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公开(公告)号：US09704235B2
公开(公告)日：2017-07-11
申请号：US14234977
申请日：2012-07-20
申请人： Akiyuki Sugiyama , Yuichi Abe
发明人： Akiyuki Sugiyama , Yuichi Abe
CPC分类号： G06T7/001 , G01B15/08 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： When the lengths of FEM wafers are automatically measured, not only the sizes of targets, the lengths of which are to be measured, are often varied from those in registration, but also the patterns of the targets are often deformed. Therefore, it is difficult to automatically determine whether the length measurement is possible or not. Therefore, the following are executed with a semiconductor inspection system: (1) a process of identifying the position of the contour line of an inspected image using a distance image calculated from a reference image, (2) a process of calculating a defect size image based on the position of the contour line with respect to the identified distance image, and detecting a defect candidate from the defect size image, and (3-1) a process of, upon detection of the defect candidate, calculating the size of the detected defect candidate, or (3-2) a process of detecting a portion different between the first and second contour lines as the defect candidate.
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公开(公告)号：US08355562B2
公开(公告)日：2013-01-15
申请号：US12192317
申请日：2008-08-15
IPC分类号： G06K9/00
CPC分类号： G06F17/5081 , G06K9/00 , G06K2209/19 , G06T7/0004
摘要： A pattern shape evaluation method and semiconductor inspection system having a unit for extracting contour data of a pattern from an image obtained by photographing a semiconductor pattern, a unit for generating pattern direction data from design data of the semiconductor pattern, and a unit for detecting a defect of a pattern, through comparison between pattern direction data obtained from the contour data and pattern direction data generated from the design data corresponding to a pattern position of the contour data.
摘要翻译： 一种图案形状评估方法和半导体检查系统，具有从通过拍摄半导体图案获得的图像中提取图案的轮廓数据的单元，用于从半导体图案的设计数据生成图案方向数据的单元和用于检测半导体图案的单元 通过比较从轮廓数据获得的图案方向数据和从对应于轮廓数据的图案位置的设计数据生成的图案方向数据，来对图案的缺陷进行比较。
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3.发明授权公开(公告)号：US08094920B2
公开(公告)日：2012-01-10
申请号：US11520800
申请日：2006-09-14
申请人： Akiyuki Sugiyama , Hiroyuki Shindo
发明人： Akiyuki Sugiyama , Hiroyuki Shindo
CPC分类号： G06T7/001 , G06K9/6203 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817
摘要： A scanning electron microscope comprises an image processing system for carrying out a pattern matching between a first image and a second image. The image processing system comprises: a paint-divided image generator for generating a paint divided image based on the first image; a gravity point distribution image generator for carrying out a smoothing process of the paint divided image and generating a gravity point distribution image; an edge line segment group generation unit for generating a group of edge line segments based on the second image; a matching score calculation unit for calculating a matching score based on the gravity point distribution image and the group of edge line segments; and a maximum score position detection unit for detecting a position where the matching score becomes the maximum.
摘要翻译： 扫描电子显微镜包括用于执行第一图像和第二图像之间的图案匹配的图像处理系统。 图像处理系统包括：油漆分割图像生成器，用于基于第一图像生成油漆分割图像; 重力点分布图像发生器，用于执行油漆分割图像的平滑处理并产生重力点分布图像; 边缘线段组生成单元，用于基于第二图像生成一组边缘线段; 匹配分数计算单元，用于基于重力点分布图像和边缘线段组来计算匹配分数; 以及最大得分位置检测单元，用于检测匹配得分变为最大值的位置。
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公开(公告)号：US08019161B2
公开(公告)日：2011-09-13
申请号：US11717772
申请日：2007-03-14
IPC分类号： G06K9/46
CPC分类号： G01N23/2251
摘要： A workpiece size measurement method suitable for length measurement of multilayered circuit elements with increased complexities is disclosed. This method employs a technique for changing measurement conditions in a way pursuant to either an image of workpiece or the situation of a target semiconductor circuit element to be measured when measuring pattern sizes on the workpiece image using design data of the semiconductor circuit element. With such an arrangement, adequate measurement conditions are selectable in accordance with the state of workpiece image and/or the state of a circuit element formed on the workpiece, thereby making it possible to improve the measurement efficiency. A workpiece size measurement apparatus using the technique is also disclosed.
