公开(公告)号：US20240153820A1

公开(公告)日：2024-05-09

申请号：US17994412

申请日：2022-11-28

Applicant: PlayNitride Display Co., Ltd.

Inventor： Chang-Rong Lin ,  Ching-Liang Lin

IPC: H01L21/768 ,  B23K26/53

CPC classification number: H01L21/76894 ,  B23K26/53

Abstract: A processing method of a processing apparatus is provided, including step 1, step 2, step 3, and step 4. Step 1 is providing an object having a processed surface, and dividing the processed surface into multiple processed regions, where there is at least one workpiece on each processed region. Step 2 is performing path computation according to the workpiece on each processed region, and generating a processing path in each processed region, where the processing paths in the processed regions are different from each other. Step 3 is performing processing operation by a processing apparatus according to the processing path in one of the processed regions obtained from step 2. Step 4 is moving the processing apparatus to a next processed region after finishing the processing operation on each workpiece in the one of the processed regions. A processing system is also provided.

公开(公告)号：US20240175827A1

公开(公告)日：2024-05-30

申请号：US18082581

申请日：2022-12-16

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yi-Chia Hwang ,  Ching-Liang Lin

IPC: G01N21/95

CPC classification number: G01N21/9505

Abstract: A wafer defect detection device adapted for detecting a sample to be tested including two detection features is provided. The wafer defect detection device includes a stage adapted for holding the sample to be tested, a light source module configured to output a detection light to the sample to be tested and reflect a reflected light, and an image sensor disposed on a path of the reflected light and adapted for receiving an image frame. The detection light includes spectra of a first light and a second light, which have two different peak wavelengths. The spectrum of the first light is adapted for detecting one of the detection features. The spectrum of the second light is adapted for detecting other one of the detection features. Luminous intensities of the first light and the second light are independently controlled. The reflected light includes the image frame, which displays the detection features.

公开(公告)号：US20240118222A1

公开(公告)日：2024-04-11

申请号：US17990759

申请日：2022-11-21

Applicant: PlayNitride Display Co., Ltd.

Inventor： Chang-Rong Lin ,  Ching-Liang Lin

IPC: G01N21/95 ,  G01N21/88 ,  G06T7/00

CPC classification number: G01N21/9501 ,  G01N21/8851 ,  G06T7/001 ,  G01N2021/8887 ,  G06T2207/30148

Abstract: A defect detection and removal apparatus including a removing unit, an image capturing unit, and a determining unit is provided. The removing unit is configured to remove at least one defective micro-element on a substrate. The image capturing unit is configured to capture a detection image of at least one defective micro-element correspondingly on the substrate. The determining unit is coupled to the image capturing unit and the removing unit. The image capturing unit executes capturing a first detection image before the removing unit executes removing a defective micro-element, and executes capturing a second detection image after the removing unit executes removing the defective micro-element. The determining unit confirms whether the defective micro-element has been removed according to the first and second detection image obtained from the image capturing unit. A defect detection and removal method is also provided.

公开(公告)号：US20240413277A1

公开(公告)日：2024-12-12

申请号：US18353114

申请日：2023-07-17

Applicant: PlayNitride Display Co., Ltd.

Inventor： BOON KHOON TEE ,  You-Lin Peng ,  Chee-Yun Low ,  Wan-Jung Peng ,  Pai-Yang Tsai ,  Ching-Liang Lin ,  Fei-Hong Chen

IPC: H01L33/58 ,  H01L33/24 ,  H01L33/38

Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer. The outer surface of the second-type semiconductor layer exposes a lower surface of the diffusion structure away from the first-type semiconductor layer.

公开(公告)号：US20240175826A1

公开(公告)日：2024-05-30

申请号：US18082562

申请日：2022-12-15

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yi-Chia Hwang ,  Ching-Liang Lin

IPC: G01N21/95

CPC classification number: G01N21/9505 ,  G01N2201/0636

Abstract: A wafer defect inspection apparatus including a carrier base, a light source module, a beam splitter, filters and image sensors are provided. The carrier base carries a sample to be tested. The light source module includes an illuminating unit and a pellicle mirror. The illuminating unit emits an inspection light ray. A reflective surface is capable of reflecting the inspection light ray to the sample to be tested, so that a reflective light ray formed by reflecting the inspection light ray reflected by the sample to be tested passes through the pellicle mirror and is then split into splitting light rays by the beam splitter. The filters are configured to be passed through by different bands corresponding to the splitting light rays. The image sensors receive the splitting light rays to generate imaging frames. Two corresponding positions in any two of the imaging frames have two different contrast ratios.