公开(公告)号：US08968866B2

公开(公告)日：2015-03-03

申请号：US13634209

申请日：2011-12-05

申请人： Chikako Kojima ,  Yoshio Okada ,  Hideaki Kanaoka ,  Hiroyuki Morimoto ,  Anongsack Paseuth ,  Erika Iwai

发明人： Chikako Kojima ,  Yoshio Okada ,  Hideaki Kanaoka ,  Hiroyuki Morimoto ,  Anongsack Paseuth ,  Erika Iwai

IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/40 ,  C23C28/04 ,  C23C30/00

CPC分类号： C23C16/34 ,  C23C16/403 ,  C23C16/45523 ,  C23C28/044 ,  C23C30/005 ,  Y10T407/27 ,  Y10T428/252

摘要： A surface-coated cutting tool excellent in wear resistance is provided. The surface-coated cutting tool of the present invention includes a base material and a coating formed on the base material. The coating includes an inner layer and an outer layer. The inner layer is a single layer or a multilayer stack constituted of two or more layers made of at least one element selected from the group consisting of group IVa elements, group Va elements, group VIa elements in the periodic table, Al, and Si, or a compound of at least one element selected from this group and at least one element selected from the group consisting of carbon, nitrogen, oxygen, and boron. The outer layer includes α-aluminum oxide as a main component and exhibits an equivalent peak intensity PR(024) of a (024) plane of x-ray diffraction of larger than 1.3.

摘要翻译： 提供耐磨性优异的表面涂层切削工具。 本发明的表面覆盖切削工具包括基材和形成在基材上的涂层。 涂层包括内层和外层。 内层是由选自元素周期表中的IVa族元素，Va族元素，VIa族元素，Al和Si中的至少一种元素的两层或更多层构成的单层或多层堆叠， 或选自该组的至少一种元素的化合物和选自碳，氮，氧和硼的至少一种元素。 外层包含α-氧化铝作为主要成分，并且表现出x射线衍射的（024）面的等效峰强度PR（024）大于1.3。

公开(公告)号：US08956704B2

公开(公告)日：2015-02-17

申请号：US13890346

申请日：2013-05-09

申请人： Novellus Systems, Inc.

发明人： Shankar Swaminathan ,  Hu Kang ,  Adrien LaVoie

IPC分类号： H05H1/24 ,  C23C16/52 ,  C23C16/04 ,  C23C16/455

CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/505

摘要： Methods for processing a substrate include a) arranging a substrate on a pedestal in a processing chamber; b) supplying precursor to the processing chamber; c) purging the processing chamber; d) performing radio frequency (RF) plasma activation; e) purging the processing chamber; and f) prior to purging the processing chamber in at least one of (c) or (e), setting a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at least one of (b) or (d) for a first predetermined period.

摘要翻译： 处理基板的方法包括：a）将基板布置在处理室中的基座上; b）将前体供应到处理室; c）清洗处理室; d）执行射频（RF）等离子体激活; e）清洗处理室; 以及f）在（c）或（e）中的至少一个中清洗处理室之前，在（b）中的至少一个中将处理室​​的真空压力设定为小于真空压力的第一预定压力， 或（d）第一预定时段。

公开(公告)号：US20140318457A1

公开(公告)日：2014-10-30

申请号：US14262334

申请日：2014-04-25

申请人： TOKYO ELECTRON LIMITED

发明人： Kota UMEZAWA ,  Yosuke WATANABE

IPC分类号： C23C16/44 ,  H01L21/02

CPC分类号： C23C16/4405 ,  C23C16/4408 ,  C23C16/45523

摘要： A film forming apparatus includes: a processing chamber configured to accommodate a substrate to be processed, the processing chamber performing a film forming process forming a compound semiconductor film; a heating device configured to heat the substrate to be processed; an exhaust device configured to exhaust an interior of the processing chamber, and a process gas supply mechanism configured to supply a gas to the processing chamber. In addition, a method of cleaning the film forming apparatus includes: performing a process of cleaning the interior of the processing chamber and a member; performing a process of cleaning lower portions of the interior of the processing chamber and the member, respectively; and performing a process of cleaning a gas supply channel, wherein the processes are performed by controlling the pressure and temperature inside the processing chamber and supplying a cleaning gas from the gas supply channel.

