公开(公告)号：US06468829B2

公开(公告)日：2002-10-22

申请号：US09850836

申请日：2001-05-08

申请人： Subhendu Guha ,  Chi C. Yang ,  Kenneth Lord

发明人： Subhendu Guha ,  Chi C. Yang ,  Kenneth Lord

IPC分类号： H01L2100

CPC分类号： H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A P-I-N type photovoltaic device is manufactured by a process wherein the deposition rate of the intrinsic layer is controlled so that a portion of the intrinsic layer which is closest to the P-I interface, and which comprises at least 10% of the thickness of the intrinsic layer, is deposited at a rate which is less than the average rate at which the entire intrinsic layer is deposited.

摘要翻译： PIN型光电器件通过以下方法制造，其中本征层的沉积速率被控制为使得本征层的最接近PI界面的部分，其包含本征层的厚度的至少10％ 以低于整个本征层沉积的平均速率的速率沉积。

公开(公告)号：US06274461B1

公开(公告)日：2001-08-14

申请号：US09377652

申请日：1999-08-19

申请人： Subhendu Guha ,  Chi C. Yang

发明人： Subhendu Guha ,  Chi C. Yang

IPC分类号： H01L2120

CPC分类号： C23C16/50 ,  C23C16/30 ,  C23C16/52 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.

摘要翻译： 基本上非晶半导体材料的等离子体沉积在选择的一组沉积参数下进行，使得该工艺在非晶/微晶阈值附近操作。 该阈值作为沉积半导体层的厚度的函数而变化; 并且必须将沉积参数（例如稀释气体浓度）调整为层厚度的函数。 此外，该阈值作为沉积层的组成的函数而变化，并且在层组成在整个厚度上成型的情况下，必须相应地调整沉积参数以保持非晶/微晶阈值。

公开(公告)号：US5977476A

公开(公告)日：1999-11-02

申请号：US731497

申请日：1996-10-16

申请人： Subhendu Guha ,  Chi C. Yang ,  Xi Xiang Xu

发明人： Subhendu Guha ,  Chi C. Yang ,  Xi Xiang Xu

IPC分类号： H01L31/0368 ,  H01L31/075 ,  H01L25/00

CPC分类号： H01L31/076 ,  H01L31/03685 ,  H01L31/075 ,  Y02E10/545 ,  Y02E10/548

摘要： An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

摘要翻译： NIP型光伏器件包括N掺杂半导体材料的多层体，其具有与本征半导体材料的非晶体体接触的非晶态N掺杂层，以及覆盖非晶N掺杂材料的微晶N掺杂层 。 包括堆叠的N-I-P单元的串联装置还可以包括介于微晶N掺杂层和微晶P掺杂层之间的第二非晶N掺杂层。 如此配置的光伏设备显示出改善的性能，特别是当配置为串联设备时。

公开(公告)号：US5346853A

公开(公告)日：1994-09-13

申请号：US185309

申请日：1994-01-21

申请人： Subhendu Guha ,  Chi C. Yang ,  XiXiang Xu

发明人： Subhendu Guha ,  Chi C. Yang ,  XiXiang Xu

IPC分类号： H01L21/205 ,  H01L31/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/326

CPC分类号： H01L31/204 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： Substrate temperatures are maintained above 400.degree. C. During the microwave energized glow discharge deposition of Group IV semiconductor materials. The substrate temperature range provides for the preparation of materials having improved electrical properties. Cell efficiency of a photovoltaic device of the p-i-n type is significantly improved by depositing the intrinsic layer using a microwave generated plasma and a substrate temperature in excess of 400.degree. C. Maximum cell efficiency occurs for depositions carried out in the range of 400.degree.-500.degree. C.

摘要翻译： 衬底温度保持在400℃以上。在第IV组半导体材料的微波激发辉光放电沉积期间。 衬底温度范围提供具有改善的电性能的材料的制备。 通过使用微波产生的等离子体沉积本征层并且衬底温度超过400℃，可以显着提高引脚类型的光电器件的电池效率。对于在400°-500范围内进行的沉积，发生最大电池效率 DEG C.

公开(公告)号：US5231048A

公开(公告)日：1993-07-27

申请号：US811608

申请日：1991-12-23

申请人： Subhendu Guha ,  Arindam Banerjee ,  Chi C. Yang ,  XiXiang Xu

发明人： Subhendu Guha ,  Arindam Banerjee ,  Chi C. Yang ,  XiXiang Xu

IPC分类号： H01L21/205 ,  H01L21/203

CPC分类号： H01L21/02532 ,  H01L21/0262

摘要： The glow discharge deposition of thin film materials is most advantageously carried out at a pressure which is less than the pressure of the minimum point on the deposition system's Paschen curve and at a power which is in excess of the minimum power required to sustain a deposition plasma at the particular process pressure.

摘要翻译： 薄膜材料的辉光放电沉积最有利地在低于沉积系统的帕邢曲线上的最小点的压力和超过维持沉积等离子体所需的最小功率的功率的压力下进行 在特定的工艺压力下。

公开(公告)号：US5569332A

公开(公告)日：1996-10-29

申请号：US511887

申请日：1995-08-07

申请人： Troy Glatfelter ,  Kevin Hoffman ,  Chi C. Yang ,  Subhendu Guha

发明人： Troy Glatfelter ,  Kevin Hoffman ,  Chi C. Yang ,  Subhendu Guha

IPC分类号： H01L31/052 ,  H01L31/076 ,  H01L31/06 ,  H01L31/075

CPC分类号： H01L31/076 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/548

摘要： An optically enhanced back reflector for a photovoltaic device includes a back reflector layer of aluminum having a multi-layered, reflectivity enhancement member deposed thereon. The multi-layer enhancement member includes at least one pair of first and second layers, the first layer having a low index of refraction and the second layer having a high index of refraction. A layer of transmissive conductive oxide is disposed between the optically enhanced back reflector and the photovoltaic device.

