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    High productivity spray processing for the metallization of semiconductor workpieces
    3.
    发明授权
    High productivity spray processing for the metallization of semiconductor workpieces 有权
    用于半导体工件金属化的高生产率喷雾处理

    公开(公告)号：US09337374B2

    公开(公告)日：2016-05-10

    申请号：US13726169

    申请日：2012-12-23

    申请人： SOLEXEL, INC.

    发明人： Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Anthony Calcaterra ,  David Dutton ,  Pawan Kapur ,  Sean Seutter ,  Homi Fatemi

    IPC分类号： B05C11/00 ,  H01L31/18 ,  H01L31/05 ,  C23C4/00 ,  C23C4/12

    CPC分类号： H01L31/18 ,  C23C4/01 ,  C23C4/12 ,  H01L31/0516 ,  H01L31/188 ,  Y02E10/50

    摘要： Processing equipment for the metallization of a plurality of semiconductor workpieces. A controlled atmospheric non-oxidizing gas region comprises at least two enclosed deposition zones, the controlled atmospheric non-oxidizing gas region is isolated from external oxidizing ambient. A temperature controller adjusts the temperature of the semiconductor workpiece in each of the at least two enclosed deposition zones. Each of the enclosed deposition zones comprising at least one spray gun for the metallization of the semiconductor workpiece. A transport system moves the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. A batch carrier plate carries the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. The controlled atmospheric non-oxidizing gas region further comprises a gas-based pre-cleaning zone.

    摘要翻译： 用于多个半导体工件的金属化的加工设备。 受控的大气非氧化性气体区域包括至少两个封闭的沉积区域，受控的大气非氧化性气体区域与外部氧化环境隔离。 温度控制器在所述至少两个封闭的沉积区域中的每一个中调节半导体工件的温度。 每个封闭的沉积区域包括用于半导体工件的金属化的至少一个喷枪。 运输系统使半导体工件移动通过受控的大气非氧化气体区域。 批量载体板通过受控的大气非氧化气体区域运送半导体工件。 受控的大气非氧化性气体区域还包括基于气体的预清洁区域。

    Trench isolation for monolithically isled solar photovoltaic cells and modules
    4.
    发明授权
    Trench isolation for monolithically isled solar photovoltaic cells and modules 有权
    单片太阳能光伏电池和模块的沟槽隔离

    公开(公告)号：US09130076B2

    公开(公告)日：2015-09-08

    申请号：US14601202

    申请日：2015-01-20

    申请人： Solexel, Inc.

    发明人： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Heather Deshazer ,  Pawan Kapur

    IPC分类号： H01L21/00 ,  H01L27/04 ,  H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/022458 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

    摘要翻译： 提供制造方法和结构用于形成单片背面接触背面太阳能电池。 在一个实施例中，在背接触太阳能电池基板的背面形成基极和发射极接触金属化。 在背面接合太阳能电池基板的背面形成沟槽阻挡层，并且与基底和发射极接触金属化电气隔离。 沟槽停止层具有用于形成多个半导体区域的图案。 在基极和发射极接触金属化和沟槽停止层上形成电绝缘层。 通过背面接合太阳能电池基板形成沟槽隔离层，其将半导体层分隔成电绝缘层上的多个太阳能电池半导体区域。

    High-productivity porous semiconductor manufacturing equipment
    5.
    发明授权
    High-productivity porous semiconductor manufacturing equipment 有权
    高效多孔半导体制造设备

    公开(公告)号：US08999058B2

    公开(公告)日：2015-04-07

    申请号：US12774667

    申请日：2010-05-05

    申请人： George D. Kamian ,  Somnath Nag ,  Subbu Tamilmani ,  Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Takao Yonehara

    发明人： George D. Kamian ,  Somnath Nag ,  Subbu Tamilmani ,  Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Takao Yonehara

    IPC分类号： C30B1/10 ,  C25D11/32 ,  H01L31/18 ,  C25D17/00 ,  C25D17/06 ,  C25D11/00

    CPC分类号： C25D11/32 ,  C25D11/005 ,  C25D17/001 ,  C25D17/06 ,  C25F3/12 ,  C25F7/00 ,  H01L31/1892 ,  Y02E10/50

    摘要： This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

    摘要翻译： 本公开使得能够高生产率地制造基于半导体的分离层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙率或多孔度层构成），光反射器（由多层/多孔多孔半导体 孔隙度多孔半导体如多孔硅），用于防反射涂层的多孔半导体（例如多孔硅）的形成，钝化层和多结的多带隙太阳能电池（例如，通过形成可变带隙 晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器）。 其他应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率并随后氧化的多孔硅形成）。 此外，本公开可应用于光伏，MEMS（包括传感器和致动器）的独立或集成半导体微电子，半导体微电子芯片和光电子学的一般领域。

    SYSTEMS AND METHODS FOR MONOLITHICALLY INTEGRATED BYPASS SWITCHES IN PHOTOVOLTAIC SOLAR CELLS AND MODULES
    10.
    发明申请
    SYSTEMS AND METHODS FOR MONOLITHICALLY INTEGRATED BYPASS SWITCHES IN PHOTOVOLTAIC SOLAR CELLS AND MODULES 有权
    光伏太阳能电池和模块中单片并置旁路开关的系统与方法

    公开(公告)号：US20140102531A1

    公开(公告)日：2014-04-17

    申请号：US14055813

    申请日：2013-10-16

    申请人： Solexel, Inc.

    发明人： Mehrdad M. Moslehi

    IPC分类号： H01L31/02

    CPC分类号： H01L31/0443 ,  H01L27/1421 ,  H01L31/02008 ,  H01L31/0201 ,  H01L31/02021 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  Y02B10/12 ,  Y02E10/50 ,  Y02E10/547

    摘要： Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass switch comprising a semiconductor layer having background doping, a frontside, and a backside is provided. A patterned first level metal is positioned on the layer backside and an electrically insulating backplane is positioned on the first level metal. A trench isolation pattern partitions the semiconductor layer into a solar cell region and at least one monolithically integrated bypass switch region. A patterned second level metal is positioned on the electrically insulating backplane and which connects to the first level metal through the backplane to complete the electrical metallization of the monolithically integrated solar cell and bypass switch structure.

    摘要翻译： 提供具有集成旁路开关的太阳能电池的结构和方法。 根据一个实施例，提供了一种集成的太阳能电池和旁路开关，其包括具有背景掺杂，前侧和背面的半导体层。 图案化的第一级金属位于层背面，电绝缘背板位于第一级金属上。 沟槽隔离图案将半导体层分隔成太阳能电池区域和至少一个单片集成旁路开关区域。 图案化的第二级金属位于电绝缘背板上，并且通过底板连接到第一级金属，以完成单片集成太阳能电池和旁路开关结构的电气金属化。