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92 条记录 (耗时 0.018 秒)

    Semiconductor substrates and structures
    82.
    发明授权
    Semiconductor substrates and structures 失效
    半导体衬底和结构

    公开(公告)号：US06818925B2

    公开(公告)日：2004-11-16

    申请号：US10423149

    申请日：2003-04-25

    申请人： John Stephen Massa ,  Adrian John Taylor ,  Rodney Hollands Moss

    发明人： John Stephen Massa ,  Adrian John Taylor ,  Rodney Hollands Moss

    IPC分类号： H01L3300

    CPC分类号： H01L21/02241 ,  B82Y20/00 ,  H01L21/02312 ,  H01L21/31662 ,  H01L33/0062 ,  H01S5/0206 ,  H01S5/2275 ,  H01S5/3414 ,  H01S2301/173

    摘要： An oxide layer on an indium phosphide semiconductor substrate is doped with silicon. This enables epitaxial layers to be deposited upon the substrate in a conventional manner, including mesa etching and overgrowth, to form a semiconductor structure. The doped oxide layer is thought to reduce diffusion of phosphorus out of the substrate and thus to reduce the zinc levels in the active region of the structure. Additionally, or as an alternative, after mesa etching oxide can be formed on the mesa sides and then doped with silicon. Conventional blocking layers can then be formed over the doped oxide, reducing the diffusion of zinc from the blocking layers into the rest of the structure.

    摘要翻译： 磷化铟半导体衬底上的氧化物层掺杂有硅。 这使得能够以常规方式将外延层沉积在衬底上，包括台面蚀刻和过度生长，以形成半导体结构。 认为掺杂的氧化物层可以减少磷从衬底的扩散，从而降低结构有源区的锌含量。 另外，或作为替代方案，在台面蚀刻之后可以在台面上形成氧化物，然后用硅掺杂。 然后可以在掺杂的氧化物上形成常规的阻挡层，减少锌从阻挡层扩散到结构的其余部分。

    Semiconductor laser device and manufacturing method thereof
    83.
    发明授权
    Semiconductor laser device and manufacturing method thereof 失效
    半导体激光器件及其制造方法

    公开(公告)号：US06810055B2

    公开(公告)日：2004-10-26

    申请号：US09984000

    申请日：2001-10-26

    申请人： Nobuhiro Ohkubo

    发明人： Nobuhiro Ohkubo

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  G11B7/127 ,  H01S5/1057 ,  H01S5/164 ,  H01S5/3054 ,  H01S5/3414

    摘要： A semiconductor laser device has a quantum well active layer including a well layer and a barrier layer laminated on a semiconductor substrate. The quantum well active layer contains II group atoms such as Zn atoms. The quantum well active layer is so formed that a bandgap of the quantum well active layer in the vicinity of an end surface of a laser resonator is larger than a bandgap of the quantum well active layer inside the laser resonator. The II group atoms contained in the quantum well active layer inside the laser resonator make up for vacancies introduced therein so as to inhibit fluctuation of the bandgap of the quantum well active layer inside the laser resonator and thereby to enhance long-term reliability of the semiconductor laser device.

    摘要翻译： 半导体激光器件具有包括层叠在半导体衬底上的阱层和势垒层的量子阱活性层。 量子阱活性层含有II族原子如Zn原子。 量子阱有源层被形成为使得激光谐振器的端面附近的量子阱有源层的带隙大于激光谐振器内的量子阱有源层的带隙。 包含在激光谐振器内部的量子阱有源层中的II族原子构成了引入其中的空位，以便抑制激光谐振器内的量子阱有源层的带隙波动，从而提高半导体的长期可靠性 激光装置。

    Single-waveguide integrated wavelength demux photodetector and method of making it
    85.
    发明授权
    Single-waveguide integrated wavelength demux photodetector and method of making it 失效
    单波导集成波长解复用光电探测器及其制作方法

    公开(公告)号：US06731850B1

    公开(公告)日：2004-05-04

    申请号：US09988031

    申请日：2001-11-16

    申请人： Edward H. Sargent

    发明人： Edward H. Sargent

    IPC分类号： G02B610

    CPC分类号： B82Y20/00 ,  G02B6/12004 ,  H01S5/06251 ,  H01S5/06255 ,  H01S5/1057 ,  H01S5/3413 ,  H01S5/3414 ,  H01S5/4087 ,  H01S5/50 ,  H01S5/509

    摘要： A photodetector has a spatially varying absorption spectrum formed in a monolithic InGaAsP structure whose quantum well active structure has modified effective bandgap properties. A waveguide couples light to the quantum well active structure. The spatially varying absorption spectrum allows wavelength-division demultiplexing. The effective bandgap properties can be modified by rapid thermal annealing to cause the diffusion of defects from one or two InP defect layers into the quantum well active structure.

