公开(公告)号：US07887979B2

公开(公告)日：2011-02-15

申请号：US12132694

申请日：2008-06-04

Applicant: Young Dae Kim

Inventor： Young Dae Kim

IPC: G03F1/00

CPC classification number: G03F1/29 ,  G03F1/26

Abstract: Provided is a method for fabricating a rim type photomask. The method includes forming a light blocking pattern and a phase shift pattern on a substrate, forming a groove in the substrate by etching an exposed portion of the substrate using the light blocking pattern and the phase shift pattern as an etch mask, forming a mask layer filling the groove formed in the substrate, forming a mask pattern selectively exposing the groove formed in the substrate by patterning the mask layer, reducing a critical dimension (CD) of the mask pattern by irradiating ultraviolet (UV) rays onto the substrate, etching the light blocking pattern using the mask pattern having the reduced CD as an etch mask; forming a height difference by etching the phase shift pattern by a predetermined thickness from a top surface of the phase shift pattern that is exposed by the etching of the light blocking pattern; and forming a photomask including a rim region defined by the phase shift pattern having the height difference by removing the mask pattern.

Abstract translation: 提供一种制造边缘型光掩模的方法。 该方法包括在衬底上形成遮光图案和相移图案，通过使用遮光图案和相移图案蚀刻衬底的暴露部分作为蚀刻掩模，在衬底中形成凹槽，形成掩模层 填充形成在基板中的凹槽，通过对掩模层进行图案化而形成掩模图形，从而选择性地暴露形成在基板中的凹槽，通过在基板上照射紫外（UV）光线来减小掩模图案的临界尺寸（CD），蚀刻 使用具有减小的CD的掩模图案作为蚀刻掩模的遮光图案; 通过从通过蚀刻遮光图案曝光的相移图案的顶表面蚀刻相移图案预定厚度来形成高度差; 以及通过去除掩模图案，形成包括由具有高差的相移图案限定的边框区域的光掩模。

公开(公告)号：US20100227458A1

公开(公告)日：2010-09-09

申请号：US12714252

申请日：2010-02-26

Applicant: Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

Inventor： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

IPC: H01L21/20 ,  C23C16/48

CPC classification number: H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

Abstract translation: 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US20100119560A1

公开(公告)日：2010-05-13

申请号：US11682279

申请日：2007-03-05

Applicant: Young Dae Kim ,  Keun Ja Park ,  Jung Soo Kim ,  Ji Soo Kim

Inventor： Young Dae Kim ,  Keun Ja Park ,  Jung Soo Kim ,  Ji Soo Kim

IPC: A61K8/02 ,  A61K31/355 ,  A61Q19/00

CPC classification number: B82Y5/00 ,  A61K8/062 ,  A61K8/678 ,  A61K8/8147 ,  A61K8/90 ,  A61K9/1075 ,  A61K2800/21 ,  A61K2800/413 ,  A61Q19/00 ,  A61Q19/02 ,  A61Q19/08

Abstract: Embodiments of the present invention relate to nanoemulsions, the use thereof and preparation method thereof wherein the nanoemulsion contains a crosspolymer comprising at least one of a polyacrylic acid chain and a derivative of the polyacrylic acid chain; and polyoxypropylene-polyoxyethylene compound. According to one embodiment, the nanoemulsion forms a droplet with a diameter in the range of about 43 nm to about 96 nm.

Abstract translation: 本发明的实施方案涉及纳米乳剂，其用途及其制备方法，其中纳米乳剂含有包含聚丙烯酸链和聚丙烯酸链的衍生物中的至少一种的交联聚合物; 和聚氧丙烯 - 聚氧乙烯化合物。 根据一个实施方案，纳米乳液形成直径在约43nm至约96nm范围内的液滴。

公开(公告)号：US07688284B2

公开(公告)日：2010-03-30

申请号：US10954274

申请日：2004-10-01

Applicant: Young Dae Kim ,  Moon Shick Chung

Inventor： Young Dae Kim ,  Moon Shick Chung

IPC: G09G3/28

CPC classification number: G09G3/2037 ,  G09G3/292

Abstract: The present invention relates to a plasma display panel, and more particularly, to a method of driving a plasma display panel. According to an embodiment of the present invention, a method of driving a plasma display panel in which one frame comprises a plurality of sub-fields and which represent a gray level by making the sub-fields emitting light according to brightness weights allocated to the sub-fields, includes a step of implementing a specific gray level using a previous or next luminous pattern of the specific gray level in representing the specific gray level where none of the sub-fields of a one-step lower gray level are luminous. The method of driving a plasma display panel according to the present invention enables to prevent electric discharge failure and to stably display images on the PDP of high-density Xe.

