公开(公告)号：US08686388B2

公开(公告)日：2014-04-01

申请号：US13547376

申请日：2012-07-12

Applicant: Andreas Roelofs ,  Markus Siegert ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Yongchul Ahn ,  Muralikrishnan Balakrishnan ,  Olle Heinonen

Inventor： Andreas Roelofs ,  Markus Siegert ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Yongchul Ahn ,  Muralikrishnan Balakrishnan ,  Olle Heinonen

IPC: H01L29/02

CPC classification number: G11C13/0007 ,  G11C2213/31 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1608

Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.

Abstract translation: 电阻式感测存储单元包括一层结晶的镨钙锰氧化物和一层无定形的镨钙锰氧化物，其设置在形成电阻式感测存储堆的结晶镨钙锰氧化物层上。 第一和第二电极由电阻式感测存储器堆分隔开。 电阻式感测存储单元还可以包括从无定形镨钙锰氧化物层的层分离结晶镨钙锰氧化物层的氧扩散阻挡层。 方法包括沉积形成电阻式感测存储器叠层的结晶镨钙锰氧化物层上的无定形镨钙锰氧化物。