公开(公告)号：US12133237B2

公开(公告)日：2024-10-29

申请号：US17991100

申请日：2022-11-21

申请人： Futurewei Technologies, Inc.

发明人： Jinhuan Xia ,  Brian Classon ,  Vipul Desai

IPC分类号： H04W88/02 ,  H04W72/12 ,  H04W72/1273 ,  H04W72/23 ,  H04W72/0446

CPC分类号： H04W72/23 ,  H04W72/12 ,  H04W72/1273 ,  H04W72/0446 ,  H04W88/02

摘要： A method includes determining a first subframe on which to transmit a first downlink control information (DCI) message and determining a second subframe on which to transmit a first information. The method also includes determining a delay between the first subframe and the second subframe and transmitting, by a communications controller to a user equipment (UE), the second subframe in accordance with the delay.

公开(公告)号：US12132823B2

公开(公告)日：2024-10-29

申请号：US17706877

申请日：2022-03-29

申请人： Huawei Technologies Co., Ltd.

发明人： Bo Zhang

IPC分类号： H04L9/08 ,  H04L9/32

CPC分类号： H04L9/0825 ,  H04L9/0866 ,  H04L9/0869 ,  H04L9/3213

摘要： A communication authentication method and a related device, the method including sending, by a user terminal, a generic bootstrapping architecture (GBA) authentication request carrying a user terminal identifier, receiving, by the user terminal, an authentication request carrying an authentication token (AUTN) and a random number (RAND), and deriving, by the user terminal, a first authentication vector based on the AUTN and the RAND, where the first authentication vector is different from a second authentication vector of the user terminal, the first authentication vector is a 5th generation (5G) GBA authentication vector, and the second authentication vector includes at least one of a 3rd generation/4th generation (3G/4G) GBA authentication vector or a 5G authentication vector.

公开(公告)号：US12132495B2

公开(公告)日：2024-10-29

申请号：US18069459

申请日：2022-12-21

申请人： STMicroelectronics France ,  STMicroelectronics (Grenoble 2) SAS

发明人： Julien Goulier ,  Franck Montaudon

IPC分类号： H03M1/12 ,  H04B5/72 ,  G06K19/077 ,  H04B5/00

CPC分类号： H03M1/124 ,  H04B5/72 ,  G06K19/07773 ,  H04B5/00

摘要： The present disclosure concerns an electronic device connected to an antenna. The electronic device delivers a first amplitude-modulated analog signal of a signal captured by the antenna, the capture signal associated with an electromagnetic field exhibiting intervals at a minimum level. The electronic device includes a first circuit, a second circuit, and a third circuit. The first circuit delivers a second analog signal by rectification and filters the first analog signal. The second circuit delivers a first binary signal based on the demodulation of the second analog signal. The third circuit couples the antenna to a resistor during each pause. The resistance value of the resistor depends on the maximum amplitude of the electromagnetic field before the pause.

公开(公告)号：US12132233B2

公开(公告)日：2024-10-29

申请号：US17079008

申请日：2020-10-23

申请人： Hyundai Motor Company ,  Kia Motors Corporation

发明人： In Woo Jang

IPC分类号： H01M8/0258 ,  H01M8/0202 ,  H01M8/0245 ,  H01M8/1004

CPC分类号： H01M8/0258 ,  H01M8/0202 ,  H01M8/0245 ,  H01M8/1004 ,  H01M2250/20

摘要： A fuel cell includes a membrane electrode assembly including a membrane, a cathode, and an anode, a first gas diffusion layer stacked on an outer surface of the cathode, a second gas diffusion layer stacked on an outer surface of the anode, a separator stacked on an outer surface of the first gas diffusion layer, and a reaction gas channel provided in the separator, wherein the reaction gas channel includes an inlet region, an outlet region, and a central region provided between the inlet region and the outlet region with respect to a flow direction of a reaction gas flowing through the reaction gas channel, wherein an electric resistance of the separator in the inlet region or the outlet region is greater than an electric resistance of the separator in the central region.

公开(公告)号：US12132092B2

公开(公告)日：2024-10-29

申请号：US17743992

申请日：2022-05-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Li-Zhen Yu ,  Huan-Chieh Su ,  Lin-Yu Huang ,  Cheng-Chi Chuang ,  Chih-Hao Wang

IPC分类号： H01L29/423 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L29/4238 ,  H01L21/76804 ,  H01L21/823418 ,  H01L29/0665 ,  H01L29/4933 ,  H01L29/6656

摘要： Methods of forming backside vias connected to source/drain regions of long-channel semiconductor devices and short-channel semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first transistor structure; a second transistor structure adjacent the first transistor structure; a first interconnect structure on a front-side of the first transistor structure and the second transistor structure; and a second interconnect structure on a backside of the first transistor structure and the second transistor structure, the second interconnect structure including a first dielectric layer on the backside of the first transistor structure; a second dielectric layer on the backside of the second transistor structure; a first contact extending through the first dielectric layer and electrically coupled to a first source/drain region of the first transistor structure; and a second contact extending through the second dielectric layer and electrically coupled to a second source/drain region of the second transistor structure, the second contact having a second length less than a first length of the first contact.