摘要翻译： 一种成膜装置包括：处理室，被配置为容纳待处理的基板，所述处理室执行形成化合物半导体膜的成膜工艺; 加热装置，其构造成加热待加工的基板; 排气装置，其构造成排出处理室的内部;以及处理气体供给机构，其构造成将气体供给到处理室。 另外，清洗成膜装置的方法包括：执行清洁处理室内部和部件的处理; 执行分别清洁处理室和构件的内部的下部的过程; 以及执行清洁气体供应通道的过程，其中通过控制处理室内部的压力和温度并从气体供应通道供应清洁气体来执行处理。

公开(公告)号：US20140295648A1

公开(公告)日：2014-10-02

申请号：US14227360

申请日：2014-03-27

申请人： Hitachi Kokusai Electric Inc.

发明人： Naoharu NAKAISO ,  Kazuhiro YUASA ,  Yuki KITAHARA

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/45523 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/32055

摘要： Disclosed is a method of manufacturing a semiconductor device including: a process of transferring a substrate into a processing chamber; a first gas supplying process of supplying a B atom-containing gas into the processing chamber; a first purging process of purging an inside of the processing chamber under an atmosphere of the B atom-containing gas supplied in the first gas supplying process; a second gas supplying process of supplying an Si atom-containing gas into the processing chamber to form a non-doped Si film on the substrate, after the first purging process; and a second purging process of purging the inside of the processing chamber under an atmosphere of the Si atom-containing gas.

摘要翻译： 公开了一种制造半导体器件的方法，包括：将衬底转移到处理室中的过程; 向所述处理室供给含有B原子的气体的第一气体供给工序; 在第一气体供给工序供给的含有B原子的气体的气氛下，吹扫处理室内部的第一吹扫工序; 第二气体供给工序，在第一次净化处理后，向该处理室供给含有Si原子的气体，在该基板上形成未掺杂的Si膜; 以及在含Si原子的气体的气氛下吹扫处理室内部的第二吹扫工序。

公开(公告)号：US20140287229A1

公开(公告)日：2014-09-25

申请号：US14221138

申请日：2014-03-20

申请人： Kennametal Inc.

发明人： Karl Heinz Wendt ,  Volkmar Sottke ,  Peter Rudolf Leicht ,  Yixiong Liu ,  Mark S. Greenfield ,  Hartmut Westphal

IPC分类号： C23C16/40

CPC分类号： C23C16/40 ,  C23C16/45523 ,  C23C30/005 ,  Y10T428/265

摘要： In one aspect, cutting tools are described having coatings adhered thereto which, in some embodiments, can demonstrate desirable wear resistance and increased cutting lifetimes. A coated cutting tool, in some embodiments, comprises a substrate and a coating adhered to the substrate, the coating comprising at least one Zr doped layer deposited by chemical vapor deposition comprising ZrAl2O3.

摘要翻译： 在一个方面，描述了具有粘附到其上的涂层的切割工具，在一些实施例中，可以显示出期望的耐磨性和增加的切割寿命。 在一些实施方案中，涂覆的切割工具包括基底和附着到基底的涂层，所述涂层包含通过包含ZrAl 2 O 3的化学气相沉积沉积的至少一个Zr掺杂层。

公开(公告)号：US20140287199A1

公开(公告)日：2014-09-25

申请号：US14220959

申请日：2014-03-20

申请人： Kennametal Inc.

发明人： Zhenyu Liu ,  Peter Rudolf Leicht ,  Rodrigo Alejandro Cooper ,  Mark S. Greenfield ,  Yixiong Liu

IPC分类号： B23C5/16 ,  C23C16/40

CPC分类号： C23C16/403 ,  C23C16/40 ,  C23C16/45523 ,  C23C28/042 ,  C23C28/044 ,  C23C28/048 ,  C23C28/42 ,  Y10T428/24802

摘要： In one aspect, cutting tools are described having coatings adhered thereto which, in some embodiments, can demonstrate desirable wear resistance and increased cutting lifetimes. A coated cutting tool, in some embodiments, comprises a substrate and a coating adhered to the substrate, the coating comprising a polycrystalline layer of TiZrAl2O3.

