APPARATUS FOR DETERMINING 3-DIMENSIONAL ATOMIC LEVEL STRUCTURE AND METHOD THEREOF

    公开(公告)号:US20220188696A1

    公开(公告)日:2022-06-16

    申请号:US17132762

    申请日:2020-12-23

    Abstract: A data generating method includes: an atomic model generating step of generating one or more three-dimensional atomic models corresponding to a nanomaterial to be measured; a three-dimensional data generating step of generating three-dimensional atomic level structure volume data corresponding to the nanomaterial to be measured based on the one or more three-dimensional atomic model; a tilt series generating step of generating a tilt series by simulating three-dimensional tomography for a plurality of different angles in a predetermined angle range for at least some of the three-dimensional atomic level structure volume data; and a three-dimensional atomic structure tomogram volume data generating step of generating a three-dimensional atomic structure tomogram volume data set by performing three-dimensional reconstruction on at least some of the three-dimensional atomic level structure volume data based on the tilt series.

    MEMS device having curved reflective layer and method for manufacturing MEMS device

    公开(公告)号:US11359973B2

    公开(公告)日:2022-06-14

    申请号:US17328773

    申请日:2021-05-24

    Abstract: A MEMS device according to an example embodiment of the present disclosure includes: a lower substrate; an infrared sensor formed on the lower substrate; and a lower bonding pad disposed to cover the infrared sensor. The infrared sensor includes: a metal pad formed on an upper surface of the lower substrate and electrically connected to a detection circuit; a reflective layer formed on the upper surface of the lower substrate and reflecting an infrared band; an absorption plate disposed to be spaced apart from an upper portion of the reflective layer and absorbing infrared rays to change resistance; and an anchor formed on the metal pad to support the absorption plate and to electrically connect the metal pad and the absorption plate to each other. The reflective layer has a curved or stepped shape such that a distance between the reflective layer and the absorption plate varies depending on a position of the reflective layer.

    FABRICATION METHOD OF CONDUCTIVE NANONETWORKS USING MASTERMOLD

    公开(公告)号:US20220181048A1

    公开(公告)日:2022-06-09

    申请号:US17539606

    申请日:2021-12-01

    Abstract: There is provided a fabrication method of conductive nanonetworks using a mastermold by which, in forming the conductive nanonetworks, electrical properties and optical properties of the conductive nanonetworks are improved by excluding contact resistance between nanowires and minimizing surface roughness of the conductive nanonetworks, and a nanoelectrode having a large area can be easily formed by applying a method of replicating the conductive nanonetworks on the mastermold to a substrate. The fabrication method of conductive nanonetworks using a mastermold includes: preparing a mastermold that has a conductive nanonetwork replicating region patterned in relief; coating the mastermold with a conductive material; and forming conductive nanonetworks on an application target substrate by replicating a conductive material, with which the conductive nanonetwork replicating region is coated, onto the application target substrate.

    FABRICATION METHOD OF CONDUCTIVE NANONETWORKS THROUGH ADAPTATION OF SACRIFICIAL LAYER

    公开(公告)号:US20220181047A1

    公开(公告)日:2022-06-09

    申请号:US17539660

    申请日:2021-12-01

    Abstract: There is provided a fabrication method of conductive nanonetworks through adaptation of a sacrificial layer includes: forming nanowire networks on a substrate; forming the sacrificial layer on a front surface of the substrate including the nanowire networks; removing the nanowire networks to expose a surface of the substrate within a region from which the nanowire networks are removed; forming a conductive material on the front surface of the substrate to fill the region, from which the nanowire networks are removed, with the conductive material while forming the conductive material on the sacrificial layer; and forming conductive nanonetworks made of the conductive material which fills the region from which the nanowire networks are removed, by removing the sacrificial layer.

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