公开(公告)号：US20190271082A1

公开(公告)日：2019-09-05

申请号：US16418994

申请日：2019-05-21

Applicant: Applied Materials, Inc.

Inventor： Haitao WANG ,  Hamid NOORBAKHSH ,  Chunlei ZHANG ,  Sergio Fukuda SHOJI ,  Kartik RAMASWAMY ,  Roland SMITH ,  Brad L. MAYS

IPC: C23C16/455 ,  C23C16/44 ,  H01J37/32

Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.

公开(公告)号：US20190115246A1

公开(公告)日：2019-04-18

申请号：US15843697

申请日：2017-12-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Michael R. RICE ,  James David CARDUCCI

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: Apparatus for shielding a substrate support in a semiconductor processing chamber. In some embodiments, the apparatus includes: a substrate support body with a substrate processing surface, a feedthrough assembly for supporting the substrate support body in the semiconductor processing chamber, and a conductive member that provides a conductive path from a lowermost portion of the feedthrough assembly to the substrate processing surface of the substrate support body. The conductive member is disposed symmetrically about the substrate support.

公开(公告)号：US20180335393A1

公开(公告)日：2018-11-22

申请号：US16051365

申请日：2018-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonard TEDESCHI ,  Kartik RAMASWAMY

IPC: G01N21/94 ,  H01L21/66 ,  G01N21/95 ,  H01L21/67

CPC classification number: G01N21/94 ,  G01N21/9501 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/20

Abstract: Embodiments include devices and methods for detecting particles in a wafer processing tool. In an embodiment, a particle monitoring device having a wafer form factor includes several micro sensors capable of operating in all pressure regimes, e.g., under vacuum conditions. The particle monitoring device may include a clock to output a time value when a parameter of a micro sensor changes in response to receiving a particle within a chamber of the wafer processing tool. A location of the micro sensor or the time value may be used to determine a source of the particle. Other embodiments are also described and claimed.

公开(公告)号：US20160372307A1

公开(公告)日：2016-12-22

申请号：US14742142

申请日：2015-06-17

Applicant: Applied Materials, Inc.

Inventor： YANG YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

IPC: H01J37/32 ,  C23C14/48 ,  C23C16/458 ,  C23C16/505

CPC classification number: H01J37/32715 ,  H01J37/32165 ,  H01J37/32568 ,  H01J37/3299

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

Abstract translation: 本文所述的实施方案提供了能够调整等离子体室内的等离子体的衬底支撑组件。 在一个实施例中，提供了一种用于调谐腔室中的等离子体的方法。 该方法包括向衬底支撑组件中的第一电极提供第一射频功率和直流电力，在与第一电极不同的位置处向衬底支撑组件中的第二电极提供第二射频功率，监测参数 的第一和第二射频功率，并且基于所监视的参数来调整第一和第二射频功率中的一个或两个。

公开(公告)号：US20150097486A1

公开(公告)日：2015-04-09

申请号：US14505065

申请日：2014-10-02

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Kartik RAMASWAMY ,  Yogananda SARODE VISHWANATH ,  Alexander Charles MARCACCI

IPC: H01L21/67 ,  H01J7/46

CPC classification number: H01J7/46 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32596

Abstract: A showerhead assembly includes a front plate having a front surface, a back surface and a plurality of first through holes connecting the front surface and the back surface, a back plate having a front surface, a back surface and a plurality of second through holes connecting the front surface and the back surface, and an adhesive layer joining the back surface of the front plate and the front surface of the back plate. The plurality of first through holes are aligned with the plurality of second through holes, and the front plate and the back plate are formed from dissimilar materials.

