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公开(公告)号:US11781995B2
公开(公告)日:2023-10-10
申请号:US17686317
申请日:2022-03-03
发明人: Chao-Tung Wu , Kuo-Chung Yu , Chung-Hao Hu , Sheng-Ping Weng
CPC分类号: G01N21/9503 , C25D5/50 , C25D17/001 , G06T7/0008 , H01L21/67253 , H04N7/188 , G06T2207/30148
摘要: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, an edge detector and a trigger device. The transfer chamber is configured to interface with an electroplating apparatus. The robot arm is arranged to transfer a wafer from the transfer chamber to the annealing station. The edge detector, disposed over a predetermined location between the transfer chamber and the annealing station, comprises a first charge-coupled device (CCD) sensor and a second CCD sensor. When the robot arm is carrying the wafer to pass through the predetermined location, the first CCD sensor and the second CCD sensor are located over a first portion and a second portion of the edge bevel removal area respectively, and the trigger device is configured to activate the first CCD sensor and the second CCD sensor to capture an image of the first portion and an image of the second portion respectively.
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公开(公告)号:US20230314343A1
公开(公告)日:2023-10-05
申请号:US18194905
申请日:2023-04-03
发明人: Daisuke Hishitani
CPC分类号: G01N21/9503 , G01N21/8806 , G01N21/8851 , G01N2021/8819
摘要: In a substrate processing apparatus according to the invention, a light source and an imager are arranged at a position distant from an object to be imaged such as a substrate, whereas a head unit is arranged at an imaging position. Diffused light is generated by diffusing and reflecting illumination light from the light source and illuminated a peripheral edge part of the object to be imaged. Further, reflected light from the peripheral edge part illuminated with the diffused light is guided to the imager, whereby the peripheral edge part is imaged by the imager.
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公开(公告)号:US20230304944A1
公开(公告)日:2023-09-28
申请号:US18041279
申请日:2021-08-13
IPC分类号: G01N21/95
CPC分类号: G01N21/9501 , G01N2201/06113
摘要: Described are devices and methods for measuring semiconductor materials, devices, circuits, and systems. The device includes a probe head that accepts multiple optical assemblies. At least one optical assembly provides a light source, and at least one optical assembly provides a detector. Both are coupled to the probe head. The optical assemblies may be manually or automatically adjustable using kinematic mounts, and may include optical fibers for conveying light to and from a sample. Each optical assembly may include a lens stack or an objective. Illumination and collection assemblies may share a common focal point, and different subsets of assemblies may share different focal points. The device may include a sample bed for imaging multiple samples at once, and may be coupled to a control system for automatically positioning the samples and/or the optical assemblies.
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公开(公告)号:US20230296581A1
公开(公告)日:2023-09-21
申请号:US18184708
申请日:2023-03-16
发明人: Bastian Sauerer
CPC分类号: G01N33/246 , G01N33/1833 , G01N21/95
摘要: A method can include receiving, by a demulsifier analysis framework, tensiometer data for an oil and water field sample that includes an added candidate demulsifier, where the tensiometer data include rheology data with respect to frequency and where the demulsifier analysis framework includes a model derived at least in part on bottle test data for demulsifiers in oil and water emulsions; determining a performance characteristic for the candidate demulsifier with respect to the oil and water field sample using the tensiometer data as input to the model of the demulsifier analysis framework without performing a bottle test on the oil and water field sample; and outputting, by the demulsifier analysis framework, the performance characteristic for the candidate demulsifier with respect to breaking an emulsion of the oil and water field sample.
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公开(公告)号:US11761905B2
公开(公告)日:2023-09-19
申请号:US17412380
申请日:2021-08-26
发明人: I-Che Lee , Huai-Ying Huang
IPC分类号: G01N21/95 , G06T7/00 , G01N21/956 , H01L21/66 , H01L21/67
CPC分类号: G01N21/9501 , G01N21/95607 , G06T7/001 , H01L22/12 , G06T2207/30148 , H01L21/67023
摘要: A semiconductor device inspection method including: depositing a dielectric material over a substrate to form an interconnect-level dielectric (ILD) layer; patterning the ILD layer to form via structures in the ILD layer; depositing an electrically conductive material to form an inspection layer on the ILD layer and in the via structures; imaging the inspection layer to generate image data; and detecting any defects in the via structures by analyzing the image data.
