公开(公告)号：US07031577B2

公开(公告)日：2006-04-18

申请号：US10990950

申请日：2004-11-16

Applicant: Oskar J. Painter ,  David W. Vernooy ,  Kerry J. Vahala

Inventor： Oskar J. Painter ,  David W. Vernooy ,  Kerry J. Vahala

IPC: G02B6/26 ,  G02B6/30

CPC classification number: G02F1/3137 ,  B82Y20/00 ,  G02B6/10 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/132 ,  G02B6/266 ,  G02B6/30 ,  G02B2006/12097 ,  G02B2006/12128 ,  G02B2006/12142 ,  G02B2006/12145 ,  G02B2006/12147 ,  G02B2006/12159 ,  G02B2006/12176 ,  G02F1/011 ,  G02F1/0118 ,  G02F1/01708 ,  G02F1/225 ,  G02F2201/063 ,  G02F2201/307 ,  G02F2203/15

Abstract: A multi-layer laterally-confined dispersion-engineered optical waveguide may include one multi-layer reflector stack for guiding an optical mode along a surface thereof, or may include two multi-layer reflector stacks with a core therebetween for guiding an optical mode along the core. Dispersive properties of such multi-layer waveguides enable modal-index-matching between low-index optical fibers and/or waveguides and high-index integrated optical components and efficient transfer of optical signal power therebetween. Integrated optical devices incorporating such multi-layer waveguides may therefore exhibit low (

公开(公告)号：US06959123B2

公开(公告)日：2005-10-25

申请号：US10988975

申请日：2004-11-15

Applicant: Oskar J. Painter ,  David W. Vernooy ,  Kerry J. Vahala

Inventor： Oskar J. Painter ,  David W. Vernooy ,  Kerry J. Vahala

IPC: G02B6/10 ,  G02B6/12 ,  G02B6/122 ,  G02B6/132 ,  G02B6/26 ,  G02B6/30 ,  G02B6/34 ,  G02F1/01 ,  G02F1/017 ,  G02F1/225 ,  G02F1/313 ,  G02F1/025

CPC classification number: G02F1/3137 ,  B82Y20/00 ,  G02B6/10 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/132 ,  G02B6/266 ,  G02B6/30 ,  G02B2006/12097 ,  G02B2006/12128 ,  G02B2006/12142 ,  G02B2006/12145 ,  G02B2006/12147 ,  G02B2006/12159 ,  G02B2006/12176 ,  G02F1/011 ,  G02F1/0118 ,  G02F1/01708 ,  G02F1/225 ,  G02F2201/063 ,  G02F2201/307 ,  G02F2203/15

Abstract: A multi-layer laterally-confined dispersion-engineered optical waveguide may include one multi-layer reflector stack for guiding an optical mode along a surface thereof, or may include two multi-layer reflector stacks with a core therebetween for guiding an optical mode along the core. Dispersive properties of such multi-layer waveguides enable modal-index-matching between low-index optical fibers and/or waveguides and high-index integrated optical components and efficient transfer of optical signal power therebetween. Integrated optical devices incorporating such multi-layer waveguides may therefore exhibit low (

Abstract translation: 多层横向限制的色散工程光波导可以包括一个用于沿其表面引导光学模式的多层反射器叠层，或者可以包括两个多层反射器叠层，其间具有用于引导光学模式沿着 核心。 这种多层波导的分散特性使得低折射率光纤和/或波导与高折射率集成光学部件之间的模式折射率匹配和其间的光信号功率的有效传输。 因此，结合这样的多层波导的集成光学器件可能呈现低（<3dB）的插入损耗。 将有源层（电光，电吸收，非线性光学）结合到这样的波导中使得能够以相对低电压/低强度的控制信号主动地控制光学损耗和/或模态指数。 因此，结合这样的波导的集成光学器件可能表现出较低的驱动信号要求。

公开(公告)号：US06613596B2

公开(公告)日：2003-09-02

申请号：US10153490

申请日：2002-05-20

Applicant: Mark J. Bloemer ,  Krishna Myneni

Inventor： Mark J. Bloemer ,  Krishna Myneni

IPC: H01L2100

CPC classification number: G02B6/12004 ,  G02B2006/12123 ,  G02B2006/12128 ,  G02B2006/12142 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/0265

Abstract: In the monolithically integrated photonic circuit, light travels through multiple quantum well channel waveguides and is coupled into and out of the devices that reside in common on a single semiconductor substrate. Each device, which is co-planar with any other device on the substrate, is comprised of a quantum well channel waveguide of a pre-determined length and an electrical contact pad mounted on the waveguide that facilitates the application of electric field to the device. The function of any particular device as an optical source, an optical modulator or a photo-detector is determined by the bias mode of electric field applied to that particular device. The circuit is comprised of multiple rows of such devices. Each of these rows contains at least three devices which function as an optical source, an optical modulator and a photo-detector, respectively, and are separated from each other by electrical isolation gaps.

公开(公告)号：US06238943B1

公开(公告)日：2001-05-29

申请号：US09401784

申请日：1999-09-22

Applicant: Hirohiko Kobayashi ,  Mitsuru Ekawa ,  Nirou Okazaki ,  Shouichi Ogita ,  Haruhisa Soda ,  Haruhiko Tabuchi ,  Takuya Fujii

Inventor： Hirohiko Kobayashi ,  Mitsuru Ekawa ,  Nirou Okazaki ,  Shouichi Ogita ,  Haruhisa Soda ,  Haruhiko Tabuchi ,  Takuya Fujii

IPC: H01L2100

CPC classification number: G02B6/12004 ,  G02B6/305 ,  G02B2006/12128 ,  G02B2006/12195 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/1014 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/20 ,  H01S5/2272 ,  H01S5/3428 ,  Y10S438/942

Abstract: An optical semiconductor device of the present invention is provided with a core layer having a quantum well layer in that film thickness gets thinner from a inner region to an end portion in an optical waveguide region.

Abstract translation: 本发明的光半导体装置具有在光波导区域中从内部区域到端部部分的薄膜厚度的量子阱层的芯层。