摘要翻译： 公开了一种适合于具有增加的复杂度的多层电路元件的长度测量的工件尺寸测量方法。 该方法采用在使用半导体电路元件的设计数据测量工件图像上的图案尺寸时，根据工件的图像或待测量的目标半导体电路元件的情况来改变测量条件的技术。 通过这样的布置，可以根据工件图像的状态和/或形成在工件上的电路元件的状态来选择适当的测量条件，从而可以提高测量效率。 还公开了使用该技术的工件尺寸测量装置。
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5.发明申请SAMPLE DIMENSION INSPECTING/MEASURING METHOD AND SAMPLE DIMENSION INSPECTING/MEASURING APPARATUS 有权样本尺寸检查/测量方法和样品尺寸检查/测量装置公开(公告)号：US20110158543A1
公开(公告)日：2011-06-30
申请号：US13041894
申请日：2011-03-07
IPC分类号： G06K9/00
CPC分类号： G01B15/04 , G03F1/86 , G06T7/001 , G06T7/13 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/24592 , H01J2237/2817
摘要： One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.
摘要翻译： 本发明的主要目的之一是提供一种用于以与边缘的方向无关的方式以相同的精度恒定地检测二维图案的边缘的位置的样本尺寸测量方法和样本尺寸测量装置。 根据本发明，为了实现上述目的，提出了相对于检查对象图案的图案边缘的方向取决于电子束的扫描方向的二次电子的信号波形的变化。 建议当根据要测量的图案的方向改变电子束的扫描方向时，校正扫描方向和扫描位置的误差。 在该结构中，与电子束的扫描方向无关，可以获得足够的边缘检测精度。
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公开(公告)号：US07518110B2
公开(公告)日：2009-04-14
申请号：US11359374
申请日：2006-02-23
IPC分类号： G01B9/00
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/2817
摘要： A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point.
摘要翻译： 提供了一种图案测量方法和装置，其基于通过扫描电子显微镜等测量的测量点的基准位置，基于从扫描电子显微镜获取的图像上的参考图案的位置信息，并基于 通过使用设计数据检测的位置关系，在测量点和形成在与测量点隔离的位置处形成的参考图案之间。
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公开(公告)号：US20080224035A1
公开(公告)日：2008-09-18
申请号：US11892675
申请日：2007-08-24
CPC分类号： G06T7/001 , G06T7/33 , G06T2207/10056 , G06T2207/30148
摘要： An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.
摘要翻译： 提供了一种评估方法和装置，用于通过使用表示叠加的多个图案的设计数据来理想地评估图案图案的图案之间的位移。 对于设计数据的线段和带电粒子辐射图像的边缘之间的上层图案测量第一距离，测量设计数据的线段与设计数据的边缘之间的较低层图案的第二距离 带电粒子辐射图像; 并且根据第一距离和第二距离在上层图案和下层图案之间检测叠加位移。
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公开(公告)号：US20050232493A1
公开(公告)日：2005-10-20
申请号：US11104632
申请日：2005-04-13
申请人： Norio Satou , Akiyuki Sugiyama , Osamu Komuro , Satoru Yamaguchi
发明人： Norio Satou , Akiyuki Sugiyama , Osamu Komuro , Satoru Yamaguchi
CPC分类号： G06T7/001
摘要： According to the pattern search method of the present invention, detection of a detection image region relative to an observation image is performed by a pattern matching. An image whose size is substantially the same as that of the observation image is used as the detection image region. The detection image region is relatively displaced with reference to the observation image, thereby detecting a degree of similarity for a common region which is common to both of the region and the image. Displacement range of the detection image region is set in advance. If area of the common region is larger than a predetermined value, calculating the degree of similarity will be performed.