Abstract translation: 等离子体显示面板技术领域本发明涉及等离子体显示面板，更具体地，涉及等离子体显示面板的驱动方法。 根据本发明的实施例，一种驱动等离子体显示面板的方法，其中一个帧包括多个子场，并且通过根据分配给子图像的亮度权重使子场发光来表示灰度级 字段包括使用特定灰度级的先前或下一个发光模式来表示特定灰度级的特定灰度级的步骤，其中一步低灰度级的子场不发光。 根据本发明的驱动等离子体显示面板的方法能够防止放电故障并且稳定地在高密度Xe的PDP上显示图像。

公开(公告)号：US20100048958A1

公开(公告)日：2010-02-25

申请号：US12308714

申请日：2007-06-14

Applicant: Seong-Hoon Kang ,  In-Kyu Park ,  Jong-Suh Park ,  Young-Dae Kim ,  Jong-Jyun Chae

Inventor： Seong-Hoon Kang ,  In-Kyu Park ,  Jong-Suh Park ,  Young-Dae Kim ,  Jong-Jyun Chae

IPC: C07C45/81

CPC classification number: C07C45/81 ,  C07C47/544

Abstract: The present invention relates to a method for preparing high-purity terephthalaldehyde which comprises re-crystallizing terephthalaldehyde crystals containing impurities, using an anti-solvent. Specifically, the present invention relates to a method for preparing terephthalaldehyde which comprises dissolving low-purity terephthalaldehyde prepared by a conventional method in dimethylsulfoxide and then re-crystallizing the solution, using water as an anti-solvent. The present invention is not only environment-friendly because it uses water only as an anti-solvent, but also economical because it may simply prepare high-purity terephthalaldehyde in a short time.

Abstract translation: 本发明涉及一种制备高纯度对苯二甲醛的方法，其包括使用反溶剂重结晶含有杂质的对苯二甲醛晶体。 具体地说，本发明涉及一种制备对苯二甲醛的方法，包括将通过常规方法制备的低纯度对苯二甲醛溶解在二甲基亚砜中，然后使用水作为反溶剂使溶液再结晶。 本发明不仅环保，因为它只用作反溶剂，而且经济，因为它可以在短时间内简单地制备高纯度对苯二醛。

公开(公告)号：US20100044188A1

公开(公告)日：2010-02-25

申请号：US12539078

申请日：2009-08-11

Applicant: Young Dae Kim

Inventor： Young Dae Kim

IPC: B65G37/00

CPC classification number: B65G1/04 ,  B62D65/18 ,  B65G37/02 ,  B65G2201/0261

Abstract: The present invention features, in part, a moving cart system that comprises a moving cart main line which is disposed along process portions and on which a moving cart is transpired along a positive length direction of the moving cart main line, a moving cart return line which is disposed parallel with the moving cart main line and on which the moving cart is transpired along a negative length direction of the moving cart return line, traverses which are disposed for connecting a front and a rear of the moving cart main line and the moving cart return line, and a plurality of storages which are disposed perpendicular to the moving cart return line in predetermined intervals along a length direction of the moving cart return line for storing the moving cart, wherein the moving cart moves along the plurality of storages.

Abstract translation: 本发明的部分特征在于一种移动推车系统，其包括沿着处理部分设置的移动推车主线，并且移动推车沿着移动推车主线的正长度方向散发，移动推车返回线 其与移动推车主线平行设置，并且移动的推车沿着移动推车返回线的负长度方向散发，横向设置成用于连接移动推车主线的前后，并且移动 推车返回线和沿着用于存放移动车的移动车返回线的长度方向以预定间隔垂直于移动车返回线设置的多个存储器，其中移动的车沿着多个存储器移动。

公开(公告)号：US20090140385A1

公开(公告)日：2009-06-04

申请号：US12288880

申请日：2008-10-24

Applicant: Eun-A Lee ,  Ho-Jin Cho ,  Young-Dae Kim ,  Jun-Soo Chang ,  Su-Jin Chae ,  Hai-Won Kim

Inventor： Eun-A Lee ,  Ho-Jin Cho ,  Young-Dae Kim ,  Jun-Soo Chang ,  Su-Jin Chae ,  Hai-Won Kim

IPC: H01L29/00

CPC classification number: B82Y10/00 ,  H01G4/005 ,  H01G4/33 ,  H01L23/5223 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/84 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A capacitor with nanotubes and a method for fabricating the same are provided. The capacitor includes: a lower electrode including a patterned conductive layer and a plurality of nanotubes formed on the patterned conductive layer in the shape of whiskers without using a catalytic layer; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer. The method includes the steps of: forming a conductive layer for forming a lower electrode; forming a nanotube array including a plurality of nanotubes formed on the conductive layer without using a catalytic layer; forming a dielectric layer on the nanotube array; and forming an upper electrode on the dielectric layer.