公开(公告)号：US12131213B2

公开(公告)日：2024-10-29

申请号：US18249921

申请日：2021-10-18

申请人： Huawei Technologies Co., Ltd.

发明人： Xiuping Zhang ,  Haitao Yi ,  Guohui Ji ,  Shuxin Zhu ,  Yong Xiong

IPC分类号： G06K7/10

CPC分类号： G06K7/10297

摘要： An emulated card switching method, electronic device, and communication system are provided. The method includes sending first information to an near field communication (NFC) card reader which determines a first protocol based on the first information and a protocol supported by the NFC card reader, and performs a service process of the first protocol with the electronic device, if no identification information is obtained, modifying protocol information of a first emulated card from the first information to second information, sending the second information to the NFC card reader which obtains the second information from the electronic device, determines a second protocol based on the second information and the protocol supported by the NFC card reader, and performs a service process of the second protocol with the electronic device, and if identification information is obtained, switching the first emulated card to a second emulated card corresponding to the identification information.

公开(公告)号：US12127257B2

公开(公告)日：2024-10-22

申请号：US17182884

申请日：2021-02-23

申请人： Huawei Technologies Co., Ltd.

发明人： Xiaoli Shi ,  Hongzhuo Zhang ,  Mingzeng Dai ,  Haiyan Luo ,  Wenjie Peng

IPC分类号： H04W74/00 ,  H04W24/10 ,  H04W72/02 ,  H04W72/044 ,  H04W74/0833

CPC分类号： H04W74/0833 ,  H04W72/02 ,  H04W72/046

摘要： Embodiments of this application provide a communication method and a related device. The method includes: receiving, by a radio access network device, first information sent by a terminal device, where the first information includes an identifier of a beam used by the terminal device for random access and random access information of the terminal device on the beam; and optimizing, by the radio access network device, a random access channel based on the first information.

公开(公告)号：US12127053B2

公开(公告)日：2024-10-22

申请号：US18068250

申请日：2022-12-19

申请人： Honor Device Co., Ltd.

发明人： Weiqiang Liu ,  Tongbo Wang ,  Jiang Chen ,  Yun Zhang

IPC分类号： H04W36/00 ,  H04W36/06 ,  H04W36/08 ,  H04W76/11 ,  H04W80/02

CPC分类号： H04W36/0072 ,  H04W36/06 ,  H04W36/08 ,  H04W76/11 ,  H04W80/02

摘要： A method includes: when performing information transmission with a first access point AP on a first frequency band, determining, whether the terminal equipment needs to establish a connection with a second AP, which is a second frequency band; determining, by the terminal equipment, whether the first AP and the second AP are corresponding to a same dual-band radio access device; sending, by the terminal equipment, a connection request to the second AP when maintaining a protocol layer connection with the first AP; and if establishing, by the terminal equipment, the connection with the second AP when the second AP send feedback.

公开(公告)号：US12125922B2

公开(公告)日：2024-10-22

申请号：US18357491

申请日：2023-07-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Sai-Hooi Yeong ,  Bo-Feng Young ,  Chien Ning Yao ,  Chi On Chui

IPC分类号： H01L29/786 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/78696 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device includes: a fin protruding above a substrate; source/drain regions over the fin; nanosheets between the source/drain regions, where the nanosheets comprise a first semiconductor material; inner spacers between the nanosheets and at opposite ends of the nanosheets, where there is an air gap between each of the inner spacers and a respective source/drain region of the source/drain regions; and a gate structure over the fin and between the source/drain regions.

公开(公告)号：US12125877B2

公开(公告)日：2024-10-22

申请号：US18306629

申请日：2023-04-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Guan-Lin Chen ,  Kuo-Cheng Chiang ,  Shi Ning Ju ,  Jung-Chien Cheng ,  Chih-Hao Wang ,  Kuan-Lun Cheng

IPC分类号： H01L29/06 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/0665 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/78696

摘要： A method of forming a semiconductor device includes: forming a fin structure protruding above a substrate, where the fin structure comprises a fin and a layer stack overlying the fin, where the layer stack comprises alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin structure; forming openings in the fin structure on opposing sides of the dummy gate structure, where the openings extend through the layer stack into the fin; forming a dielectric layer in bottom portions of the openings; and forming source/drain regions in the openings on the dielectric layer, where the source/drain regions are separated from the fin by the dielectric layer.