公开(公告)号：US09087776B2

公开(公告)日：2015-07-21

申请号：US13945613

申请日：2013-07-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jae Hoon Lee

IPC分类号： H01L29/267 ,  H01L29/26 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L21/02

CPC分类号： H01L29/267 ,  H01L21/0237 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/02529 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/26 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： In a nitride-based semiconductor device, an undoped gallium nitride (GaN) layer is formed on an aluminum gallium nitride (AlGaN) layer, and a silicon carbon nitride (SixC1-xN) functional layer is formed on the undoped GaN layer.

摘要翻译： 在氮化物类半导体器件中，在氮化铝镓（AlGaN）层上形成未掺杂的氮化镓（GaN）层，在未掺杂的GaN层上形成氮化硅（SixC1-xN）功能层。

公开(公告)号：US20150200256A1

公开(公告)日：2015-07-16

申请号：US13856684

申请日：2013-04-04

申请人： Kyma Technologies, Inc.

发明人： Andrew D. Hanser ,  Lianghong Liu ,  Edward Preble ,  Denis Tsvetkov ,  N. Mark Williams ,  Xueping Xu

IPC分类号： H01L29/20 ,  H01L29/04 ,  H01L29/06

CPC分类号： H01L21/02694 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/0688 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

摘要： Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.

摘要翻译： 用于制造光电子器件（如发光二极管（LED），激光二极管（LD））和光电检测器的III族（Al，Ga，In）N单晶，制品和膜以及电子器件（如高电子迁移率晶体管 由III-V族氮化物组成的HEMT）以及制造这种晶体，制品和薄膜的方法。

公开(公告)号：US20150194479A1

公开(公告)日：2015-07-09

申请号：US14233699

申请日：2013-09-24

申请人： FLOSFIA INC.

发明人： Kentaro Kaneko ,  Toshimi Hitora ,  Takashi Hirao

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/24

CPC分类号： H01L29/04 ,  C30B25/02 ,  C30B29/20 ,  C30B29/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/24

摘要： There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.

摘要翻译： 提供了包括质量好的刚玉水晶膜的半导体器件。 提供了一种半导体器件，其包括各自具有刚玉晶体结构的基底基板，半导体层和绝缘膜。 具有刚玉晶体结构的材料包括能够用作绝缘膜的许多类型的氧化膜。 由于所有的基底，半导体层和绝缘膜都具有刚玉晶体结构，所以可以在基底基板上实现质量好的半导体层和绝缘膜。

公开(公告)号：US09070794B2

公开(公告)日：2015-06-30

申请号：US14529092

申请日：2014-10-30

申请人： Tsinghua University ,  Hon Hai Precision Industry Co., Ltd.

发明人： Yang Wei ,  Shou-Shan Fan

IPC分类号： H01L33/62 ,  H01L33/00 ,  H01L21/02 ,  H01L33/64 ,  H01L33/36 ,  H01L33/20 ,  B82Y10/00 ,  H01L51/00 ,  B82Y40/00

CPC分类号： H01L33/0062 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/36 ,  H01L33/64 ,  H01L33/641 ,  H01L51/0048 ,  H01L2924/0002 ,  Y10S977/742 ,  H01L2924/00

摘要： A method for making light emitting diode, the method includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is suspended above the epitaxial growth surface. A first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface in that order. A third semiconductor layer is formed on a surface of the second semiconductor layer, wherein the third semiconductor layer includes a plurality of spaced protrusions. A portion of the first semiconductor layer is exposed by etching a portion of the third semiconductor layer, the second semiconductor layer, and the active layer. A first electrode is formed to electrically connected to the first semiconductor layer and a second electrode is formed to electrically connected to the second semiconductor layer.

摘要翻译： 一种制造发光二极管的方法，该方法包括以下步骤。 提供了具有外延生长面的基板。 碳纳米管层悬浮在外延生长表面上方。 在外延生长表面上依次生长第一半导体层，有源层和第二半导体层。 第三半导体层形成在第二半导体层的表面上，其中第三半导体层包括多个间隔开的突起。 通过蚀刻第三半导体层，第二半导体层和有源层的一部分来暴露第一半导体层的一部分。 第一电极被形成为电连接到第一半导体层，并且第二电极形成为电连接到第二半导体层。

公开(公告)号：US20150179857A1

公开(公告)日：2015-06-25

申请号：US14632167

申请日：2015-02-26

申请人： EPISTAR CORPORATION

发明人： Shiuan-Leh LIN

IPC分类号： H01L31/0687 ,  H01L31/0725 ,  H01L33/30 ,  H01L31/0236 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/0735

CPC分类号： H01L31/0687 ,  H01L21/0237 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02513 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/0725 ,  H01L31/0735 ,  H01L33/04 ,  H01L33/12 ,  H01L33/22 ,  H01L33/30 ,  Y02E10/542 ,  Y02E10/544

摘要： An optoelectronic device comprises a substrate; a converting structure for converting energy between light and electric current over the substrate; and a semiconductor buffer layer combination between the substrate and the converting structure, the semiconductor buffer layer combination comprising multiple first semiconductor layers and multiple second semiconductor layers alternately stacked, wherein each of the multiple first semiconductor layers comprises a first element, each of the multiple second semiconductor layers comprises a second element different from the first element, and the composition ratio of the first element gradually increases or decreases with an increase of the distance between the first semiconductor layers and the substrate.

