公开(公告)号：US20230343897A1

公开(公告)日：2023-10-26

申请号：US17748049

申请日：2022-05-19

申请人： PlayNitride Display Co., Ltd.

发明人： You-Lin Peng ,  Wan-Jung Peng ,  Fei-Hong Chen ,  Pai-Yang Tsai ,  Tzu-Yang Lin

IPC分类号： H01L33/38 ,  H01L33/62

CPC分类号： H01L33/382 ,  H01L33/62

摘要： A micro light emitting diode structure including an epitaxial structure, an electrode layer and a barrier layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. An orthogonal projection area of the barrier layer on the epitaxial structure is greater than and covers an orthogonal projection area of the electrode layer on the epitaxial structure.

公开(公告)号：US20230343898A1

公开(公告)日：2023-10-26

申请号：US17988784

申请日：2022-11-17

申请人： PlayNitride Display Co., Ltd.

发明人： You-Lin Peng ,  Wan-Jung Peng ,  Fei-Hong Chen ,  Pai-Yang Tsai ,  Tzu-Yang Lin

IPC分类号： H01L33/62 ,  H01L25/075 ,  H01L33/38

CPC分类号： H01L33/382 ,  H01L25/0753 ,  H01L33/62

摘要： A micro light emitting diode structure including an epitaxial structure, an electrode layer, a barrier layer and a bonding layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. The bonding layer is disposed on the barrier layer and away from the electrode layer.