公开(公告)号：US12095003B2

公开(公告)日：2024-09-17

申请号：US17489799

申请日：2021-09-30

Applicant: PlayNitride Display Co., Ltd.

Inventor： Hsin-Chiao Fang ,  Jyun-De Wu

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/02 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/14 ,  H01L33/025 ,  H01L33/0095 ,  H01L33/305 ,  H01L33/382 ,  H01L33/40 ,  H01L2933/0016

Abstract: A micro light emitting diode chip including a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first-type electrode, and a second-type electrode is provided. The first-type semiconductor layer has a first high-concentration doping region and a first low-concentration doping region. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first-type electrode is directly contacted and electrically connected to the first high-concentration doping region. The second-type electrode is electrically connected to the second-type semiconductor layer.

公开(公告)号：US11189577B2

公开(公告)日：2021-11-30

申请号：US16840823

申请日：2020-04-06

Applicant: PlayNitride Display Co., Ltd.

Inventor： Hsin-Chiao Fang ,  Shen-Jie Wang ,  Yen-Lin Lai

IPC: H01L23/00 ,  H01L21/02 ,  H01L29/20

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.

公开(公告)号：US20240097070A1

公开(公告)日：2024-03-21

申请号：US17976870

申请日：2022-10-31

Applicant: PlayNitride Display Co., Ltd.

Inventor： Hsin-Chiao Fang ,  Shen-Jie Wang ,  Yen-Lin Lai

IPC: H01L33/12 ,  H01L33/02 ,  H01L33/30

CPC classification number: H01L33/12 ,  H01L33/025 ,  H01L33/30

Abstract: A micro light-emitting component including a first type cladding layer, a light-emitting layer, a second type cladding layer, a plurality of window layers and at least one interposer is provided. The light-emitting layer is located on the first type cladding layer, and the second type cladding layer is located on the light-emitting layer. The light-emitting layer is located between the first type cladding layer and the second type cladding layer. The window layers are located on the second type cladding layer. The interposer is located between any two adjacent of the window layers. An ion doping concentration of the interposer is less than or equal to an ion doping concentration of the window layers.

公开(公告)号：US11658268B2

公开(公告)日：2023-05-23

申请号：US17093590

申请日：2020-11-09

Applicant: PlayNitride Display Co., Ltd.

Inventor： Hsin-Chiao Fang ,  Yen-Lin Lai ,  Jyun-De Wu

IPC: H01L33/26 ,  H01L33/22

CPC classification number: H01L33/26 ,  H01L33/22

Abstract: A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.

公开(公告)号：US20240339505A1

公开(公告)日：2024-10-10

申请号：US18317944

申请日：2023-05-16

Applicant: PlayNitride Display Co., Ltd.

Inventor： Shen-Jie Wang ,  Hsin-Chiao Fang ,  Yen-Lin Lai

IPC: H01L29/205

CPC classification number: H01L29/205

Abstract: An epitaxial structure includes a first type semiconductor layer, an active layer, a second type semiconductor layer, and a lattice mismatch layer. The first type semiconductor layer includes a material of aluminum gallium indium phosphide. The active layer is disposed on a side of the first type semiconductor layer. The second semiconductor layer is disposed on a side of the active layer away from the first type semiconductor layer, and includes the material of aluminum gallium indium phosphide. The lattice mismatch layer includes the material of aluminum gallium indium phosphide and is disposed on any side of the first type semiconductor layer, the active layer, or the second type semiconductor layer. In an X-ray diffractometer analysis spectrum, at least one of the first type semiconductor layer, the active layer and the second type semiconductor layer corresponds to a main diffractive peak, the lattice mismatch layer has a secondary diffractive peak.

公开(公告)号：US20240128397A1

公开(公告)日：2024-04-18

申请号：US17989700

申请日：2022-11-18

Applicant: PlayNitride Display Co., Ltd.

Inventor： Hsin-Chiao Fang ,  Shen-Jie Wang ,  Yen-Lin Lai

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/36

CPC classification number: H01L33/0062 ,  H01L33/06 ,  H01L33/30 ,  H01L33/36

Abstract: An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial layer is different from a material of the first epitaxial layer. The interface treatment layer contacts the first epitaxial layer and the second epitaxial layer and is located between the first epitaxial layer and the second epitaxial layer. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of the TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

公开(公告)号：US20210367105A1

公开(公告)日：2021-11-25

申请号：US17076781

申请日：2020-10-21

Applicant: PlayNitride Display Co., Ltd.

Inventor： Tzu-Wen Wang ,  Hsin-Chiao Fang

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/62

Abstract: A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.

公开(公告)号：US20240128398A1

公开(公告)日：2024-04-18

申请号：US17994016

申请日：2022-11-25

Applicant: PlayNitride Display Co., Ltd.

Inventor： Hsin-Chiao Fang ,  Shen-Jie Wang ,  Yen-Lin Lai

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/30

CPC classification number: H01L33/0062 ,  H01L33/06 ,  H01L33/30

Abstract: An epitaxial structure includes a first epitaxial layer, a second epitaxial layer, and an interface treatment layer. The second epitaxial layer is disposed on the first epitaxial layer. The interface treatment layer is located between the first epitaxial layer and the second epitaxial layer and is in contact with the first epitaxial layer and the second epitaxial layer. The first epitaxial layer, the second epitaxial layer, and the interface treatment layer include the same material. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of a TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

公开(公告)号：US20230008639A1

公开(公告)日：2023-01-12

申请号：US17489799

申请日：2021-09-30

Applicant: PlayNitride Display Co., Ltd.

Inventor： Hsin-Chiao Fang ,  Jyun-De Wu

IPC: H01L33/14 ,  H01L33/02

Abstract: A micro light emitting diode chip including a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first-type electrode, and a second-type electrode is provided. The first-type semiconductor layer has a first high-concentration doping region and a first low-concentration doping region. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first-type electrode is directly contacted and electrically connected to the first high-concentration doping region. The second-type electrode is electrically connected to the second-type semiconductor layer.

公开(公告)号：US11411136B2

公开(公告)日：2022-08-09

申请号：US17076781

申请日：2020-10-21

Applicant: PlayNitride Display Co., Ltd.

Inventor： Tzu-Wen Wang ,  Hsin-Chiao Fang

IPC: H01L33/30 ,  H01L33/62 ,  H01L33/00

Abstract: A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.