Abstract:
A signal transmission system includes a first clock signal generator and a second clock signal generator. The first clock signal generator is configured for generating a first clock signal according to clock information derived from a transmitted signal, wherein the transmitted signal is changed in response to a frequency change of a second clock signal, and the first clock signal generator enters a frequency-unlocked state if the second clock signal has a frequency transition from a first frequency to a second frequency during a first time period. The second clock signal generator is configured for generating the second clock signal having the frequency transition from the first frequency to the second frequency during a second time period longer than the first time period such that the first clock signal generator stays in a frequency-locked state during the second time period.
Abstract:
A ceramic cutting tool (100) is for high speed cutting of light, thin and soft materials. The ceramic cutting tool includes an upper blade (10) and a lower blade (20) both made of ceramic material. The upper and lower blades therefore possess extremely high hardness, and excellent wear resistance and heat resistance. This increases an operating lifetime of the ceramic cutting tool. Furthermore, the lower blade can alternatively be a lower blade assembly (30). The lower blade assembly includes a metal base (32), and a ceramic edge insert (31) detachably mounted in the metal base. If the ceramic edge insert becomes worn or is damaged, it can be easily replaced by a new ceramic edge insert. There is no need to replace the metal base.
Abstract:
A frame layout and method for determining the overlay accuracy of a first chip image relative to a second chip image when the first and second chip images are used to form a single chip. One embodiment employs a vernier scale in two orthoginal directions included in the scribeline of both the first chip image and the second chip image. Another embodiment employs a box in box pattern included in the scribeline of both the first chip image and the second chip image. A layer of photoresist on an integrated circuit wafer is exposed with the first and second chip image and the associated monitor images. When the photoresist is developed the overlay accuracy of the first chip image relative to the second chip image can be determined directly from the monitor images in the photoresist.
Abstract:
A method and metal test pattern for monitoring metal corrosion susceptibility for integrated circuit wafers. Test patterns having an array of metal circles to simulate contact regions, an array of metal strips to simulate electrode regions, and a blanket metal layer to simulate bulk metal regions are formed. A first number of defects per unit area for the test patterns is measured, using a defect scan system. The test pattern wafers are then subjected to environmental stress conditions for a first time and a second number of defects per unit area for the test patterns is measured, again using a defect scan system. The difference between the second number and the first number is compared with a critical number. If excessive corrosion occurs the process for producing wafers is corrected before continuing to process product wafers.
Abstract:
A low cost, fast method for evaluating the effects of lens heating in a step and repeat projection system is disclosed. The first step is to form a series of photoresist images on a single substrate in the same way as would be done during normal stepping and repeating. The first few images, located centrally, will be produced by a cool lens. As more images are generated, the lens gradually heats up so that the final few images, which are placed alongside the `cool` images, will be produced by a hot lens. Critical dimension bars are present in all image fields (at diagonally opposite corners and in the center), their size in the developed photoresist being an indication of the extent to which the focal plane has drifted. This is then used to compute correction factors for the manufacturer's scaling constants and/or to evaluate the extent, if any, of curvature of field in the projected images.
Abstract:
This invention provides a method for removing metal etch residue of silicon nodules, resulting from a small percentage of silicon in the metal, without causing overetch damage to the photoresist pattern, the metal electrode pattern, or to dielectric layers. The metal conductor layer is partially etched leaving from 20 to 80 percent of the original thickness. Any residue of silicon nodules formed during this partial etching is then removed using ion bombardment. The remainder of the metal conductor layer is then etched. A short overetch period is used to remove any remaining residue of silicon nodules. The overetch period is short and there is no deterioration of the photoresist or exposed edges of the electrode pattern.
Abstract:
A termination circuit for a plurality of memories controlled by a controller is provided. The termination circuit includes a plurality of drivers, a plurality of resistors and a plurality of capacitors. Each of the drivers is coupled to the memories via a transmission line. Each of the resistors is coupled to the corresponding driver via the corresponding transmission line. Each of the capacitors is coupled between the corresponding resistor and a reference voltage. The controller is coupled to the memories via the drivers, and the controller provides a specific code to one of the drivers when a quantity of logic “0” and a quantity of logic “1” transmitted to the memories via the transmission line corresponding to the one of the drivers are unbalanced, so as to adjust a termination voltage of the capacitor corresponding to the one of the drivers.
Abstract:
A memory controller is provided. The memory controller is powered by first and second power source and includes an input/output pin, a driver circuit, a terminal resistor, and an input buffer. The driver circuit is coupled to the input/output pin and capable of providing to a writing signal to the input/output pin. The terminal resistor is coupled between the input/output pin and the first power source. The input buffer is coupled to the input/output pin and capable of receiving a reading signal from the input/output pin. No terminal resistor is coupled between the input/output pin and the second power source.
Abstract:
Semiconductor circuit capable of mitigating unwanted effects caused by variations in a received input signal are provided, in which a main circuit receives an input signal and comprises a first current source coupled between a first node and a first power voltage to generate a first current according to a first bias voltage. A replica circuit is coupled to the main circuit to duplicate a variation in a voltage at the first node caused by a variation in the input signal and dynamically adjusts the first bias voltage according to the duplicated variation such that the first current is maintained at a constant.
Abstract:
An environmentally friendly computer enclosure (20) includes a panel having a vent; and a photocatalyst device (1) mounted on the vent. The photocatalyst device includes an ultraviolet light source device (12), and a filter net (13) with a photocatalyst layer coated thereon. The photocatalyst layer preferably comprises titanium dioxide. The photocatalyst device is mounted on an outside of the vent. The ultraviolet light source device comprises at least one ultraviolet lamp tube or at least one ultraviolet light emitting diode. Soiled air output from the computer enclosure passes through the filter net that is coated with the photocatalyst layer of titanium dioxide. The soiled air is thus purified before being dissipated into the ambient environment.