摘要翻译： 在一个方面，描述了具有粘附到其上的涂层的切割工具，在一些实施例中，可以显示出期望的耐磨性和增加的切割寿命。 在一些实施例中，涂覆的切割工具包括衬底和附着到衬底的涂层，该涂层包含TiZrAl 2 O 3的多晶层。

公开(公告)号：US20140274825A1

公开(公告)日：2014-09-18

申请号：US14214030

申请日：2014-03-14

申请人： SIO2 MEDICAL PRODUCTS, INC.

发明人： Joseph A. Jones ,  John T. Felts ,  James Troy Gresham ,  Brian Russell Lilly ,  Thomas E. Fisk

IPC分类号： A61L31/08 ,  A61M5/28 ,  A61M5/31 ,  C23C16/32 ,  A61L31/14

CPC分类号： C23C16/45523 ,  A61L31/088 ,  A61L31/14 ,  A61M5/28 ,  A61M5/3129 ,  A61M5/3134 ,  A61M5/3202 ,  A61M2005/3104 ,  A61M2005/3131 ,  C23C16/32 ,  C23C16/401 ,  C23C16/50 ,  C23C16/505 ,  C23C16/511 ,  C23C16/515

摘要： A method for coating a substrate surface such as a syringe part by PECVD is provided, the method comprising generating a plasma from a gaseous reactant comprising an organosilicon precursor and optionally an oxidizing gas by providing plasma-forming energy adjacent to the substrate, thus forming a coating on the substrate surface by plasma enhanced chemical vapor deposition (PECVD). The plasma-forming energy is applied in a first phase as a first pulse at a first energy level followed by further treatment in a second phase at a second energy level lower than the first energy level. The lubricity, hydrophobicity and/or barrier properties of the coating are set by setting the ratio of the O2 to the organosilicon precursor in the gaseous reactant, and/or by setting the electric power used for generating the plasma.

摘要翻译： 提供了一种通过PECVD涂覆诸如注射器部件的基底表面的方法，该方法包括通过在基底附近提供等离子体形成能量从包含有机硅前体和任选的氧化气体的气态反应器产生等离子体，由此形成 通过等离子体增强化学气相沉积（PECVD）在衬底表面上涂覆。 等离子体形成能量在第一相中作为第一脉冲施加在第一能级，随后在低于第一能级的第二能级在第二相进一步处理。 通过设定气体反应物中的O 2与有机硅前体的比例和/或通过设定用于产生等离子体的电力来设定涂层的润滑性，疏水性和/或阻隔性。

公开(公告)号：US20140251859A1

公开(公告)日：2014-09-11

申请号：US14205329

申请日：2014-03-11

申请人： SIO2 MEDICAL PRODUCTS, INC.

发明人： Christopher Weikart ,  Becky L. Clark ,  Adam Stevenson ,  John T. Felts

IPC分类号： A61J1/00

CPC分类号： A61J1/1468 ,  A61J1/00 ,  A61J1/035 ,  A61J1/05 ,  A61L31/04 ,  A61L31/08 ,  A61L31/088 ,  A61L31/143 ,  A61L31/16 ,  A61L2420/02 ,  A61L2420/08 ,  A61M5/3129 ,  A61M2005/3131 ,  A61M2205/0238 ,  B65D25/14 ,  C23C16/029 ,  C23C16/045 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/50

摘要： An article is described including an article surface and a coating set comprising a tie coating or layer of SiOxCy or Si(NH)xCy applied to the article surface, a barrier coating or layer of Six, and a pH protective layer of SiOxCy or Si(NH)xCy. The respective coatings or layers can be applied by chemical vapor deposition of a polysiloxane or polysilazane precursor in the presence of oxygen. Examples of such an article are a prefilled thermoplastic syringe or thermoplastic pharmaceutical vial with a coated interior portion containing a pharmaceutical preparation or other fluid with a pH of 4 to 8, alternatively 5 to 9. The barrier coating or layer prevents oxygen from penetrating into the thermoplastic syringe or vial, and the tie coating or layer and pH protective coating or layer together protect the barrier layer from the contents of the syringe or vial.