Abstract translation: 一种喷头组件，包括具有前表面，后表面和连接前表面和后表面的多个第一通孔的前板，具有前表面，后表面和后表面的多个第二通孔， 前表面和后表面，以及将前板的后表面和后板的前表面接合的粘合剂层。 多个第一通孔与多个第二通孔对准，前板和后板由不同的材料形成。

公开(公告)号：US20250140541A1

公开(公告)日：2025-05-01

申请号：US18494319

申请日：2023-10-25

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  A N M Wasekul AZAD ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H01L21/66

Abstract: A method of processing a substrate. The method including delivering, by an RF generator, an RF signal to a processing volume of a processing chamber through an RF match including a configurable impedance altering element. Measuring in real-time, an electrical characteristic of the RF signal. Determining in real-time, a target electrical characteristic based upon a comparison between a calibrated electrical characteristic value and the measured electrical characteristic, in which the calibrated electrical characteristic value is selected to achieve at least one desired plasma processing parameter result. Adjusting in real-time, a setting of the configurable impedance altering element of the RF match to achieve the target electrical characteristic and maintaining, the target electrical characteristic by controlling the setting of the configurable impedance altering element of the RF match.

公开(公告)号：US20250006465A1

公开(公告)日：2025-01-02

申请号：US18214745

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Fernando SILVEIRA ,  Imad YOUSIF

IPC: H01J37/32

Abstract: Methods and apparatus for a point of use remote plasma source are provided. In embodiments, a remote plasma apparatus includes: an enclosure surrounding a cavity; a first conductor surrounding a first portion of the enclosure; a second conductor surrounding a second portion of the enclosure, wherein the first portion of the enclosure and the second portion of the enclosure overlap by an overlap amount, and wherein each of the first conductor and the second conductor are circumferentially discontinuous; a dielectric layer disposed between and separating the first conductor and the second conductor; a gas inlet configured to flow a gas into the cavity; and a gas outlet disposed in a bottom of the enclosure and configured to flow the gas out of the cavity.

公开(公告)号：US20240412947A1

公开(公告)日：2024-12-12

申请号：US18207526

申请日：2023-06-08

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32

Abstract: Some embodiments are directed to a tuning circuit. The tuning circuit generally includes: a first impedance coupled between a first terminal and a second terminal of the tuning circuit, wherein the first terminal is coupled to a generator and the second terminal is coupled to a load; a second impedance coupled between the first impedance of the tuning circuit and a reference potential node; and a signal path coupled to the first impedance or the second impedance, the signal path comprising an inductive element and a first switch coupled to the inductive element, wherein a control input of the first switch is coupled to a control input of the tuning circuit configured to receive a control signal associated with a pulsed voltage (PV) waveform.

公开(公告)号：US20240266152A1

公开(公告)日：2024-08-08

申请号：US18107487

申请日：2023-02-08

Applicant: Applied Materials, Inc.

Inventor： Michael Andrew STEARNS ,  Alok RANJAN ,  Kartik RAMASWAMY ,  Peng TIAN ,  Timothy Joseph FRANKLIN ,  Chris BLANK ,  Carlaton WONG

IPC: H01J37/32 ,  H01F27/28 ,  H01L21/3065

CPC classification number: H01J37/3266 ,  H01F27/28 ,  H01J37/3211 ,  H01L21/3065 ,  H01J2237/0264 ,  H01J2237/3341 ,  H01J2237/3343

Abstract: Embodiments of the present disclosure include an apparatus and methods for the plasma processing of a substrate. Some embodiments are directed to a plasma processing chamber. The plasma processing chamber generally includes a planar coil region comprising a concentric coil region comprising a first concentric coil and a second concentric coil, and a power supply circuit coupled to the first concentric coil and the second concentric coil. The first concentric coil may include a first coil with a diameter measured in a direction parallel to a first plane that is smaller than the diameter of a second coil included in the second concentric coil. The power supply circuit may be configured to bias the first concentric coil and the second concentric coil to adjust a generated magnetic field in a region of control of a plasma in the plasma processing chamber to control a plasma density of the plasma.

公开(公告)号：US20240249915A1

公开(公告)日：2024-07-25

申请号：US18628009

申请日：2024-04-05

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Yue GUO ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H03H7/01

CPC classification number: H01J37/32146 ,  H03H7/0115 ,  H01J2237/327

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.