公开(公告)号：US06540509B2

公开(公告)日：2003-04-01

申请号：US09867564

申请日：2001-05-31

申请人： Takanobu Asano ,  Katsutoshi Ishii ,  Hiroyuki Yamamoto ,  George Hoshi ,  Kazutoshi Miura

发明人： Takanobu Asano ,  Katsutoshi Ishii ,  Hiroyuki Yamamoto ,  George Hoshi ,  Kazutoshi Miura

IPC分类号： F27B500

CPC分类号： C23C16/45561 ,  C23C16/401 ,  C23C16/452 ,  C23C16/4557 ,  C30B33/005 ,  H01L21/67109

摘要： The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.

摘要翻译： 本发明一般涉及用于对待处理物体进行热处理的热处理系统和方法。 特别地，本发明涉及一种热处理系统，其中待处理物体被运送在反应容器中，该反应容器被减压至预定的真空度并将其内部加热到预定的工艺温度，并且 处理气体经由供气通道供给到反应容器中以处理物体。

公开(公告)号：US20030049374A1

公开(公告)日：2003-03-13

申请号：US09950013

申请日：2001-09-10

发明人： Bruce M. Warnes ,  Andrew L. Purvis ,  Daniel L. Near

IPC分类号： C23C016/00

CPC分类号： C23C16/4557 ,  C23C16/4488

摘要： Chemical vapor deposition apparatus and method are provided with coating gas distribution and exhaust systems that provide more uniform coating gas temperature and coating gas flow distribution among a plurality of distinct coating zones disposed along the length of a coating chamber.

摘要翻译： 化学气相沉积装置和方法设置有涂层气体分布和排气系统，其在沿着涂覆室的长度设置的多个不同的涂层区域之间提供更均匀的涂覆气体温度和涂覆气体流量分布。

公开(公告)号：US20030037879A1

公开(公告)日：2003-02-27

申请号：US09939332

申请日：2001-08-24

申请人： Applied Materials, Inc.

发明人： Farahmand E. Askarinam ,  Robert W. Wu ,  Jeremiah T. Pender ,  Gerardo A. Delgadino ,  Hoiman Hung ,  Ananda H. Kumar ,  Olga Regelman ,  Douglas A. Buchberger JR.

IPC分类号： C23F001/00 ,  C23C016/00 ,  H01L021/306

CPC分类号： C23C16/4557 ,  C23C16/4411 ,  C23C16/45572 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67017

摘要： Apparatus for gas distribution in a semiconductor wafer processing chamber 200 having a roof 228. The roof 228 has a top surface 608 and a bottom surface 312. A recess 314 is disposed within the bottom surface 312 of the roof 228. A gas distribution plate 316 is disposed within the recess 314 and a material layer coating 320 is disposed upon the bottom surfaces 312/500 of the roof 228 and the gas distribution plate 316. The material layer coating 320 and the gas distribution plate 316 each have a plurality of apertures 322/404. The apertures 404 of the gas distribution plate 316 coincide with the apertures 322 in the material layer coating 320. The material layer coating 320 is formed from silicon carbide and most preferably is deposited by chemical vapor deposition (CVD). Both the roof 228 and gas distribution plate 316 are fabricated from silicon carbide.

摘要翻译： 在具有屋顶228的半导体晶片处理室200中用于气体分配的装置。屋顶228具有顶表面608和底表面312.凹部314设置在屋顶228的底表面312内。气体分配板316 设置在凹部314内，并且材料层涂层320设置在屋顶228和气体分配板316的底面312/500上。材料层涂层320和气体分配板316各自具有多个孔322 / 404。 气体分配板316的孔404与材料层涂层320中的孔322重合。材料层涂层320由碳化硅形成，最优选通过化学气相沉积（CVD）沉积。 屋顶228和气体分配板316均由碳化硅制成。