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公开(公告)号:US11748868B2
公开(公告)日:2023-09-05
申请号:US17464638
申请日:2021-09-01
申请人: KLA CORPORATION
CPC分类号: G06T7/0006 , G01N21/8851 , G01N21/9501 , G06F18/22 , G01N2021/8887 , G06T2207/30148
摘要: Images of semiconductor wafers can be hashed to determine a fixed length hash string for each of the images. Pattern synonyms can be determined from the hash strings. The pattern synonyms can be grouped. A degree of similarity between images in the groups is adjustable via a hamming distance. This can be used for various applications, including determination of latent defects.
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公开(公告)号:US20230273132A1
公开(公告)日:2023-08-31
申请号:US18312873
申请日:2023-05-05
申请人: The Boeing Company
发明人: Morteza SAFAI
IPC分类号: G01N21/88 , G01N21/95 , B29C64/393 , B29C64/371 , B33Y30/00 , B33Y50/02 , B33Y10/00
CPC分类号: G01N21/8806 , G01N21/95 , B29C64/393 , B29C64/371 , B33Y30/00 , B33Y50/02 , B33Y10/00 , G01N21/8851 , G01N2201/06113 , G01N2201/0628 , G01N2201/0627
摘要: A method for real-time surface imperfection detection for additive manufacturing and 3-D printing parts is provided. The method includes directing a first light radiation using one or more illumination sources, wherein the first light radiation illuminates a target area of a part being manufactured in a uniform chromatic light such that the target area appears to have a substantially uniform monochromatic color; capturing a current image of a second light radiation that is scattered or reflected by the target area using one or more feedback cameras; and analyzing the current image of the second light radiation using at least one of the one or more feedback camera with a previously acquired image to determine whether a surface imperfection exists or does not exist.
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公开(公告)号:US11740186B2
公开(公告)日:2023-08-29
申请号:US17406784
申请日:2021-08-19
申请人: SEMES CO., LTD.
发明人: Myoung Hoon Woo
IPC分类号: G01N21/95 , G01N21/956 , G06T7/00 , G01N21/88 , G06T7/11
CPC分类号: G01N21/95607 , G01N21/8806 , G01N21/9501 , G06T7/001 , G06T7/11 , G01N2021/8887 , G06T2207/30148
摘要: An image acquiring method, an image acquiring apparatus and a wafer inspection apparatus are disclosed. A line scan camera is disposed above a transfer path of a wafer to continuously acquire partial images having a predetermined size by imaging a scan area including a portion of the transfer path, and the partial images are stored in an image storage unit. A partial image including a predetermined feature point among the partial images is detected by an image analysis unit, and an image merging unit merges a predetermined number of partial images including the detected partial image to acquire an entire image of the wafer. An image inspection unit analyzes the entire image of the wafer to detect defects in the wafer.
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公开(公告)号:US11733177B2
公开(公告)日:2023-08-22
申请号:US17256885
申请日:2020-03-11
发明人: Soon-ku Hong , Si Trong Ngo , Duy Duc Le , Jungkuk Lee
CPC分类号: G01N21/9505 , G01B11/22 , G01N21/8422 , G01N21/95607 , H01L22/24 , G01N2021/8477
摘要: Disclosed is a method for estimating twin defect density in a single-crystal sample, including: (A) etching the observed surface of a single crystal to form etch pits; (B) selecting bar-shaped etch pits caused by twin defect; (C) from the long-axis direction lengths of the etch pits caused by twin defect, estimating the twin defect density by using the following equation: twin defect density=Σkx′i/area of sample, wherein 2≤k≤3, and x′i is the long-axis direction length of an etch pit caused by the i-th twin.
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公开(公告)号:US11721571B2
公开(公告)日:2023-08-08
申请号:US17501382
申请日:2021-10-14
发明人: Soon Wei Wong , Victor Vertoprakhov
CPC分类号: H01L21/67288 , G01N21/9501 , G06T7/60 , G06T11/206 , H04N23/56 , H04N23/695 , G06T2207/20072 , G06T2207/30148 , H01L24/49 , H01L2224/4917
摘要: An apparatus and method for measuring loop height of overlapping bonded wires, interconnecting the pads of a single or stacked silicon chips to the pads of a substrate taking the steps of: focussing of an optical assembly at multiple points of the bond wire including overlapping bond wires, capturing an image of the bond wire at each of the predetermined focused points; calculating the height of each point of the wire with respect to a reference plane; and tabulating the height data using the X, Y and Z coordinates.
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