公开(公告)号：US06500487B1

公开(公告)日：2002-12-31

申请号：US09420107

申请日：1999-10-18

申请人： Mark Holst ,  Rebecca Faller ,  Glenn Tom ,  Jose Arno ,  Ray Dubois

发明人： Mark Holst ,  Rebecca Faller ,  Glenn Tom ,  Jose Arno ,  Ray Dubois

IPC分类号： C23C1640

CPC分类号： B01D53/02 ,  B01D53/04 ,  B01D53/64 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/108 ,  B01D2258/0216 ,  C23C16/409 ,  C23C16/4412

摘要： Apparatus and method for abatement of effluent from multi-component metal oxides deposited by CVD processes using metal source reagent liquid solutions which comprise at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex and a suitable solvent medium for that metal coordination complex e.g., a metalorganic chemical vapor deposition (MOCVD) process for forming barium strontium titanate (BST) thin films on substrates. The effluent is sorptively treated to remove precursor species and MOCVD process by-products from the effluent. An endpoint detector such as a quartz microbalance detector may be employed to detect incipient breakthrough conditions in the sorptive treatment unit.

摘要翻译： 用于使用金属源试剂液体溶液沉积的多组分金属氧化物排出的流出物的装置和方法，所述金属源试剂液体溶液包含至少一种金属配位络合物，所述金属配位络合物包括与稳定络合物中的至少一个配位体配位结合的金属， 用于该金属配位络合物的溶剂介质，例如用于在基底上形成钛酸钡锶（BST）薄膜的金属有机化学气相沉积（MOCVD）工艺。 废水被吸附处理以从流出物中除去前体物质和MOCVD处理副产物。 可以使用诸如石英微量天平检测器的端点检测器来检测吸附处理单元中的初始突破条件。

公开(公告)号：US06485554B1

公开(公告)日：2002-11-26

申请号：US09184510

申请日：1998-11-02

申请人： Atsushi Itsuki ,  Taiji Tachibana ,  Katsumi Ogi

发明人： Atsushi Itsuki ,  Taiji Tachibana ,  Katsumi Ogi

IPC分类号： C23C1640

CPC分类号： C23C16/045 ,  C23C16/409

摘要： The present invention provides a solution suitable for forming a composite oxide type dielectric thin film containing at least one organometallic compound dissolved in at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, and acetoacetic esters, or dissolved in a solvent mixture comprising at least one solvent selected from the group consisting of cyclic and acyclic saturated hydrocarbons, and at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, acetoacetic esters, and unsubstituted or alkyl-substituted pyridine. These solutions can be used in a metal oxide chemical deposition method (a MOCVD method, a chemical vapor deposition method using an organometallic compound) to prepare composite oxide (for example, barium strontium titanate) type dielectric thin films on substrates.

摘要翻译： 本发明提供了一种适用于形成复合氧化物型电介质薄膜的溶液，所述复合氧化物型电介质薄膜含有至少一种溶解在选自环状或非环状二醚，烷基取代环状单醚，单 - 或二 - 支链烷基单醚，烷氧基醇，二醇和乙酰乙酸酯，或溶解在包含至少一种选自环状和非环状饱和烃的溶剂的溶剂混合物中，和至少一种选自环状或非环状的溶剂 二醚，烷基取代的环状单醚，单或二支链烷基单醚，烷氧基醇，二醇，乙酰乙酸酯和未取代的或烷基取代的吡啶。 这些溶液可以用于金属氧化物化学沉积法（MOCVD法，使用有机金属化合物的化学气相沉积法）中以在基底上制备复合氧化物（例如钛酸钡锶）​​型电介质薄膜。

公开(公告)号：US06479098B1

公开(公告)日：2002-11-12

申请号：US09747135

申请日：2000-12-26

申请人： Ming-Hwa Yoo ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

发明人： Ming-Hwa Yoo ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

IPC分类号： C23C1640

CPC分类号： H01J37/32477 ,  C23C16/4404 ,  Y10T428/2495 ,  Y10T428/265

摘要： A method for reducing contaminants in a processing chamber 10 having chamber plasma processing region components comprising the following steps. The chamber plasma processing region components are cleaned. The chamber is then seasoned as follows. A first USG layer is formed over the chamber plasma processing region components. An FSG layer is formed over the first USG layer. A second USG layer is formed over the FSG layer. Wherein the USG, FSG, and second USG layers comprise a UFU season film. A UFU season film coating the chamber plasma processing region components of a processing chamber comprises: an inner USG layer over the chamber plasma processing region components; an FSG layer over the inner USG layer; and an outer USG layer over the FSG layer.