公开(公告)号：US20020197793A1

公开(公告)日：2002-12-26

申请号：US09936070

申请日：2002-06-06

发明人： Charles N Dornfest ,  Xiaoliang Jin ,  Yaxin Wang ,  Jun Zhao ,  Yasutoshi Okuno ,  Akihiko Tsuzumitani ,  Yoshihiro Mori ,  Shreyas Kher ,  Annabel Nickles ,  Xianzhi (Jerry) Tao

IPC分类号： H01L021/8242 ,  H01L021/31 ,  H01L021/469

CPC分类号： H01L21/02271 ,  C23C16/0272 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/4557 ,  C23C16/56 ,  H01L21/02197 ,  H01L21/02205 ,  H01L21/02337 ,  H01L21/31691 ,  H01L28/55

摘要： In one embodiment, the process comprises depositing a CVD metal oxide layer on the substrate at a substrate temperature of less than or equal to about 480null C. and annealing the metal oxide layer. In one aspect, annealing comprises providing a first substrate temperature between abut 600null C. and 900null C., maintaining the first substrate temperature for a time period of between about 0.1 seconds and 30 minutes, providing a second substrate temperature between about 500null C. to 600null C., and maintaining the second substrate temperature for a time period of at least 10 minutes. In another embodiment, the process comprises depositing a first electrode; depositing a CVD metal oxide layer on the first electrode at a substrate temperature of less than or equal to about 480null C.; and depositing a second electrode on the oxide layer. In one aspect the metal oxide layer is annealed prior to deposition of the second electrode. In another aspect, the metal oxide layer is anneal subsequent to deposition of the second electrode. In one aspect, annealing comprises providing a first substrate temperature between about 600null C. and 900null C., maintaining the first substrate temperature for a time period of between about 0.1 seconds and 30 minutes, providing a second substrate temperature between about 500null C. to 600null C., and maintaining the second substrate temperature for a time period of at least 10 minutes. In another aspect, the present invention provides a capacitor comprising a platinum bottom electrode, a platinum top electrode, and a dielectric layer disposed between in which the capacitor has a current leakage of less than 10 fA/cell.

摘要翻译： 在一个实施例中，该工艺包括在小于或等于约480℃的衬底温度下在衬底上沉积CVD金属氧化物层并退火金属氧化物层。 在一个方面，退火包括提供在600℃和900℃之间的第一衬底温度，将第一衬底温度保持在约0.1秒和30分钟之间的时间段，提供约500℃之间的第二衬底温度 并保持第二衬底温度至少10分钟的时间段。 在另一个实施例中，该方法包括沉积第一电极; 在小于或等于约480℃的衬底温度下在第一电极上沉积CVD金属氧化物层; 以及在所述氧化物层上沉积第二电极。 在一个方面，金属氧化物层在沉积第二电极之前进行退火。 在另一方面，金属氧化物层在第二电极沉积之后退火。 在一个方面，退火包括提供在约600℃和900℃之间的第一衬底温度，将第一衬底温度保持在约0.1秒和30分钟之间的时间段，提供约500℃之间的第二衬底温度 并保持第二衬底温度至少10分钟的时间段。 另一方面，本发明提供一种电容器，其包括铂底电极，铂顶电极和布置在其间的电介质层，其中电容器具有小于10fA /电池的电流泄漏。

公开(公告)号：US20020195710A1

公开(公告)日：2002-12-26

申请号：US10209784

申请日：2002-07-31

申请人： Micron Technology, Inc.

发明人： Garo J. Derderian ,  Gordon Morrison

IPC分类号： C23C016/00 ,  H01L021/44 ,  H01L023/48

CPC分类号： C23C16/4557 ,  C23C16/34 ,  C23C16/452 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/76843

摘要： Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

公开(公告)号：US20020144655A1

公开(公告)日：2002-10-10

申请号：US09999499

申请日：2001-10-24

发明人： Tony P. Chiang ,  Karl F. Leeser ,  Jeffrey A. Brown ,  Jason E. Babcoke

IPC分类号： C23C016/00

CPC分类号： C23C16/4412 ,  C23C16/0227 ,  C23C16/4411 ,  C23C16/4486 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/4586 ,  C23C16/515 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/76843

摘要： A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. Multiple valves are arranged and controlled to selectively introduce process gases into the chamber.

