- 专利标题： Nanosheet field-effect transistor device and method of forming
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申请号： US18357491申请日： 2023-07-24
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公开(公告)号： US12125922B2公开(公告)日： 2024-10-22
- 发明人: Sai-Hooi Yeong , Bo-Feng Young , Chien Ning Yao , Chi On Chui
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/08 ; H01L29/423 ; H01L29/66 ; H01L29/78
摘要：
A semiconductor device includes: a fin protruding above a substrate; source/drain regions over the fin; nanosheets between the source/drain regions, where the nanosheets comprise a first semiconductor material; inner spacers between the nanosheets and at opposite ends of the nanosheets, where there is an air gap between each of the inner spacers and a respective source/drain region of the source/drain regions; and a gate structure over the fin and between the source/drain regions.
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