公开(公告)号：US20230128274A1

公开(公告)日：2023-04-27

申请号：US17551185

申请日：2021-12-15

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yu-Yun Lo ,  Bo-Wei Wu ,  Chang-Feng Tsai ,  Shiang-Ning Yang

IPC: H01L25/075 ,  H01L33/62

Abstract: A micro light emitting diode display device includes a circuit substrate, a plurality of positioning protrusions disposed on the circuit substrate, and a plurality of micro light emitting diodes. Each positioning protrusion has a positioning side surface and a bottom surface. A first angle is included between each positioning side surface and the corresponding bottom surface. The positioning protrusions form positioning spaces on the circuit substrate. The micro light emitting diodes are disposed in the separated positioning spaces and are electrically connected to the circuit substrate. Each micro light emitting diode has a light emitting surface and a side surface. Each light emitting surface is located at a side of the corresponding micro light emitting diode away from the circuit substrate. A second angle is included between each side surface and the corresponding light emitting surface and is less than 90 degrees and greater than or equal to the first angle.

公开(公告)号：US20240097067A1

公开(公告)日：2024-03-21

申请号：US18527387

申请日：2023-12-04

Applicant: PlayNitride Display Co., Ltd.

Inventor： Bo-Wei Wu ,  Yu-Yun Lo ,  Chien-Chen Kuo ,  Chang-Feng Tsai ,  Tzu-Yang Lin

IPC: H01L33/00 ,  H01L21/66 ,  H01L21/683 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L33/0095 ,  H01L21/6835 ,  H01L22/22 ,  H01L25/0753 ,  H01L33/62 ,  G09G3/32 ,  H01L2933/0066

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

公开(公告)号：US20230027804A1

公开(公告)日：2023-01-26

申请号：US17577387

申请日：2022-01-18

Applicant: PlayNitride Display Co., Ltd.

Inventor： Bo-Wei Wu ,  Hsiang-Wen Tang ,  Yu-Yun Lo ,  Shiang-Ning Yang ,  Chang-Feng Tsai

IPC: H01L25/075 ,  H01L33/10 ,  H01L27/15

Abstract: A micro light-emitting display device having multiple display regions is provided. The micro light-emitting display device includes a substrate, multiple micro light-emitting elements, and multiple first light-emitting auxiliary structures. The micro light-emitting elements are disposed on the substrate, and positions of the micro light-emitting elements define ranges of the display regions. The micro light-emitting elements have a same first pitch between each other in any one of the display regions. The micro light-emitting elements have a second pitch between each other at a boundary across any two adjacent display regions. The first pitch is different from the second pitch. The light-emitting auxiliary structures are respectively disposed on the micro light-emitting elements. The light-emitting auxiliary structures have a same third pitch between each other.

公开(公告)号：US20230083176A1

公开(公告)日：2023-03-16

申请号：US17520628

申请日：2021-11-06

Applicant: PlayNitride Display Co., Ltd.

Inventor： Bo-Wei Wu ,  Yu-Yun Lo ,  Shiang-Ning Yang ,  Chang-Feng Tsai

IPC: H01L33/22 ,  H01L33/00

Abstract: A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.

公开(公告)号：US12057528B2

公开(公告)日：2024-08-06

申请号：US17543836

申请日：2021-12-07

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yu-Yun Lo ,  Bo-Wei Wu ,  Chang-Feng Tsai

IPC: H01L33/48 ,  H01L25/075 ,  H01L33/12 ,  H01L33/38

CPC classification number: H01L33/483 ,  H01L25/0753 ,  H01L33/12 ,  H01L33/382

Abstract: A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.

