NANOWIRE STRUCTURED PHOTODIODE WITH A SURROUNDING EPITAXIALLY GROWN P OR N LAYER
    6.
    发明申请
    NANOWIRE STRUCTURED PHOTODIODE WITH A SURROUNDING EPITAXIALLY GROWN P OR N LAYER 失效
    纳米结构的光电子体与周边的外延生长的P或N层

    公开(公告)号:US20130341749A1

    公开(公告)日:2013-12-26

    申请号:US13975553

    申请日:2013-08-26

    IPC分类号: H01L31/0232

    摘要: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.

    摘要翻译: 一个实施例涉及一种包括衬底,纳米线和围绕纳米线的掺杂外延层的器件,其中纳米线被配置为既是透射波长到选择波长的通道,又是有源元件,以检测直到 选择性波长通过纳米线传输。 另一个实施例涉及一种包括衬底,纳米线和围绕纳米线的一个或多个光栅的器件,其中纳米线被配置为既是透射波长到选择波长的通道,也包括有源元件,以检测直到 透射通过纳米线的选择性波长,并且其中所述一个或多个摄像机包括外延层。

    Nano wire based passive pixel image sensor
    8.
    发明授权
    Nano wire based passive pixel image sensor 有权
    基于纳米线的无源像素图像传感器

    公开(公告)号:US08384007B2

    公开(公告)日:2013-02-26

    申请号:US12575221

    申请日:2009-10-07

    IPC分类号: H01L31/00

    摘要: An imaging device including a plurality of photo-sensitive elements suitable for imaging small objects less than 500 nm in size. Each of the photo-sentive elements forms a passive pixel which comprises at least one nanowire structured photodetector and a switch transistor. The nanowire structured photodetector is configured to receive the photons and store the photo generated charges and behave as a waveguide. The switch transistor is formed either in the substrate or at the same body of the nanowire and is configured to allow photo-genereated charges in the nanowire to accumulate when off and to drain from the nanowire when on. The pixel array is configured to allow high resolution imaging by arranging in a penny round pattern.

    摘要翻译: 一种成像装置,包括适合于成像尺寸小于500nm的小物体的多个光敏元件。 每个光敏元件形成无源像素,其包括至少一个纳米线结构的光电检测器和开关晶体管。 纳米线结构光电检测器被配置为接收光子并存储光产生的电荷并且表现为波导。 开关晶体管形成在衬底中或在纳米线的同一体上,并且被配置为允许纳米线中的光致发光电荷在关闭时积聚,并且在开启时从纳米线排出。 像素阵列被配置为通过以一分钱圆形图案布置来允许高分辨率成像。

    NANOWIRE ARRAY BASED SOLAR ENERGY HARVESTING DEVICE
    9.
    发明申请
    NANOWIRE ARRAY BASED SOLAR ENERGY HARVESTING DEVICE 有权
    基于纳米阵列的太阳能收集装置

    公开(公告)号:US20120168613A1

    公开(公告)日:2012-07-05

    申请号:US12982269

    申请日:2010-12-30

    摘要: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof and each recess filled with a transparent material. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.

    摘要翻译: 可操作以将光转换成电的光电器件,包括基底,基本上垂直于基底的多个结构,在所述结构之间的一个或多个凹槽,每个凹部在其底壁上具有平面镜,每个凹部填充有透明 材料。 该结构具有用于将光转换成电的p-n或p-i-n结。 平面镜用作电极并且可以将入射到其上的光反射回到要转换成电的结构。

    NANOWIRE ARRAYS
    10.
    发明申请
    NANOWIRE ARRAYS 有权
    纳米阵列

    公开(公告)号:US20120147587A1

    公开(公告)日:2012-06-14

    申请号:US12966573

    申请日:2010-12-13

    申请人: Munib WOBER

    发明人: Munib WOBER

    IPC分类号: F21V9/16 H01L33/04 H01L33/50

    摘要: Described herein is a nanowire array, comprising a substrate, a plurality of fluorescent nanowires extending essentially perpendicularly from the substrate and a reflective layer disposed on the substrate in areas between the fluorescent nanowires; wherein the fluorescent nanowires are operable to fluoresce at a wavelength of a collective mode of the nanowire array.

    摘要翻译: 本文描述的是纳米线阵列,其包括衬底,从衬底基本上垂直延伸的多个荧光纳米线和在荧光纳米线之间的区域中设置在衬底上的反射层; 其中所述荧光纳米线可操作以在所述纳米线阵列的集体模式的波长处发荧光。