摘要翻译： 描述了一种制品，其包括物品表面和涂层，其包括施加到制品表面的SiO x C y或Si（NH）x C的连接涂层或层，Six的阻挡涂层或层，以及SiO xCy或Si的pH保护层 NH）xCy。 相应的涂层或层可以通过在氧气存在下通过化学气相沉积聚硅氧烷或聚硅氮烷前体来施加。 这种制品的实例是预填充的热塑性注射器或热塑性药物小瓶，其具有含有药物制剂或pH为4至8，或者5至9的其它流体的涂覆内部部分。阻隔涂层或层防止氧气渗入 热塑性注射器或小瓶，并且连接涂层或层和pH保护涂层或层一起保护阻挡层免于注射器或小瓶的内容物。

公开(公告)号：US20140199856A1

公开(公告)日：2014-07-17

申请号：US14150929

申请日：2014-01-09

申请人： Tokyo Electron Limited

发明人： Hitoshi KATO ,  Toshiyuki Nakatsubo ,  Shigehiro Miura

IPC分类号： H01L21/687 ,  H01L21/02

CPC分类号： H01L21/68764 ,  C23C16/45519 ,  C23C16/45523 ,  C23C16/48 ,  C23C16/56 ,  H01L21/68771

摘要： A method of depositing a film including carrying substrates in plural substrate mounting portions formed on a turntable in a peripheral direction by intermittently rotating the turntable, arranging the plural substrate mounting portions in a carry-in and carry-out area, and sequentially mounting the substrates on the substrate mounting portions, depositing a thin film on a surface of each substrate to laminate a reaction product of reaction gases, which mutually react, by repeating a cycle of rotating the turntable to revolve the substrates and alternately supplying the reaction gases onto surfaces of the substrates, reformulating the thin film by heating each substrate sequentially arranged in a heating area adjacent to the carry-in and carry-out area while intermittently rotating the turntable, and carrying each substrate out after sequentially arranging each substrate, the thin film on which is reformulated, in the carry-in and carry-out area by intermittently rotating the turntable.

摘要翻译： 一种沉积薄膜的方法，该方法包括：通过间歇地旋转所述转盘，在周向上形成在转台上的多个基板安装部分中承载基板，将多个基板安装部分布置在进入和移出区域中，并且顺序地安装基板 在基板安装部分上，在每个基板的表面上沉积薄膜以层叠反应气体的反应产物，所述反应气体相互反应，通过重复旋转转台以循环基板并将反应气体交替地供应到 基板，通过加热每个基板重新形成薄膜，每个基板顺序地布置在与进入和移出区域相邻的加热区域中，同时间歇地旋转转台，并且在顺序地布置每个基板之后将每个基板输出，其上形成有薄膜 通过间歇地旋转转盘，在进场和进场区域进行重新配置 。

公开(公告)号：US08778745B2

公开(公告)日：2014-07-15

申请号：US13159830

申请日：2011-06-14

申请人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi

发明人： Ryu Komatsu ,  Yasuhiro Jinbo ,  Hidekazu Miyairi

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/0262 ,  C23C16/0272 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78678 ,  H01L29/78696

摘要： A method for manufacturing a semiconductor device comprises the steps of forming a seed over the insulating film by introducing hydrogen and a deposition gas into a first treatment chamber under a first condition and forming a microcrystalline semiconductor film over the seed by introducing hydrogen and the deposition gas into a second treatment chamber under a second condition: a second flow rate of the deposition gas is periodically changed between a first value and a second value; and a second pressure in the second treatment chamber is higher than or equal to 1.0×102 Torr and lower than or equal to 1.0×103 Torr.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过在第一条件下将氢和沉积气体引入第一处理室中，在绝缘膜上形成晶种，并通过引入氢和沉积气体在晶种上形成微晶半导体膜 在第二条件下进入第二处理室：沉积气体的第二流量在第一值和第二值之间周期性地变化; 并且第二处理室中的第二压力高于或等于1.0×102乇并且小于或等于1.0×10 3乇。