Abstract:
A plasma display device includes a plasma display panel and a controller for receiving a digital image signal corresponding to an image to be displayed during a frame. The controller time divides a frame into a plurality of subfields, generates control signals for driving the respective subfields at an initialization period, an address period, and a sustain discharging period, and generates switching signals corresponding to the respective subfields. The plasma display device also includes a driver for generating different levels of voltages in accordance with the switching signals, and for providing display data with the generated voltages in accordance with the control signals to the plasma display panel. The plasma display device may also generate switching signals corresponding to the temperature sensed by a temperature sensor.
Abstract:
An antenna device for a portable terminal, which allows a whip antenna and helical antenna of a terminal to be retracted and withdrawn along an extension from the terminal, while not causing them to protrude out of the terminal. The antenna device provided with a whip antenna and helical antenna further includes an antenna housing disposed at a desired position in the main body, which permits the whip antenna to be retracted and withdrawn through the helical antenna, while causing the helical antenna to be withdrawn along an extension from the main body at the same time, and permits the helical antenna to be retracted, so that it can be inserted into the main body; and a housing coupling portion disposed in the main body for supporting the antenna housing.
Abstract:
Provided are methods and systems for monitoring a state of a plasma chamber. In the method, an optical characteristic of plasma generated in a plasma chamber including a window is measured in a predetermined measurement wavelength band. A process status index (PSI) is extracted from the measured optical characteristic. A state of the plasma chamber is evaluated by analyzing the extracted PSI. The optical characteristic of the plasma is measured in the predetermined measurement wavelength band in which a transmittance of light passing through the window is substantially independent of a wavelength of the light.
Abstract:
The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.
Abstract:
The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.
Abstract:
In a cleaning apparatus and a method of cleaning a chamber used in manufacturing a semiconductor device, a first plasma may be provided into a chamber to remove a first residue from an inner wall of the chamber where the first residue is attached. A second plasma may then be provided into the chamber to remove a second residue formed by the first plasma from an inside of the chamber where the second residue remains. The second residue formed by the first plasma used to clean the chamber may not pollute a semiconductor substrate located in the chamber.
Abstract:
An antenna apparatus for a portable terminal. The antenna apparatus includes a first helical antenna which is mounted on the portable terminal and takes the form of a coil and a second helical antenna which is wound the same axis as the first helical antenna and is surrounded by the first helical antenna. One end of the second helical antenna is connected to one end of the first helical antenna.
Abstract:
Disclosed herein is an antenna that can be manufactured in a smaller size and can achieve good wideband characteristics. The antenna includes a substantially semicircular antenna component installed in a monopole or dipole structure. Power is supplied to an end of the diameter of the antenna component.
Abstract:
A susceptor of an apparatus for manufacturing a semiconductor device includes a first part having a first lift pin hole, a second part combined with the first part and forming a space with the first part, wherein the second part has a second lift pin hole corresponding to the first lift pin hole, a heater disposed in the space, wherein the heater has a third lift pin hole corresponding to the first and second lift pin holes, a lift pin tube inserted in the first, second and third lift pin holes, wherein the lift pin tube is combined with the first and second part thereby preventing air from going into the space, and a lift pin passing through the lift pin tube.
Abstract:
A memory module includes a command/address (CA) register, memory devices, and a module resistor unit mounted on a circuit board. The centrally disposed CA register drive the memory devices one or more internal CA signal(s) to arrangements of memory devices using multiple CA transmission lines, wherein the multiple internal CA transmission lines are commonly terminated in the module resistor unit.