摘要翻译： 沉积系统包括用于进行ALD工艺以在衬底上沉积层的处理室。 多个阀被布置和控制以选择性地将工艺气体引入室中。

公开(公告)号：US06454909B1

公开(公告)日：2002-09-24

申请号：US09611665

申请日：2000-07-06

申请人： Kimihiro Matsuse ,  Sakae Nakatsuka ,  Kentaro Oshimo

发明人： Kimihiro Matsuse ,  Sakae Nakatsuka ,  Kentaro Oshimo

IPC分类号： C23C1434

CPC分类号： C23C16/45565 ,  C23C16/45521 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/481 ,  H01L21/67069

摘要： A processing apparatus includes a processing chamber, a support mechanism provided in the processing chamber to support a wafer having an underlying film formed on a major surface and adjacent side face, and a supply member provided at the processing chamber and spaced from the support mechanism, to supply an incoming gas into the processing chamber. A gas carrying mechanism is provided for selectively sending a film forming gas and etching gas to the gas supply member. A main film is formed on a portion of an underlying film formed on the wafer supported on the support mechanism, by using the film forming gas supplied from the gas supply member. A portion of the underlying film, which is exposed, not covered with the main film, is etched away by the etching gas supplied from the gas supplied member.

摘要翻译： 一种处理装置，包括处理室，设置在处理室中以支撑具有形成在主表面和相邻侧面上的下面的膜的晶片的支撑机构，以及设置在处理室处并与支撑机构间隔开的供给构件， 以将进入的气体供应到处理室中。 提供了一种气体输送机构，用于选择性地将成膜气体和蚀刻气体送到气体供应构件。 通过使用从气体供给构件供给的成膜气体，在支撑在支撑机构上的形成在晶片上的下层膜的一部分上形成主膜。 暴露于未被主膜覆盖的底层膜的一部分被从供气部件供给的蚀刻气体蚀刻掉。

公开(公告)号：US06453992B1

公开(公告)日：2002-09-24

申请号：US09563525

申请日：2000-05-03

申请人： Chang-Jae Kim

发明人： Chang-Jae Kim

IPC分类号： C23C1600

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention relates to a temperature controllable gas distributor which includes a cover having a first passage between its upper cover and lower cover, a second passage embedded along an edge portion of the upper cover, a first heater installed in the second passage, a support portion welded around the cover, and a distributing plate fixed at a lower portion of the support portion. The distributing plate includes a plurality of nozzles, and a third passage which is a passage of fluid is formed in the interior of the distributing plate 201. Second and third heaters are installed in the third passage. In the gas distribution apparatus according to the present invention, since it is possible to control the temperature of the cover and the distributing plate, namely, the entire portions contacting with gas, an abnormal reaction and liquefaction of a source gas can be prevented. Therefore, when depositing a thin film on the wafer using the gas distribution apparatus, it is possible to prevent a pollution which occurs due to the particles formed on the thin film, and a uniform deposition thickness and a faster deposition speed are obtained. As a result, the reliability of the semiconductor device is enhanced, and the fabrication time is decreased for thereby decreasing the fabrication cost.

