MULTI-LAYER DISPLAY MODULE
    2.
    发明公开

    公开(公告)号:US20240346982A1

    公开(公告)日:2024-10-17

    申请号:US18389791

    申请日:2023-12-20

    IPC分类号: G09G3/32 G06F3/01

    摘要: A multi-layer display module includes a first display panel, a second display panel, a driving device, and an image composition control unit. The second display panel is located beside the first display panel and overlaps the first display panel. The first display panel and the second display panel have an interval therebetween. The driving device is configured to simultaneously provide image signals to the first display panel and the second display panel. An object image displayed in the first display panel is a first object image. An object image displayed in the second display panel is a second object image. The image composition control unit is configured to increase a size of the first object image displayed on the first display panel or decrease a size of the second object image displayed on the second display panel according to information of a relative position of an outside viewer.

    EPITAXIAL STRUCTURE
    3.
    发明公开
    EPITAXIAL STRUCTURE 审中-公开

    公开(公告)号:US20240339505A1

    公开(公告)日:2024-10-10

    申请号:US18317944

    申请日:2023-05-16

    IPC分类号: H01L29/205

    CPC分类号: H01L29/205

    摘要: An epitaxial structure includes a first type semiconductor layer, an active layer, a second type semiconductor layer, and a lattice mismatch layer. The first type semiconductor layer includes a material of aluminum gallium indium phosphide. The active layer is disposed on a side of the first type semiconductor layer. The second semiconductor layer is disposed on a side of the active layer away from the first type semiconductor layer, and includes the material of aluminum gallium indium phosphide. The lattice mismatch layer includes the material of aluminum gallium indium phosphide and is disposed on any side of the first type semiconductor layer, the active layer, or the second type semiconductor layer. In an X-ray diffractometer analysis spectrum, at least one of the first type semiconductor layer, the active layer and the second type semiconductor layer corresponds to a main diffractive peak, the lattice mismatch layer has a secondary diffractive peak.

    Micro light emitting diode display device

    公开(公告)号:US12094858B2

    公开(公告)日:2024-09-17

    申请号:US17551185

    申请日:2021-12-15

    IPC分类号: H01L25/075 H01L33/62

    CPC分类号: H01L25/0753 H01L33/62

    摘要: A micro light emitting diode display device includes a circuit substrate, a plurality of positioning protrusions disposed on the circuit substrate, and a plurality of micro light emitting diodes. Each positioning protrusion has a positioning side surface and a bottom surface. A first angle is included between each positioning side surface and the corresponding bottom surface. The positioning protrusions form positioning spaces on the circuit substrate. The micro light emitting diodes are disposed in the separated positioning spaces and are electrically connected to the circuit substrate. Each micro light emitting diode has a light emitting surface and a side surface. Each light emitting surface is located at a side of the corresponding micro light emitting diode away from the circuit substrate. A second angle is included between each side surface and the corresponding light emitting surface and is less than 90 degrees and greater than or equal to the first angle.

    Micro-electronic element transfer method

    公开(公告)号:US12087876B2

    公开(公告)日:2024-09-10

    申请号:US18464297

    申请日:2023-09-11

    摘要: A micro-electronic element transfer apparatus including a first conveyer portion, a second conveyer portion, and a light source device is provided. The first conveyer portion is configured to output a plurality of micro-electronic elements. The second conveyer portion includes a first rolling component and a substrate. The substrate is disposed on the first rolling component and is moved through rolling of the first rolling component. A plurality of bumps are disposed on the substrate. The light source device is configured to irradiate the bumps for heating, and the bumps generate a phase transition. When the micro-electronic elements are outputted from the first conveyer portion, a connection force between the micro-electronic elements and the first conveyer portion is less than a connection force between the micro-electronic elements and the bumps. The micro-electronic elements are respectively bonded to the bumps. A micro-electronic element transfer method is also provided.

