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公开(公告)号：US10386310B2
公开(公告)日：2019-08-20
申请号：US15507545
申请日：2015-08-28
摘要： A system and method of non-contact measurement of the dopant content of semiconductor material by reflecting infrared (IR) radiation off of the material into an integrating sphere to scatter the received radiation and passing portions of the radiation through band pass filters of differing wavelength ranges, comparing the level of energy passed through each filter and calculating the dopant content by referencing a correlation curve made up of known wafer dopant content for that system.
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公开(公告)号：US20220412896A1
公开(公告)日：2022-12-29
申请号：US17781020
申请日：2020-12-04
IPC分类号： G01N21/95 , G01N21/59 , G01N21/3563
摘要： Systems and methods for non-contact characterization of semiconductor devices. Systems may include: an infrared radiation source directing radiation towards the semiconductor device; a radiation directing device positioned proximal the infrared radiation source to direct radiation towards an opposing side of the semiconductor device, the semiconductor device receivable between the radiation directing device and the infrared radiation source; and a radiation detector proximal to the infrared radiation source to sense radiation associated with a plurality of infrared wavebands from the semiconductor device for determining a dopant profile property of the semiconductor device. The sensed radiation may include radiation originating from the infrared radiation source reflected from the semiconductor device. The sensed radiation may include radiation originating from the radiation directing device and emerging from the semiconductor device. The dopant profile properties may be based on infrared reflectance or infrared transmittance associated with the plurality of respective infrared wavebands.
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公开(公告)号：US10559709B2
公开(公告)日：2020-02-11
申请号：US15520831
申请日：2015-10-20
发明人： Gregory Ayres , Steven McDonald
摘要： The present invention provides methods and systems for manufacturing process control of photovoltaic products. Some embodiments relate to a method for tracking wafers for photovoltaic products with respect to which production tool processed them and their position within that production tool. Some embodiments relate to measuring and characterizing the critical-to-quality parameters of the partially-finished photovoltaic products emerging from the production tool in question. Some embodiments relate to display and visualization of the measured parameters on a computer screen, such that the parameters of each production unit can be directly observed in the context of which production tools processed them, which location within a specific production tool they were located in during processing, and which batch, or in the case of continuous processing, what time, the unit(s) was/where processed.
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公开(公告)号：US12085516B2
公开(公告)日：2024-09-10
申请号：US17781020
申请日：2020-12-04
IPC分类号： G01N21/95 , G01N21/35 , G01N21/3563 , G01N21/59
CPC分类号： G01N21/9501 , G01N21/3563 , G01N21/59 , G01N2021/3568 , G01N2021/3595
摘要： Systems and methods for non-contact characterization of semiconductor devices. Systems may include: an infrared radiation source directing radiation towards the semiconductor device; a radiation directing device positioned proximal the infrared radiation source to direct radiation towards an opposing side of the semiconductor device, the semiconductor device receivable between the radiation directing device and the infrared radiation source; and a radiation detector proximal to the infrared radiation source to sense radiation associated with a plurality of infrared wavebands from the semiconductor device for determining a dopant profile property of the semiconductor device. The sensed radiation may include radiation originating from the infrared radiation source reflected from the semiconductor device. The sensed radiation may include radiation originating from the radiation directing device and emerging from the semiconductor device. The dopant profile properties may be based on infrared reflectance or infrared transmittance associated with the plurality of respective infrared wavebands.
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5.发明申请公开(公告)号：US20180108579A1
公开(公告)日：2018-04-19
申请号：US15737235
申请日：2016-06-17
发明人： Gordon Matthew DEANS
IPC分类号： H01L21/66 , H02S50/10 , H01L31/068 , H01L31/18
CPC分类号： H01L22/14 , H01L22/34 , H01L31/068 , H01L31/1804 , H02S50/10 , Y02E10/547 , Y02P70/521
摘要： A method and apparatus for estimating an effect of variations of wafer properties on operating parameters of photovoltaic cells during manufacturing is provided. Measurements of emitter sheet resistance, minority carrier lifetime, and wafer resistivity of a wafer are obtained during manufacture of the wafer into a photovoltaic cell. Measurements may be made in-line with manufacturing. Current and voltage (I-V) parameters of the photovoltaic cell, such as VOC, ISC and fill factor are estimated based on some the obtained measurements. Calculation routines for the I-V parameters may be monitored for accuracy and updated based on actual observed values of the I-V parameters as measured in the finished photovoltaic cells. The update may be based on a comparison between observed wafer properties and imputed wafer properties that are generated based on the observed values of the I-V parameters. The measurements and I-V parameters may be used to identify process faults.
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6.发明申请公开(公告)号：US20180006185A1
公开(公告)日：2018-01-04
申请号：US15520831
申请日：2015-10-20
发明人： Gregory AYRES , Steven MCDONALD
摘要： The present invention provides methods and systems for manufacturing process control of photovoltaic products. Some embodiments relate to a method for tracking wafers for photovoltaic products with respect to which production tool processed them and their position within that production tool. Some embodiments relate to measuring and characterizing the critical-to-quality parameters of the partially-finished photovoltaic products emerging from the production tool in question. Some embodiments relate to display and visualization of the measured parameters on a computer screen, such that the parameters of each production unit can be directly observed in the context of which production tools processed them, which location within a specific production tool they were located in during processing, and which batch, or in the case of continuous processing, what time, the unit(s) was/where processed.
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公开(公告)号：US20170248528A1
公开(公告)日：2017-08-31
申请号：US15507545
申请日：2015-08-28
CPC分类号： G01N21/9501 , G01J3/0254 , G01J3/433 , G01N21/3563 , G01N21/55 , G01N21/9505 , G01N2021/3568 , G01N2201/06113 , G01N2201/062 , G01N2201/065 , H01L22/12 , H01L31/18
摘要： A system and method of non-contact measurement of the dopant content of semiconductor material by reflecting infrared (IR) radiation off of the material into an integrating sphere to scatter the received radiation and passing portions of the radiation through band pass filters of differing wavelength ranges, comparing the level of energy passed through each filter and calculating the dopant content by referencing a correlation curve made up of known wafer dopant content for that system.
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