公开(公告)号：US12015103B2

公开(公告)日：2024-06-18

申请号：US17315366

申请日：2021-05-10

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yu-Yun Lo ,  Bo-Wei Wu ,  Shiang-Ning Yang ,  Chang-Feng Tsai

IPC: H01L33/06 ,  C30B25/18 ,  C30B29/40 ,  G09G3/32 ,  H01L25/075 ,  H01L27/12 ,  H01L27/146 ,  H01L27/15 ,  H01L33/08 ,  H01L25/16 ,  H01L33/38

CPC classification number: H01L33/06 ,  C30B25/183 ,  C30B29/406 ,  G09G3/32 ,  H01L25/0753 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/14692 ,  H01L27/153 ,  G09G2300/0452 ,  H01L25/167 ,  H01L33/08 ,  H01L33/382

Abstract: A micro light emitting diode display panel includes a backplane and a plurality of micro light emitting diode chips. The backplane includes a plurality first electrode lines and a plurality of second electrode lines. The first electrode lines and the second electrode lines define a plurality of sub-pixel regions arranged in an array form. The micro light emitting diode chips are disposed on the backplane and respectively located in the sub-pixel regions. Each of the micro light emitting diode chips has a first electrode, a plurality of second electrodes and a plurality of light-emitting regions. The first electrode is boned to one of the first electrode lines, and the second electrodes are boned to one of the second met lines. In a defect sub-pixel region, the electrical connection between one of the second electrodes and the corresponding one of the second electrode lines is cut to isolate.

公开(公告)号：US12009456B2

公开(公告)日：2024-06-11

申请号：US17520628

申请日：2021-11-06

Applicant: PlayNitride Display Co., Ltd.

Inventor： Bo-Wei Wu ,  Yu-Yun Lo ,  Shiang-Ning Yang ,  Chang-Feng Tsai

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/32

Abstract: A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.

公开(公告)号：US12132144B2

公开(公告)日：2024-10-29

申请号：US18527387

申请日：2023-12-04

Applicant: PlayNitride Display Co., Ltd.

Inventor： Bo-Wei Wu ,  Yu-Yun Lo ,  Chien-Chen Kuo ,  Chang-Feng Tsai ,  Tzu-Yang Lin

IPC: H01L33/00 ,  H01L21/66 ,  H01L21/683 ,  H01L25/075 ,  H01L33/62 ,  G09G3/32

CPC classification number: H01L33/0095 ,  H01L21/6835 ,  H01L22/22 ,  H01L25/0753 ,  H01L33/62 ,  G09G3/32 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/0066

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

公开(公告)号：US12094858B2

公开(公告)日：2024-09-17

申请号：US17551185

申请日：2021-12-15

Applicant: PlayNitride Display Co., Ltd.

Inventor： Yu-Yun Lo ,  Bo-Wei Wu ,  Chang-Feng Tsai ,  Shiang-Ning Yang

IPC: H01L25/075 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/62

Abstract: A micro light emitting diode display device includes a circuit substrate, a plurality of positioning protrusions disposed on the circuit substrate, and a plurality of micro light emitting diodes. Each positioning protrusion has a positioning side surface and a bottom surface. A first angle is included between each positioning side surface and the corresponding bottom surface. The positioning protrusions form positioning spaces on the circuit substrate. The micro light emitting diodes are disposed in the separated positioning spaces and are electrically connected to the circuit substrate. Each micro light emitting diode has a light emitting surface and a side surface. Each light emitting surface is located at a side of the corresponding micro light emitting diode away from the circuit substrate. A second angle is included between each side surface and the corresponding light emitting surface and is less than 90 degrees and greater than or equal to the first angle.

公开(公告)号：US11901479B2

公开(公告)日：2024-02-13

申请号：US17325179

申请日：2021-05-19

Applicant: PlayNitride Display Co., Ltd.

Inventor： Bo-Wei Wu ,  Yu-Yun Lo ,  Chien-Chen Kuo ,  Chang-Feng Tsai ,  Tzu-Yang Lin

IPC: H01L33/00 ,  H01L25/075 ,  H01L21/66 ,  H01L21/683 ,  H01L33/62 ,  G09G3/32

CPC classification number: H01L33/0095 ,  H01L21/6835 ,  H01L22/22 ,  H01L25/0753 ,  H01L33/62 ,  G09G3/32 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/0066

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first microelectronic elements on a first temporary substrate; and replacing at least one defective microelectronic element of the first microelectronic elements with at least one second microelectronic element. The first microelectronic elements and at least one second microelectronic element are distributed on the first temporary substrate. The first microelectronic elements and at least one second microelectronic element have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first microelectronic elements and at least one second microelectronic element. A semiconductor structure and a display panel are also provided.