-
公开(公告)号:US20070086931A1
公开(公告)日:2007-04-19
申请号:US11452188
申请日:2006-06-13
申请人: Sebastien Raoux , Brian Kingston , Mark Curry , Daniel Clark , Robbert Vermeulen , Belynda Flippo , Mark Holst , Steve Tsu , Kevin Lin , Monique Mcintosh
发明人: Sebastien Raoux , Brian Kingston , Mark Curry , Daniel Clark , Robbert Vermeulen , Belynda Flippo , Mark Holst , Steve Tsu , Kevin Lin , Monique Mcintosh
CPC分类号: B01D53/78 , B01D53/68 , B01D53/70 , B01D53/75 , B01D53/8659 , B01D53/8662 , B01D53/8678 , B01D2257/204 , B01D2257/206 , B01D2257/2064 , B01D2257/2066 , B01D2257/708 , B01D2258/0216 , Y02C20/30
摘要: In a first aspect, a first abatement apparatus is provided. The first abatement apparatus includes (1) an oxidation unit adapted to receive an effluent stream from a semiconductor device manufacturing chamber; (2) a first water scrubber unit adapted to receive the effluent stream from the oxidation unit; and (3) a catalysis unit adapted to receive the effluent stream from the first water scrubber unit. Numerous other aspects are provided.
摘要翻译: 在第一方面,提供了一种第一减排装置。 第一减排装置包括(1)氧化单元,适于从半导体装置制造室接收流出物流; (2)适于接收来自氧化单元的流出物流的第一水洗涤单元; 和(3)适于接收来自第一水洗涤器单元的流出物流的催化单元。 提供了许多其他方面。