Abstract translation: 提供了一种具有纳米管的电容器及其制造方法。 所述电容器包括：下电极，其包括图案化导电层和形成在所述图案化导电层上的多个纳米管，所述多个纳米管不需要使用催化剂层; 形成在下电极上的电介质层; 以及形成在电介质层上的上电极。 该方法包括以下步骤：形成用于形成下电极的导电层; 在不使用催化剂层的情况下形成包括形成在所述导电层上的多个纳米管的纳米管阵列; 在纳米管阵列上形成介电层; 以及在所述电介质层上形成上电极。

公开(公告)号：US20090111034A1

公开(公告)日：2009-04-30

申请号：US12132694

申请日：2008-06-04

Applicant: Young Dae Kim

Inventor： Young Dae Kim

IPC: G03F1/14

CPC classification number: G03F1/29 ,  G03F1/26

Abstract: Provided is a method for fabricating a rim type photomask. The method includes forming a light blocking pattern and a phase shift pattern on a substrate, forming a groove in the substrate by etching an exposed portion of the substrate using the light blocking pattern and the phase shift pattern as an etch mask, forming a mask layer filling the groove formed in the substrate, forming a mask pattern selectively exposing the groove formed in the substrate by patterning the mask layer, reducing a critical dimension (CD) of the mask pattern by irradiating ultraviolet (UV) rays onto the substrate, etching the light blocking pattern using the mask pattern having the reduced CD as an etch mask; forming a height difference by etching the phase shift pattern by a predetermined thickness from a top surface of the phase shift pattern that is exposed by the etching of the light blocking pattern; and forming a photomask including a rim region defined by the phase shift pattern having the height difference by removing the mask pattern.

Abstract translation: 提供一种制造边缘型光掩模的方法。 该方法包括在衬底上形成遮光图案和相移图案，通过使用遮光图案和相移图案蚀刻衬底的暴露部分作为蚀刻掩模，在衬底中形成凹槽，形成掩模层 填充形成在基板中的凹槽，通过对掩模层进行图案化而形成掩模图案，从而选择性地暴露形成在基板中的凹槽，通过在基板上照射紫外（UV）光线来减小掩模图案的临界尺寸（CD），蚀刻 使用具有减小的CD的掩模图案作为蚀刻掩模的遮光图案; 通过从通过蚀刻遮光图案曝光的相移图案的顶表面蚀刻相移图案预定厚度来形成高度差; 以及通过去除掩模图案，形成包括由具有高差的相移图案限定的边框区域的光掩模。

公开(公告)号：US20090061587A1

公开(公告)日：2009-03-05

申请号：US12163937

申请日：2008-06-27

Applicant: Kwan-Woo Do ,  Jae-Sung Roh ,  Kee-Jeung Lee ,  Deok-Sin Kil ,  Young-Dae Kim ,  Jin-Hyock Kim ,  Kyung-Woong Park

Inventor： Kwan-Woo Do ,  Jae-Sung Roh ,  Kee-Jeung Lee ,  Deok-Sin Kil ,  Young-Dae Kim ,  Jin-Hyock Kim ,  Kyung-Woong Park

IPC: H01L21/02

CPC classification number: H01L28/65 ,  H01L28/75

Abstract: A method for fabricating a capacitor includes providing a substrate having a capacitor region is employed, forming a first Ru1-xOx layer over the substrate, forming a Ru layer for a lower electrode over the first Ru1-xOx layer and deoxidizing the first Ru1-xOx layer, forming a dielectric layer over the Ru layer for a lower electrode, and forming a conductive layer for an upper electrode over the dielectric layer, wherein the first Ru1-xOx layer contains oxygen in an amount less than an oxygen amount of a RuO2 layer.

Abstract translation: 一种制造电容器的方法包括提供具有电容器区域的衬底，在衬底上形成第一Ru1-xOx层，在第一Ru1-xOx层上形成用于下电极的Ru层，并使第一Ru1-xOx层脱氧 在用于下电极的Ru层上形成电介质层，在电介质层上形成用于上电极的导电层，其中第一Ru1-xOx层含有的量小于RuO 2层的氧量的氧 。

公开(公告)号：US20090004808A1

公开(公告)日：2009-01-01

申请号：US11965698

申请日：2007-12-27

Applicant: Kee-Jeung LEE ,  Jae-Sung Roh ,  Seung-Jin Yeom ,  Han-Sang Song ,  Deok-Sin Kil ,  Young-Dae Kim ,  Jin-Hyock Kim ,  Kwan-Woo Do

Inventor： Kee-Jeung LEE ,  Jae-Sung Roh ,  Seung-Jin Yeom ,  Han-Sang Song ,  Deok-Sin Kil ,  Young-Dae Kim ,  Jin-Hyock Kim ,  Kwan-Woo Do

IPC: H01L21/20

CPC classification number: H01L28/90 ,  H01L27/10852

Abstract: A method for fabricating a capacitor includes forming a sacrificial layer having a plurality of trenches on an upper portion of a substrate, forming storage nodes in the trenches, exposing upper portions of the storage nodes by removing a portion of the sacrificial layer, forming supporters to support the exposed upper portions of the storage nodes, removing the sacrificial layer under the supporters, and removing the supporters.

Abstract translation: 制造电容器的方法包括在衬底的上部形成具有多个沟槽的牺牲层，在沟槽中形成存储节点，通过去除牺牲层的一部分来暴露存储节点的上部，形成支持者 支撑存储节点的暴露的上部，移除支持者下面的牺牲层，并移除支持者。