摘要翻译： 用于光伏器件的光学增强后反射器包括铝的后反射器层，其具有放置在其上的多层反射增强部件。 多层增强构件包括至少一对第一层和第二层，第一层具有低折射率，第二层具有高折射率。 透光导电氧化物层设置在光学增强后反射器和光电器件之间。

公开(公告)号：US5204272A

公开(公告)日：1993-04-20

申请号：US808209

申请日：1991-12-13

申请人： Subhendu Guha ,  Arindam Banerjee ,  Chi C. Yang

发明人： Subhendu Guha ,  Arindam Banerjee ,  Chi C. Yang

IPC分类号： C23C16/511 ,  H01J37/32 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32697 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  H01J2237/332 ,  Y02E10/548 ,  Y02P70/521

摘要： Open circuit voltage of photovoltaic devices manufactured by a microwave deposition process is increased by disposing a bias wire in the microwave energized plasma and applying a positive voltage of approximately 100 volts to the wire during only a portion of the time in which the intrinsic semiconductor layer is being deposited.

摘要翻译： 通过在微波激发的等离子体中设置偏置线并且在仅本征半导体层的时间的一部分时间内将约100伏的正电压施加到线来增加通过微波沉积工艺制造的光伏器件的开路电压 存放

公开(公告)号：US4379943A

公开(公告)日：1983-04-12

申请号：US330571

申请日：1981-12-14

申请人： Chi C. Yang ,  Arun Madan ,  Stanford R. Ovshinsky ,  David Adler

发明人： Chi C. Yang ,  Arun Madan ,  Stanford R. Ovshinsky ,  David Adler

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： The disclosure is directed to photovoltaic devices having enhanced short circuit currents and efficiencies. The devices are made by depositing on a previously deposited doped amorphous semiconductor alloy layer a body of intrinsic amorphous semiconductor alloys including a first intrinsic layer, adjacent the doped layer, formed from the deposition of a non-etching starting material and a second intrinsic layer different in composition from the first intrinsic layer. The second intrinsic layer preferably includes silicon and fluorine while the first intrinsic amorphous alloy layer does not include fluorine. The first intrinsic layer may be formed by the glow discharge decomposition of silane gas alone. The thicknesses of the first and second intrinsic layers are adjusted so as to match the respective potential drops thereof with the first intrinsic layer being relatively thin as compared to the second intrinsic layer.

摘要翻译： 本公开涉及具有增强的短路电流和效率的光伏器件。 这些器件通过在先前沉积的掺杂非晶半导体合金层上沉积本体非晶半导体合金制成，该本体非晶半导体合金包括由非蚀刻起始材料的沉积和不同的第二本征层形成的与掺杂层相邻的第一本征层 在第一本征层的组成中。 第二本征层优选包括硅和氟，而第一本征非晶合金层不包括氟。 第一本征层可以由单独的硅烷气体的辉光放电分解形成。 第一本征层和第二本征层的厚度被调整以使其相应的电位滴与第二本征层相比第一本征层相对较薄。

公开(公告)号：US5334423A

公开(公告)日：1994-08-02

申请号：US10074

申请日：1993-01-28

申请人： Subhendu Guha ,  Chi C. Yang ,  XiXiang Xu

发明人： Subhendu Guha ,  Chi C. Yang ,  XiXiang Xu

IPC分类号： B05D5/12 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01J37/32357 ,  C23C16/511 ,  H01J37/32697

摘要： High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.

摘要翻译： 高质量的半导体材料沉积在微波通电的辉光放电沉积工艺中，通过以足以在100％饱和模式下或接近100％饱和模式产生等离子体的功率水平通过微波能量激励处理气体并通过阻止沉积物质进入衬底而进行 以便将沉积速率降低到小于在100％饱和模式下操作的值。

公开(公告)号：US5296045A

公开(公告)日：1994-03-22

申请号：US941157

申请日：1992-09-04

申请人： Arindam Banerjee ,  Chi C. Yang ,  Subhendu Guha

发明人： Arindam Banerjee ,  Chi C. Yang ,  Subhendu Guha

IPC分类号： H01L31/0236 ,  H01L31/052 ,  H01L31/076 ,  H01L31/06 ,  H01L31/075

CPC分类号： H01L31/076 ,  H01L31/0236 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/548

摘要： A back reflector for a photovoltaic device includes an electrically conductive, textured layer and a reflective layer conformally disposed on the textured layer. The reflector may include a protective layer atop the reflective layer. The materials of the reflector are selected to be non-reactive under conditions encountered in the manufacture and use of the photovoltaic device.

摘要翻译： 用于光伏器件的后反射器包括导电的纹理层和保形地设置在纹理层上的反射层。 反射器可以包括在反射层顶上的保护层。 反射器的材料在光伏器件的制造和使用中遇到的条件下选择为不反应的。