    Injection device and inspection and repairing method

    公开(公告)号:US11971444B2

    公开(公告)日:2024-04-30

    申请号:US18301966

    申请日:2023-04-17

    发明人: Cheng-Cian Lin

    摘要: Micro light emitting diode inspection and repairing equipment including a carrying stage, an optical inspection module and an injection device is provided. The optical inspection module is arranged corresponding to the carrying stage to capture image information and obtain a position coordinate from the image information. The injection device is adapted to move to a target position of the carrying stage according to the position coordinate. The injection device includes a tube and a nozzle. The tube includes a first portion and a second portion connected to the first portion. The extending direction of the first portion is different from the extending direction of the second portion. A fluid blows to the target position after passing through the tube and the nozzle. An inspection and repairing method adopting the micro light emitting diode inspection and repairing equipment is also provided.

    EPITAXIAL STRUCTURE AND METHOD FOR FORMING THE SAME

    公开(公告)号:US20240128397A1

    公开(公告)日:2024-04-18

    申请号:US17989700

    申请日:2022-11-18

    摘要: An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial layer is different from a material of the first epitaxial layer. The interface treatment layer contacts the first epitaxial layer and the second epitaxial layer and is located between the first epitaxial layer and the second epitaxial layer. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of the TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

    DEFECT DETECTION AND REMOVAL APPARATUS AND METHOD

    公开(公告)号:US20240118222A1

    公开(公告)日:2024-04-11

    申请号:US17990759

    申请日:2022-11-21

    IPC分类号: G01N21/95 G01N21/88 G06T7/00

    摘要: A defect detection and removal apparatus including a removing unit, an image capturing unit, and a determining unit is provided. The removing unit is configured to remove at least one defective micro-element on a substrate. The image capturing unit is configured to capture a detection image of at least one defective micro-element correspondingly on the substrate. The determining unit is coupled to the image capturing unit and the removing unit. The image capturing unit executes capturing a first detection image before the removing unit executes removing a defective micro-element, and executes capturing a second detection image after the removing unit executes removing the defective micro-element. The determining unit confirms whether the defective micro-element has been removed according to the first and second detection image obtained from the image capturing unit. A defect detection and removal method is also provided.

    METHOD FORMING A MICRO LED DISPLAY DEVICE
    9.
    发明公开

    公开(公告)号:US20240096856A1

    公开(公告)日:2024-03-21

    申请号:US18523167

    申请日:2023-11-29

    摘要: A micro LED display device includes: a substrate; a plurality of micro light-emitting diodes disposed on the substrate; and a reflective layer and a black layer sequentially stacked on the substrate. The reflective layer and the black layer cover a surface of the substrate, wherein a top surface of the plurality of micro light-emitting diodes is exposed through the reflective layer and the black layer. A plurality of reflective banks and a plurality of black banks are sequentially disposed on the black layer and exposing the plurality of micro light-emitting diodes; and a color-conversion material covers the top surface of at least one of the plurality of micro light-emitting diodes. The color-conversion material is laterally disposed between the plurality of reflective banks. The reflective layer, the black layer, the plurality of reflective banks, and the plurality of black banks overlap each other in a display direction.

    LIGHT EMITTING DISPLAY UNIT AND DISPLAY APPARATUS

    公开(公告)号:US20240072012A1

    公开(公告)日:2024-02-29

    申请号:US17944199

    申请日:2022-09-14

    摘要: A light emitting display unit includes a redistribution layer (RDL) and multiple light emitting elements. The RDL includes multiple electrode patterns, multiple pad patterns, an insulating layer and multiple conductive through holes. A first gap and a second gap are respectively formed between two adjacent electrode patterns and between corresponding two adjacent pad patterns. A third length of the overlapping area of an orthographic projection of the first gap on the pad patterns and the pad patterns in a first direction is less than or equal to a second length of the second gap in the first direction. The micro light emitting elements are disposed on the RDL and electrically connected with the electrode patterns.