    摘要翻译： 光电探测器具有在单片InGaAsP结构中形成的空间变化的吸收光谱，其量子阱活性结构具有改进的有效带隙性质。 波导将光耦合到量子阱活性结构。 空间变化的吸收光谱允许波分解复用。 可以通过快速热退火来改变有效的带隙特性，使得缺陷从一个或两个InP缺陷层扩散到量子阱活性结构中。

    Method of manufacturing optical devices and related improvements
    87.
    发明授权
    Method of manufacturing optical devices and related improvements 失效
    制造光学器件的方法及相关改进

    公开(公告)号：US06632684B2

    公开(公告)日：2003-10-14

    申请号：US09788975

    申请日：2001-02-20

    申请人： John Haig Marsh ,  Craig James Hamilton ,  Stuart Duncan McDougall ,  Olek Peter Kowalski

    发明人： John Haig Marsh ,  Craig James Hamilton ,  Stuart Duncan McDougall ,  Olek Peter Kowalski

    IPC分类号： H01L2100

    CPC分类号： B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/3413 ,  H01S5/3414

    摘要： There is disclosed an improved method of manufacturing of an optical device (40), particularly semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and optical detectors. The invention provides a method of manufacturing optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well (QW) structure (30), the method including the step of: processing the device body portion (15) so as to create extended defects at least in a portion (53) of the device portion (5). Each extended defect is a structural defect comprising a plurality of adjacent “point” defects.

    摘要翻译： 公开了一种改进的光学器件的制造方法（ 40 ），特别是诸如激光二极管，光调制器，光放大器，光开关和光检测器之类的半导体光电器件 。 本发明提供了一种制造光学器件（ 40 > PDAT>）的器件本体部分（ 15 ）， （ 40 ）将包括量子阱（QW）结构（ 30 ），该方法包括步骤 处理设备主体部分（ 15 ），以至少在一部分（ 53 ）中创建扩展缺陷 的设备部分（ 5 ）。 每个扩展缺陷是包括多个相邻“点”缺陷的结构缺陷

    Semiconductor laser
    88.
    发明申请
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号：US20030021313A1

    公开(公告)日：2003-01-30

    申请号：US09916802

    申请日：2001-07-27

    发明人： John Haig Marsh ,  Craig James Hamilton

    IPC分类号： H01S005/00

    CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/1053 ,  H01S5/1064 ,  H01S5/1228 ,  H01S5/162 ,  H01S5/2036 ,  H01S5/3414

    摘要： There is disclosed an improved semiconductor laser device (10). Previous high power (greater than a few hundred milliwatts output) semiconductor lasers suffer from a number of problems such as poor beam quality and low brightness. The invention therefore provides a semiconductor laser device (10) including at least one portion which has been Quantum Well Intermixed (QWI) and means for providing gain profiling within an active portion of the device (10). In a preferred implementation the device (10) provides a Wide Optical Waveguide (WOW).

    摘要翻译： 公开了一种改进的半导体激光器件（10）。 以前的大功率（大于几百毫瓦输出）的半导体激光器受到诸如光束质量差和亮度低的诸多问题的困扰。 因此，本发明提供一种半导体激光装置（10），其包括已经是量子阱混合（QWI）的至少一部分和用于在装置（10）的有效部分内提供增益分布的装置。 在优选实施例中，设备（10）提供宽光波导（WOW）。

    Method of manufacturing optical devices and related improvements
    89.
    发明申请
    Method of manufacturing optical devices and related improvements 审中-公开
    制造光学器件的方法及相关改进

    公开(公告)号：US20020131668A1

    公开(公告)日：2002-09-19

    申请号：US09789240

    申请日：2001-02-20

    发明人： John Haig Marsh ,  Craig James Hamilton ,  Stewart Duncan McDougall ,  Olek Peter Kowalski

    IPC分类号： G02B006/13

    CPC分类号： B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/3413 ,  H01S5/3414

    摘要： There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of depositing a dielectric layer (51) on at least part of a surface of the device body portion (5) so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise nullpointnull defects.

    摘要翻译： 公开了一种制造光学器件的方法，例如半导体光电器件，例如激光二极管，光调制器，光放大器，光开关等。 还公开了包括这种装置的光电集成电路（OEIC）和光子集成电路（PIC）。 根据本发明，提供了一种制造光学装置（40）的方法，装置本体部分（15），其中将要制造装置（40）包括量子阱混合（QWI）结构（30）， 该方法包括在器件本体部分（5）的表面的至少一部分上沉积电介质层（51）以至少将结构缺陷引入到器件本体部分（5）的部分（53）中的步骤， 邻近电介质层（51）。 结构缺陷基本上包括“点”缺陷。