摘要翻译： 光电器件包括衬底; 用于在基板上转换光和电流之间的能量的转换结构; 以及在所述基板和所述转换结构之间的半导体缓冲层组合，所述半导体缓冲层组合包括交替堆叠的多个第一半导体层和多个第二半导体层，其中所述多个第一半导体层中的每一个包括第一元件， 半导体层包括与第一元素不同的第二元素，并且第一元素的组成比随着第一半导体层和衬底之间的距离的增加而逐渐增加或减小。

公开(公告)号：US20150170907A1

公开(公告)日：2015-06-18

申请号：US14133509

申请日：2013-12-18

申请人： ASM IP HOLDING B.V.

发明人： Suvi P. Haukka ,  Fu Tang ,  Michael Givens ,  Jan Willem Maes ,  Qi Xie

IPC分类号： H01L21/02

CPC分类号： H01L21/02175 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264 ,  H01L29/2203 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7786 ,  H01L29/78

摘要： In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

公开(公告)号：US20150155436A1

公开(公告)日：2015-06-04

申请号：US14594487

申请日：2015-01-12

申请人： LG INNOTEK CO., LTD.

发明人： Myung Hoon JUNG ,  Hyun Chul Lim ,  Sul Hee Kim ,  Rak Jun CHOI

IPC分类号： H01L33/20 ,  H01L33/62 ,  H01L33/16

CPC分类号： H01L33/20 ,  F21K9/23 ,  F21Y2115/10 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L33/24 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/10158 ,  H01L2924/00014

摘要： A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.

摘要翻译： 公开了一种发光二极管。 所公开的发光二极管包括包括第一导电型半导体层，有源层和第二导电型半导体层的发光结构。 第一导电型半导体层，有源层和第二导电型半导体层被设置成沿相同的方向彼此相邻。 活性层包括至少一次交替层叠的阱和势垒层。 阱层具有比阻挡层更窄的能带隙。 发光二极管还包括设置在第一导电型半导体层中的掩模层，设置在第一导电型半导体层上的第一电极和设置在第二导电型半导体层上的第二电极。 第一导电型半导体层形成有至少一个凹部。

公开(公告)号：US20150151973A1

公开(公告)日：2015-06-04

申请号：US14409815

申请日：2013-06-25

申请人： THE OHIO STATE UNIVERSITY

发明人： Ly James Lee ,  Wenyi Huang ,  Jianfeng Yu

IPC分类号： C01B31/04

CPC分类号： C01B32/184 ,  B82Y30/00 ,  C01B32/192 ,  C01B32/23 ,  C03C17/22 ,  C03C25/44 ,  C03C2217/28 ,  C03C2217/282 ,  C04B41/009 ,  C04B41/5001 ,  C04B41/85 ,  H01L21/0237 ,  H01L21/02527 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/2007 ,  C04B35/00

摘要： A facile method to produce covalently bonded graphene coating on various solid substrates is disclosed in the present invention. According to one embodiment, a combination of graphite, graphene oxide or graphene and silicon compound with or without a metal containing compound in an air free environment is processed at high temperatures to produce covalent carbide bonding among graphene layers and between graphene and substrate surface.

摘要翻译： 在本发明中公开了在各种固体基质上制备共价键合的石墨烯涂层的简便方法。 根据一个实施方案，在无空气环境中将石墨烯，氧化石墨烯或石墨烯与含有金属的化合物的硅化合物组合在高温下进行处理，以在石墨烯层之间以及在石墨烯与基材表面之间产生共价碳化物结合。

公开(公告)号：US09048347B2

公开(公告)日：2015-06-02

申请号：US13647445

申请日：2012-10-09

申请人： Yang Wei ,  Shou-Shan Fan

发明人： Yang Wei ,  Shou-Shan Fan

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L21/02 ,  H01L33/16 ,  H01L33/20

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02444 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/16 ,  H01L33/20

摘要： An epitaxial structure is provided. The epitaxial structure comprises a substrate, a carbon nanotube layer and an epitaxial layer stacked in that order. The substrate has an epitaxial growth surface and defines a plurality of first grooves and first bulges on the epitaxial growth surface. The carbon nanotube layer covers the epitaxial growth surface, wherein a first part of the carbon nanotube layer is attached on top surface of the first bulges, and a second part of the carbon nanotube layer is attached on bottom surface and side surface of the first grooves. The epitaxial layer is formed on the epitaxial growth surface, and the carbon nanotube layer is sandwiched between the epitaxial layer and the substrate.

摘要翻译： 提供外延结构。 外延结构包括依次层叠的基板，碳纳米管层和外延层。 衬底具有外延生长表面并且在外延生长表面上限定多个第一凹槽和第一凸起。 所述碳纳米管层覆盖所述外延生长面，其中，所述碳纳米管层的第一部分附着在所述第一凸起的顶面上，所述碳纳米管层的第二部分附着在所述第一凹槽的底面和侧面 。 在外延生长面上形成外延层，将碳纳米管层夹在外延层和基板之间。

公开(公告)号：US20150144881A1

公开(公告)日：2015-05-28

申请号：US14608661

申请日：2015-01-29

申请人： SunEdison Semiconductor Limited (UEN201334164H) ,  Kansas State University Research Foundation

发明人： Michael R. Seacrist ,  Vikas Berry ,  Phong Tuan Nguyen

IPC分类号： H01L21/02 ,  H01L29/267

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/0237 ,  H01L21/02376 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02614 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267

摘要： The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.

摘要翻译： 本发明一般涉及直接在诸如半导体衬底的衬底的表面上制备石墨烯层的方法。 石墨烯层可以形成为与衬底的表面直接接触，或者可以在衬底表面和石墨烯层之间形成材料的中间层。