介电材料结构和所述多个金属材料结构上形成反射层。

    LED DIE HAVING HEAT DISSIPATION LAYERS
    4.
    发明申请
    LED DIE HAVING HEAT DISSIPATION LAYERS 失效
    LED散热片散热片

    公开(公告)号：US20110101408A1

    公开(公告)日：2011-05-05

    申请号：US12888398

    申请日：2010-09-22

    Applicant: TZU-CHIEN HUNG ,  CHIA-HUI SHEN ,  CHIH-PANG MA

    Inventor： TZU-CHIEN HUNG ,  CHIA-HUI SHEN ,  CHIH-PANG MA

    IPC: H01L33/64

    CPC classification number: H01L33/20 ,  H01L33/385 ,  H01L33/647 ,  H01L2224/48247 ,  H01L2224/8592

    Abstract: An LED die includes a multi-layer semiconductor with a first surface, a second surface opposite to the first surface, an inclined plane connecting to the first surface and the second surface, a first electrode and a second electrode respectively positioned on the first surface and the second surface, a first heat dissipation layer made of electrically-insulating and thermally conductive material being coated on the first surface and the inclined plane with a first opening exposing the first electrode, and a second heat dissipation layer made of electrically and thermally conductive material being coated on the first heat dissipation layer and contacting and electrically connecting with the first electrode.

    Abstract translation: LED管芯包括具有第一表面的多层半导体，与第一表面相对的第二表面，连接到第一表面和第二表面的倾斜平面，分别位于第一表面上的第一电极和第二电极， 所述第二表面，由绝缘导热材料制成的第一散热层涂覆在所述第一表面和所述倾斜平面上，具有暴露所述第一电极的第一开口和由导电和导热材料制成的第二散热层 被涂覆在第一散热层上并与第一电极接触并电连接。

    Semiconductor light-emitting device
    6.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US07683381B2

    公开(公告)日：2010-03-23

    申请号：US12031473

    申请日：2008-02-14

    Applicant: Chih Peng Hsu ,  Chih Pang Ma ,  Shih Hsiung Chan

    Inventor： Chih Peng Hsu ,  Chih Pang Ma ,  Shih Hsiung Chan

    IPC: H01L29/267

    CPC classification number: H01L33/405 ,  H01L33/387 ,  H01L33/46

    Abstract: A semiconductor light-emitting device comprises an N-type semiconductor layer, an active layer formed on the surface of the N-type semiconductor layer, a P-type semiconductor layer formed on the surface of the active layer, and a reflective layer formed on the surface of the P-type semiconductor layer. A plurality of ohmic contact blocks with electrical properties of ohmic contact are on the surface of the reflective layer adjacent to the P-type semiconductor layer, and the remaining part of the surface acts as the reflective regions with higher reflectivity, and the reflective regions can effectively reflect the light generated from the active layer.

    Abstract translation: 半导体发光器件包括N型半导体层，形成在N型半导体层的表面上的有源层，形成在有源层的表面上的P型半导体层和形成在有源层的表面上的反射层 P型半导体层的表面。 在与P型半导体层相邻的反射层的表面上，具有欧姆接触电特性的多个欧姆接触块，其余部分作为具有较高反射率的反射区域，反射区域 有效地反射从活性层产生的光。

    Single chip with multi-LED
    10.
    发明授权
    Single chip with multi-LED 有权
    单芯片带多路LED

    公开(公告)号：US07586129B2

    公开(公告)日：2009-09-08

    申请号：US11606937

    申请日：2006-12-01

    Applicant: Chih Peng Hsu ,  Chester Kuo ,  Chih Pang Ma

    Inventor： Chih Peng Hsu ,  Chester Kuo ,  Chih Pang Ma

    IPC: H01L29/207

    CPC classification number: H01L27/15 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A single chip with multi-LED comprises a substrate on which an N-type semiconductor layer, an active layer and a P-type semiconductor layer are successively stacked. At least one N-type electrode is connected to the N-type semiconductor layer, and is exposed to an opening through the active layer and the P-type semiconductor layer. Further, at least one groove divides the P-type semiconductor layer into a plurality of separated regions, and a P-type electrode is disposed on each separated region.

    Abstract translation: 具有多LED的单芯片包括依次层叠有N型半导体层，有源层和P型半导体层的基板。 至少一个N型电极连接到N型半导体层，并且通过有源层和P型半导体层暴露于开口。 此外，至少一个沟槽将P型半导体层划分成多个分离区域，并且在每个分离区域上设置P型电极。

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