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    Light emitting semiconductor device with GaInNAs active layers and GaAs spacer layers
    83.
    发明授权
    Light emitting semiconductor device with GaInNAs active layers and GaAs spacer layers 有权
    具有GaInNA有源层和GaAs间隔层的发光半导体器件

    公开(公告)号：US06815731B2

    公开(公告)日：2004-11-09

    申请号：US10401958

    申请日：2003-03-31

    申请人： Shunichi Sato

    发明人： Shunichi Sato

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/06 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3235 ,  H01S5/32366

    摘要： A light emitting semiconductor device, which includes a Ga0.9In0.1As0.97 active layer disposed between lower n-Ga0.5In0.5P and upper p-Ga0.5In0.5P cladding layers, being provided with lower and upper GaAs spacing layers each intermediate the active layer and the cladding layer. The active layer is approximately lattice-matched to a GaAs substrate and has a thickness of about 0.1 &mgr;m with a photoluminescence peak wavelength of approximately 1.3 &mgr;m, and the GaAs spacing layers each have a thickness of about 2 nm.

    摘要翻译： 包括设置在下部n-Ga0.5In0.5P和上部p-Ga0.5In0.5P包层之间的Ga0.9In0.1As0.97有源层的发光半导体器件分别设置有下部和上部GaAs间隔层 在有源层和包层之间。 有源层与GaAs衬底大致晶格匹配，并且具有约0.1μm的厚度，光致发光峰值波长约1.3μm，并且GaAs间隔层各自具有约2nm的厚度。

    Laser diode module
    85.
    发明授权
    Laser diode module 失效
    激光二极管模块

    公开(公告)号：US06490303B1

    公开(公告)日：2002-12-03

    申请号：US08733628

    申请日：1996-10-17

    申请人： Manabu Komiyama ,  Shunichi Sato ,  Noboru Sonetsuji ,  Tetsuo Ishizaka ,  Saeko Yokoi

    发明人： Manabu Komiyama ,  Shunichi Sato ,  Noboru Sonetsuji ,  Tetsuo Ishizaka ,  Saeko Yokoi

    IPC分类号： G02B600

    CPC分类号： H01S5/02415 ,  H01L2224/48091 ,  H01S5/0014 ,  H01S5/005 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/02438 ,  H01S5/042 ,  H01S5/06216 ,  H01S5/0683 ,  H01L2924/00014

    摘要： Disclosed herein is a laser diode module having a thermoelectric cooling element, a laser diode, and a thermistor in a housing. The thermoelectric cooling element has a first surface and a second surface between which heat exchange is performed. The first surface is in close contact with an inner surface of the housing. A base is provided on the second surface in close contact therewith. A laser carrier and a thermistor carrier are provided on the base in close contact therewith. The laser diode and the thermistor are provided on the laser carrier and the thermistor carrier in close contact therewith, respectively. A portion of the base in the vicinity of the laser carrier is thermally connected to the housing by a metal plate, for example, thereby allowing high-precision temperature control of the laser diode.

    摘要翻译： 这里公开了一种在壳体中具有热电冷却元件，激光二极管和热敏电阻的激光二极管模块。 热电冷却元件具有第一表面和在其之间执行热交换的第二表面。 第一表面与壳体的内表面紧密接触。 基部与第二表面紧密接触地设置。 激光载体和热敏电阻载体与底座紧密接触地设置在基座上。 激光二极管和热敏电阻分别设置在激光载体和热敏电阻载体上。 激光载体附近的基部的一部分例如通过金属板热连接到壳体，从而允许激光二极管的高精度温度控制。

    Semiconductor light emitting devices
    86.
    发明授权
    Semiconductor light emitting devices 失效
    半导体发光器件

    公开(公告)号：US06452215B1

    公开(公告)日：2002-09-17

    申请号：US09587227

    申请日：2000-06-02

    申请人： Shunichi Sato

    发明人： Shunichi Sato

    IPC分类号： H01L2715

    CPC分类号： H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/3206 ,  H01S5/32325

    摘要： Nitrogen-containing III-V alloy semiconductor materials have both a conduction band offset &Dgr;Ec and a valence band offset &Dgr;Ev large enough for the practical applications to light emitting devices. The semiconductor materials are capable of providing laser diodes, having excellent temperature characteristics with emission wavelengths in the red spectral region and of 600 nm or smaller, and high brightness light emitting diodes with emission wavelengths in the visible spectral region. The light emitting device is fabricated on an n-GaAs substrate, which has the direction normal to the substrate surface is misoriented by 15° from the direction normal to the (100) plane toward the [011] direction. On the substrate, there disposed by MOCVD, for example, are an n-GaAs buffer layer, an n-(Al0.7Ga0.3)0.51In0.49P cladding layer, an (Al0.2Ga0.8)0.49In0.51N0.01P0.99 active layer, a p-(Al0.7Ga0.3)0.51In0.49P cladding layer, and a p-GaAs contact layer.