摘要翻译： 温度可控气体分配器本发明涉及一种温度可控气体分配器，其包括盖子，该盖子在其上盖和下盖之间具有第一通道，沿着上盖的边缘部分嵌入的第二通道，安装在第二通道中的第一加热器， 部分焊接在盖周围，分配板固定在支撑部分的下部。 分配板包括多个喷嘴，在分配板201的内部形成作为流体通道的第三通道。第二和第三加热器安装在第三通道中。 在根据本发明的气体分配装置中，由于可以控制盖和分配板的温度，即与气体接触的整个部分，可以防止源气体的异常反应和液化。 因此，当使用气体分配装置在晶片上沉积薄膜时，可以防止由于在薄膜上形成的颗粒而产生的污染，并且获得均匀的沉积厚度和更快的沉积速度。 结果，提高了半导体器件的可靠性，降低了制造时间，从而降低了制造成本。

公开(公告)号：US06444042B1

公开(公告)日：2002-09-03

申请号：US09511890

申请日：2000-02-23

申请人： Seung Yoon Yang ,  In Jae Park ,  Jong Woo Yoon ,  Chang Jae Kim ,  Tanigawa Eiki

发明人： Seung Yoon Yang ,  In Jae Park ,  Jong Woo Yoon ,  Chang Jae Kim ,  Tanigawa Eiki

IPC分类号： C23C1600

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/45572

摘要： A gas injection system for a chemical vapor deposition device includes a gas providing pipe providing gases into the system, a shower head unit coupled to the gas providing pipe for evenly injecting the gases on a wafer, and a temperature control unit coupled to the shower head unit for controlling a temperature of the shower head unit.

摘要翻译： 一种用于化学气相沉积装置的气体注入系统包括：向系统提供气体的气体提供管，连接到气体提供管的喷淋头单元，用于将气体均匀地注入到晶片上;以及温度控制单元，其连接到淋浴头 用于控制淋浴头单元的温度的单元。

公开(公告)号：US6431115B2

公开(公告)日：2002-08-13

申请号：US86386001

申请日：2001-05-23

申请人： TOKYO ELECTRON LTD

发明人： KOMINO MITSUAKI ,  SAKAMOTO YOSHIO

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  C23C16/00 ,  H05H1/00

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： Claimed and disclosed is a treatment apparatus for treating a substrate under decompressed atmosphere, comprising: a chamber, an exhausting means for exhausting the chamber, a first electrode provided in the chamber on which the substrate is mounted or held, a second electrode provided in the chamber opposing the first electrode, a liquid supply source containing a liquid material from which a process gas is generated, a housing provided between the liquid supply source and the chamber to be communicated to the liquid supply source and the chamber, a porous heating unit arranged in the housing for generating the process gas by heating the liquid material supplied from the liquid supply source into the housing in order to vaporize the liquid material, a process gas introduction section provided between the housing and the chamber for guiding the process gas from the housing to the chamber and vibrators to vibrate the porous heating unit. The porous heating unit which is capable of generating heat for itself has an element for electrically heating the porous heating unit. This porous heating unit is arranged in the housing for generating the process gas by heating the liquid material supplied from the liquid supply source into the housing in order to vaporize the liquid material. The treatment apparatus further comprises a process gas introduction section disposed between the housing and the chamber for guiding the process gas from the housing to the chamber.

摘要翻译： 权利要求和公开的是一种用于在减压气氛下处理基板的处理装置，包括：室，用于排出室的排出装置，设置在其中安装或保持基板的室中的第一电极， 相对于第一电极的液体供应源，包含产生处理气体的液体材料的液体供应源，设置在液体供应源和要连通到液体供应源和室之间的室之间的壳体;多孔加热单元，其布置 在用于通过将从液体供应源供应的液体材料加热到壳体中以便使液体材料蒸发来产生处理气体的壳体中，设置在壳体和室之间的处理气体导入部分，用于引导处理气体从壳体 到室和振动器振动多孔加热单元。 能够自身产生热量的多孔加热单元具有用于电加热多孔加热单元的元件。 这种多孔加热单元布置在壳体中，用于通过将从液体供应源供应的液体材料加热到壳体中来产生处理气体，以便蒸发液体材料。 处理装置还包括设置在壳体和室之间的处理气体引入部分，用于将处理气体从壳体引导到腔室。