摘要翻译： 根据本发明的图案搜索方法，通过图案匹配来执行相对于观察图像的检测图像区域的检测。 使用与观察图像基本相同的图像作为检测图像区域。 检测图像区域相对于观察图像相对移位，从而检测对于区域和图像两者共同的公共区域的相似度。 预先设定检测图像区域的位移范围。 如果公共区域的面积大于预定值，则将执行相似度的计算。
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公开(公告)号：US20140219545A1
公开(公告)日：2014-08-07
申请号：US14234977
申请日：2012-07-20
申请人： Akiyuki Sugiyama , Yuichi Abe
发明人： Akiyuki Sugiyama , Yuichi Abe
IPC分类号： G06T7/00
CPC分类号： G06T7/001 , G01B15/08 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： When the lengths of FEM wafers are automatically measured, not only the sizes of targets, the lengths of which are to be measured, are often varied from those in registration, but also the patterns of the targets are often deformed. Therefore, it is difficult to automatically determine whether the length measurement is possible or not. Therefore, the following are executed with a semiconductor inspection system: (1) a process of identifying the position of the contour line of an inspected image using a distance image calculated from a reference image, (2) a process of calculating a defect size image based on the position of the contour line with respect to the identified distance image, and detecting a defect candidate from the defect size image, and (3-1) a process of, upon detection of the defect candidate, calculating the size of the detected defect candidate, or (3-2) a process of detecting a portion different between the first and second contour lines as the defect candidate.
摘要翻译： 当自动测量有限元晶片的长度时，不仅要测量其长度的目标的尺寸通常与注册的尺寸不同，而且目标的图案也经常变形。 因此，难以自动确定长度测量是否可行。 因此，使用半导体检查系统执行以下操作：（1）使用从参考图像计算的距离图像来识别被检查图像的轮廓线的位置的处理，（2）计算缺陷尺寸图像的处理 基于所述轮廓线相对于所识别的距离图像的位置，以及从所述缺陷尺寸图像检测缺陷候选，以及（3-1）在检测到所述缺陷候选时，计算所检测到的所述缺陷候选的大小的处理 缺陷候选者，或（3-2）检测第一和第二轮廓线之间的部分的缺陷候选的处理。
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公开(公告)号：US08788242B2
公开(公告)日：2014-07-22
申请号：US13202504
申请日：2010-02-03
IPC分类号： G01B15/00 , G06F15/00 , G03F7/20 , G03F1/20 , H01J37/317
CPC分类号： G03F7/70625 , B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/70633 , H01J37/3174 , H01J2237/1536 , H01J2237/226 , H01J2237/24571 , H01J2237/2809
摘要： It is the object of the present invention to provide a pattern measurement apparatus which suitably evaluates a pattern formed by a double patterning method prior to a transfer using masks or which suitably evaluates a deviation of patterns formed by the double patterning method. To achieve the object, a pattern measurement apparatus is proposed which performs an exposure simulation on data about contour lines obtained by converting the pattern edges of first and mask images formed based on charged-particle beam irradiation of the two masks used for subsequent double exposure and which overlaps two exposure-simulated contour lines based on the coordinate information of design data about the masks. Furthermore, a pattern dimension measuring apparatus is proposed which sets measurement conditions using a charged-particle beam based on the positional information about parts or portions separated for double exposure.
摘要翻译： 本发明的目的是提供一种图案测量装置，其适当地评估在使用掩模的转印之前通过双重图案化方法形成的图案，或适当地评估通过双重图案形成方法形成的图案的偏差。 为了实现该目的，提出了一种图案测量装置，其对通过转换基于用于后续双曝光的两个掩模的带电粒子束照射形成的第一和掩模图像的图案边缘而获得的关于轮廓线的数据进行曝光模拟， 其基于关于掩模的设计数据的坐标信息与两个曝光模拟轮廓线重叠。 此外，提出了一种图案尺寸测量装置，其基于关于双重曝光分开的部分的位置信息，使用带电粒子束来设定测量条件。
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