公开(公告)号：US08647972B1

公开(公告)日：2014-02-11

申请号：US13618255

申请日：2012-09-14

Applicant: Takashi Ando ,  Aritra Dasgupta ,  Unoh Kwon ,  Sean M. Polvino

Inventor： Takashi Ando ,  Aritra Dasgupta ,  Unoh Kwon ,  Sean M. Polvino

IPC: H01L21/3205 ,  H01L21/4763

CPC classification number: H01L29/66545 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795

Abstract: Embodiments relate to a field-effect transistor (FET) replacement gate apparatus. The apparatus includes one or more of a substrate and insulator including a base and side walls defining a trench. A high-dielectric constant (high-k) layer is formed on the base and side walls of the trench. The high-k layer has an upper surface conforming to a shape of the trench. A first layer is formed on the high-k layer and conforms to the shape of the trench. The first layer includes an aluminum-free metal nitride. A second layer is formed on the first layer and conforms to the shape of the trench. The second layer includes aluminum and at least one other metal. A third layer is formed on the second layer and conforms to the shape of the trench. The third layer includes aluminum-free metal nitride.

Abstract translation: 实施例涉及场效应晶体管（FET）替换门装置。 该装置包括一个或多个衬底和绝缘体，其包括限定沟槽的基底和侧壁。 在沟槽的底壁和侧壁上形成高介电常数（高k）层。 高k层具有与沟槽形状一致的上表面。 第一层形成在高k层上并符合沟槽的形状。 第一层包括无铝的金属氮化物。 在第一层上形成第二层并符合沟槽的形状。 第二层包括铝和至少一种其他金属。 第三层形成在第二层上并符合沟槽的形状。 第三层包括无铝金属氮化物。

公开(公告)号：US20140070307A1

公开(公告)日：2014-03-13

申请号：US13615343

申请日：2012-09-13

Applicant: Takashi Ando ,  Aritra Dasgupta ,  Unoh Kwon ,  Sean M. Polvino

Inventor： Takashi Ando ,  Aritra Dasgupta ,  Unoh Kwon ,  Sean M. Polvino

IPC: H01L29/78

CPC classification number: H01L29/66545 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795

Abstract: Embodiments relate to a field-effect transistor (FET) replacement gate apparatus. The apparatus includes a channel structure including a base and side walls defining a trench. A high-dielectric constant (high-k) layer is formed on the base and side walls of the trench. The high-k layer has an upper surface conforming to a shape of the trench. A first layer is formed on the high-k layer and conforms to the shape of the trench. The first layer includes an aluminum-free metal nitride. A second layer is formed on the first layer and conforms to the shape of the trench. The second layer includes aluminum and at least one other metal. A third layer is formed on the second layer and conforms to the shape of the trench. The third layer includes aluminum-free metal nitride.

Abstract translation: 实施例涉及场效应晶体管（FET）替换门装置。 该装置包括一个通道结构，该通道结构包括限定沟槽的底座和侧壁。 在沟槽的底壁和侧壁上形成高介电常数（高k）层。 高k层具有与沟槽形状一致的上表面。 第一层形成在高k层上并符合沟槽的形状。 第一层包括无铝的金属氮化物。 在第一层上形成第二层并符合沟槽的形状。 第二层包括铝和至少一种其它金属。 第三层形成在第二层上并符合沟槽的形状。 第三层包括无铝金属氮化物。

公开(公告)号：US08659077B1

公开(公告)日：2014-02-25

申请号：US13615343

申请日：2012-09-13

Applicant: Takashi Ando ,  Aritra Dasgupta ,  Unoh Kwon ,  Sean M. Polvino

Inventor： Takashi Ando ,  Aritra Dasgupta ,  Unoh Kwon ,  Sean M. Polvino

IPC: H01L29/66

CPC classification number: H01L29/66545 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795

Abstract: Embodiments relate to a field-effect transistor (FET) replacement gate apparatus. The apparatus includes a channel structure including a base and side walls defining a trench. A high-dielectric constant (high-k) layer is formed on the base and side walls of the trench. The high-k layer has an upper surface conforming to a shape of the trench. A first layer is formed on the high-k layer and conforms to the shape of the trench. The first layer includes an aluminum-free metal nitride. A second layer is formed on the first layer and conforms to the shape of the trench. The second layer includes aluminum and at least one other metal. A third layer is formed on the second layer and conforms to the shape of the trench. The third layer includes aluminum-free metal nitride.

Abstract translation: 实施例涉及场效应晶体管（FET）替换门装置。 该装置包括一个通道结构，该通道结构包括限定沟槽的底座和侧壁。 在沟槽的底壁和侧壁上形成高介电常数（高k）层。 高k层具有与沟槽形状一致的上表面。 第一层形成在高k层上并符合沟槽的形状。 第一层包括无铝的金属氮化物。 在第一层上形成第二层并符合沟槽的形状。 第二层包括铝和至少一种其他金属。 第三层形成在第二层上并符合沟槽的形状。 第三层包括无铝金属氮化物。