摘要翻译： 一种用于减少具有室等离子体处理区域部件的处理室10中的污染物的方法，包括以下步骤。 腔室等离子体处理区域部件被清洁。 然后如下调节室。 在室等离子体处理区域部件上形成第一USG层。 在第一USG层上形成FSG层。 在FSG层上形成第二个USG层。 其中USG，FSG和第二USG层包括UFU季电影。 UFU季涂膜处理室的室等离子体处理区域部件包括：室上的内部USG层等离子体处理区域部件; 内部USG层上的FSG层; 以及FSG层上的外部USG层。

公开(公告)号：US06475928B1

公开(公告)日：2002-11-05

申请号：US09115706

申请日：1998-07-15

申请人： Marc Berenguer ,  Roderick Devine

发明人： Marc Berenguer ,  Roderick Devine

IPC分类号： C23C1640

CPC分类号： H01L28/40 ,  C23C4/02 ,  C23C4/134 ,  C23C16/02 ,  C23C16/405 ,  C23C24/04 ,  C23C28/042

摘要： The process comprises the following steps: a) pretreatment of a surface of the substrate by means of a cold gas plasma at low or medium pressure in order to clean the said surface; b) growth, from the said cleaned surface of the substrate, of a nitride barrier layer by means of a cold gas plasma made up of an N2/H2 mixture at low or medium pressure; and c) deposition, on the nitride barrier layer, of a Ta2O5 dielectric layer by chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD).

摘要翻译： 该方法包括以下步骤：a）通过在低或中等压力下的冷气体等离子体预处理衬底的表面，以便清洁所述表面; b）从衬底的所述清洁表面生长， 通过在低或中压下由N 2 / H 2混合物构成的冷气体等离子体的氮化物阻挡层; 通过化学气相沉积（CVD）或等离子体增强化学气相沉积（PECVD）沉积在Ta 2 O 5介电层的氮化物阻挡层上。

公开(公告)号：US06413577B1

公开(公告)日：2002-07-02

申请号：US08899844

申请日：1997-07-24

申请人： Surjit S. Chadha ,  Robert T. Rasmussen

发明人： Surjit S. Chadha ,  Robert T. Rasmussen

IPC分类号： C23C1640

CPC分类号： H01J3/022 ,  H01J29/863 ,  H01J2329/00

摘要： A process for operating a field emission display (FED) is disclosed. The FED has a faceplate and a baseplate, and a layer of praseodymium-manganese oxide disposed between the faceplate and baseplate. The layer absorbs photons during operation of the FED, and thus provides for improved performance of the FED because, for example, stray photons do not impact the underlying circuitry of the FED.

摘要翻译： 公开了一种用于操作场发射显示（FED）的处理。 FED具有面板和底板，并且设置在面板和底板之间的一层镨锰氧化物。 该层在FED的操作期间吸收光子，因此提供了FED的改善的性能，因为例如杂散光子不影响FED的底层电路。

公开(公告)号：US06361825B1

公开(公告)日：2002-03-26

申请号：US08699960

申请日：1996-08-20

申请人： Howard R. Beratan ,  Charles M. Hanson

发明人： Howard R. Beratan ,  Charles M. Hanson

IPC分类号： C23C1640

CPC分类号： G01J5/20 ,  G01J5/34

摘要： A pyroelectric detector system, the pyroelectric detector element therefor and the method of making the detector element which comprises an integrated circuit (1) and a pyroelectric detector element (7) coupled to the integrated circuit and thermally isolated from the integrated circuit. The element includes a lead-containing pyroelectric layer having a pair of opposing surfaces and having a thickness to provide a resonant cavity for radiations in a predetermined frequency range. A bottom electrode (5) opaque to radiations in the predetermined frequency range is secured to one of the pair of opposing surfaces and a top electrode (9, 11) is secured to the other of the pair of opposing surfaces which is semi-transparent to radiations in the predetermined frequency range. The top electrode is taken from the group consisting of platinum and nichrome. The lead-containing pyroelectric layer is preferably lead titanate.