    摘要翻译： 含氮III-V合金半导体材料具有对于发光器件的实际应用足够大的导带偏移量DELTAEc和价带偏移量DELTAEv。 半导体材料能够提供具有优异的温度特性的激光二极管，具有红色光谱区域中的发射波长和600nm或更小的发射波长以及具有可见光谱区域中的发射波长的高亮度发光二极管。 发光器件制造在n-GaAs衬底上，其具有与衬底表面垂直的方向从垂直于（100）面朝向[011]方向的方向偏离15°。 例如，通过MOCVD设置的衬底是n-GaAs缓冲层，n-（Al0.7Ga0.3）0.51In0.49P包层，（Al0.2Ga0.8）0.49In0.51N0。 01P0.99有源层，p-（Al0.7Ga0.3）0.51In0.49P包层和p-GaAs接触层。

    Layered semiconductor structures and light emitting devices including the structure
    87.
    发明授权
    Layered semiconductor structures and light emitting devices including the structure 有权
    层状半导体结构和包括该结构的发光器件

    公开(公告)号：US06348698B1

    公开(公告)日：2002-02-19

    申请号：US09315829

    申请日：1999-05-21

    申请人： Shunichi Sato

    发明人： Shunichi Sato

    IPC分类号： H01L29205

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/32 ,  H01S5/32366

    摘要： A light emitting device is provided, which comprises a III-V semiconductor alloy layered structure as an active layer thereof, including N and at least one other group-V element, and at least one group-III element. The light emitting device is in use for red wavelength laser diodes having excellent temperature characteristics, visible wavelength laser diodes which may achieve emissions shorter wavelengths than 600 nm, visible region light emitting diodes having a high intensity, laser diodes for optical communication having excellent temperature characteristics, and similar light emitting devices. The III-V semiconductor alloy layered structure is provided to be used as an active layer for forming the light emitting device, which comprises first and second monatomic layers. The first monatomic layer includes a III-V semiconductor alloy containing N, at least one other group-V element, and at least one group-III element; and the second monatomic layer includes a III-V semiconductor alloy containing no N and at least one group-V element excepting N, and at least one group-III element. Through the deposition of the first and second monatomic layers in a predetermined order, the III-V semiconductor alloy structure is formed as a superlattice structure having a deduced average composition.

    摘要翻译： 提供一种发光器件，其包括III-V族半导体合金层状结构作为其有源层，包括N和至少一个其它V族元素，以及至少一种III族元素。 发光器件用于具有优异温度特性的红色波长激光二极管，可实现发射短于600nm的发射波长的可见波长激光二极管，具有高强度的可见区域发光二极管，用于具有优异温度特性的光通信用激光二极管 ，和类似的发光器件。 提供III-V族半导体合金层状结构用作形成发光器件的有源层，其包括第一和第二单原子层。 第一单原子层包括含有N，至少一个其它V族元素和至少一个III族元素的III-V族半导体合金; 并且第二单原子层包括不含N和至少一个除了V之外的V族元素的III-V族半导体合金和至少一种III族元素。 通过以预定顺序沉积第一和第二单原子层，III-V族半导体合金结构形成为具有推导的平均组成的超晶格结构。

    Optical semiconductor device having a multilayer reflection structure
    88.
    发明授权
    Optical semiconductor device having a multilayer reflection structure 有权
    具有多层反射结构的光学半导体器件

    公开(公告)号：US06300650B1

    公开(公告)日：2001-10-09

    申请号：US09263104

    申请日：1999-03-05

    申请人： Shunichi Sato

    发明人： Shunichi Sato

    IPC分类号： H01L310232

    CPC分类号： G02B5/0833 ,  G02B1/113 ,  H01S5/18341 ,  H01S5/32308 ,  H01S5/32366 ,  H01S2304/04

    摘要： A multilayer mirror includes a multilayer reflection structure formed of an alternate repetition of a first epitaxial layer of a first refractive index and a second epitaxial layer of a second refractive index larger than the first refractive index, wherein the second epitaxial layer includes a group III-V mixed crystal containing N as a group V element.

    摘要翻译： 多层反射镜包括由第一折射率的第一外延层和第二折射率大于第一折射率的第二外延层的交替重复形成的多层反射结构，其中第二外延层包括III- V混合晶体，其含有N作为V族元素。

    Three-dimensional image projecting device
    90.
    发明授权
    Three-dimensional image projecting device 失效
    三维图像投影设备

    公开(公告)号：US6062693A

    公开(公告)日：2000-05-16

    申请号：US859563

    申请日：1997-05-20

    申请人： Shunichi Sato

    发明人： Shunichi Sato

    IPC分类号： G02B5/32 ,  G02B27/22 ,  G03B21/00 ,  G03B35/18 ,  G03H1/04 ,  G03H1/22 ,  H04N13/04 ,  G03B21/14

    CPC分类号： G02B5/1876 ,  G02B27/0103 ,  G02B5/32 ,  G02B2027/0134

    摘要： The invention is intended to provide a three-dimensional image projecting device which is capable of presenting a three-dimensional image observable in a wide visual field without tiring eyes of an observer. A three-dimensional image displayed by three-dimensional image displaying means is projected by a reflection type projecting hologram lens and reflection type hologram acting as optical transferring means and a reflection type hologram lens to produce respective three-dimensional images. These three-dimensional images are formed at the same magnification in the same space to form a continuous image area. For this purpose, reflection type hologram lenses are disposed on the periphery of a circle. Respective three-dimensional images is reflected by the reflection type hologram acting as the optical transferring means, thus an enlarged three-dimensional image can be seen over the respective visual fields.

    摘要翻译： 本发明旨在提供一种三维图像投影装置，其能够呈现在宽视野中可观察到的三维图像，而不会使观察者的眼睛疲劳。 由三维图像显示装置显示的三维图像由反射型投影全息透镜和作为光转印装置的反射型全息图和反射型全息透镜投射，以产生各自的三维图像。 这些三维图像在相同的空间中以相同的倍率形成，以形成连续的图像区域。 为此，反射型全息透镜设置在圆周的周围。 相应的三维图像由作为光学传递装置的反射型全息图反射，因此可以在各个视野上看到放大的三维图像。