摘要翻译： 一种热释电检测器系统，其热电检测器元件及其制造方法，其包括集成电路（1）和与该集成电路耦合并与该集成电路热隔离的热电检测元件（7）。 元件包括含铅的热电层，其具有一对相对的表面，并且具有厚度以提供用于在预定频率范围内的辐射的谐振腔。 在预定频率范围内对辐射不透明的底部电极（5）固定到一对相对表面中的一个，并且顶部电极（9,11）固定到一对相对表面中的另一个，其是半透明的 在预定频率范围内的辐射。顶部电极取自铂和镍铬合金组。 含铅的热电层优选为钛酸铅。

公开(公告)号：US06316055B1

公开(公告)日：2001-11-13

申请号：US09302938

申请日：1999-04-30

申请人： Seshu B. Desu ,  John J. Senkevich

发明人： Seshu B. Desu ,  John J. Senkevich

IPC分类号： C23C1640

CPC分类号： C23C16/403 ,  C23C16/402 ,  C23C16/405 ,  C23C16/407 ,  C23C16/452 ,  Y10T428/31667

摘要： This invention discloses methods for the deposition of SiO2 and other oxide dielectric materials using a near room temperature thermal chemical vapor deposition process. The films have chemical, physical, optical, and electrical properties similar to or better than those of oxide films deposited using conventional, high temperature thermal CVD methods. The films of the invention are useful in the manufacture of semiconductor devices of sub-micron feature size and for food packaging.

摘要翻译： 本发明公开了使用近室温热化学气相沉积工艺沉积SiO 2和其它氧化物介电材料的方法。 这些膜具有与使用常规的高温热CVD方法沉积的氧化膜相似或更好的化学，物理，光学和电学性质。 本发明的膜可用于制造亚微米特征尺寸和食品包装的半导体器件。

公开(公告)号：US06297175B1

公开(公告)日：2001-10-02

申请号：US09548491

申请日：2000-04-13

申请人： Ravi Iyer

发明人： Ravi Iyer

IPC分类号： C23C1640

CPC分类号： H01L21/02164 ,  C03C17/02 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76837

摘要： A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 is disclosed. The entire method, which can be performed in a single cluster tool and even in a single chamber, begins by placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber. A “clean” silicate glass base layer that is substantially free of carbon particle impurities on an upper surface is then formed on the wafer surface in one of two ways. The first employs plasma-enhanced chemical vapor deposition using TEOS and diatomic oxygen gases as precursors to first deposit a “dirty” silicate glass base layer having carbon particle impurities imbedded on an upper surface thereof. The dirty base layer is then transformed to a clean base layer by subjecting it to a plasma treatment, which involves flowing a mixture of a diamagnetic oxygen-containing oxidant, such as ozone or hydrogen peroxide, and diatomic oxygen gas into the chamber and striking an RF plasma at a power density setting of about 0.25 to 3.0 watts/cm2 for a period of from 30-300 seconds. It is hypothesized that the plasma treatment burns off the impurities, which are present in the PECVD-deposited base layer and which may be responsible for certain hydrophilic surface effects which repel TEOS molecules. The plasma treatment also creates a high degree of surface uniformity on the PECVD-deposited glass layer. The second way of forming a clean silicate glass base layer involves flowing hydrogen peroxide vapor and at least one gaseous compound selected from the group consisting of silane and disilane into the deposition chamber. Following the formation of the clean base layer, a subsequent glass layer is deposited over the PECVD-deposited glass layer in the same chamber or cluster tool using chemical vapor deposition and TEOS and ozone as precursor compounds.