公开(公告)号：US10928741B2

公开(公告)日：2021-02-23

申请号：US16876442

申请日：2020-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Ying Wu ,  Shang-Chieh Chien ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.

公开(公告)号：US10859918B2

公开(公告)日：2020-12-08

申请号：US16261695

申请日：2019-01-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuan-Hung Chen ,  Chieh Hsieh ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20

Abstract: A method for operating a semiconductor apparatus includes generating a plurality of target droplets, deforming the target droplets into a plurality of target plumes respectively, changing an orientation of at least one of the target plumes, and generating a plurality of EUV radiations from the target plumes respectively. At least one of the EUV radiations irradiates an area on the light collector different from other EUV radiations in response to the orientation of the at least one of the target plumes.

公开(公告)号：US10824083B2

公开(公告)日：2020-11-03

申请号：US16057208

申请日：2018-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi Yang ,  Ssu-Yu Chen ,  Shang-Chieh Chien ,  Chieh Hsieh ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: A light source for extreme ultraviolet (EUV) radiation is provided. The light source includes a target droplet generator, a laser generator, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel, so as to generate plasma as the EUV radiation. The measuring device is configured to measure process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. The controller is configured to provide the control signal according to at least two of the process parameters.

公开(公告)号：US10802394B2

公开(公告)日：2020-10-13

申请号：US15884801

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Lun Chang ,  Chueh-Chi Kuo ,  Tsung-Yen Lee ,  Tzung-Chi Fu ,  Li-Jui Chen ,  Po-Chung Cheng ,  Che-Chang Hsu

IPC: G03F1/40 ,  G03F1/66 ,  G03F1/24 ,  G03F1/38

Abstract: A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.

公开(公告)号：US10725384B2

公开(公告)日：2020-07-28

申请号：US16102865

申请日：2018-08-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chao-Chen Chang ,  Shao-Wei Luo ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20

Abstract: A method includes operation below. A first task is performed by a control circuit according to a first request from a processor. A second request, for triggering a second task to be performed by the control circuit, is received by an interface circuit. A first data rate, for transmitting first data generated in the first task, is calculated by the interface circuit. A second data rate, for transmitting second data to be generated in the second task, is estimated by the interface circuit. The second task other than the first task is performed by the control circuit. The first data and the second data are transmitted from the control circuit to the processor in a condition that a sum of the first data rate and the second data rate complies with a bandwidth of a data switch coupled between the control circuit and the processor.

公开(公告)号：US10714371B2

公开(公告)日：2020-07-14

申请号：US16044765

申请日：2018-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chueh-Chi Kuo ,  Tsung-Yen Lee ,  Chia-Hsin Chou ,  Tzung-Chi Fu ,  Li-Jui Chen ,  Po-Chung Cheng ,  Che-Chang Hsu

IPC: H01L21/683 ,  G03F1/24 ,  G03F7/20

Abstract: A reticle holding tool is provided. The reticle holding tool includes a housing including a top housing member and a lateral housing member. The lateral housing member extends from the top housing member and terminates at a lower edge. The reticle holding tool further includes a reticle chuck. The reticle chuck is positioned in the housing and configured to secure a reticle. The reticle holding tool also includes a gas delivery assembly. The gas delivery assembly is positioned within the housing and configured to supply gas into the housing.

公开(公告)号：US10712651B2

公开(公告)日：2020-07-14

申请号：US15906586

申请日：2018-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen Cho ,  Fu-Jye Liang ,  Chun-Kuang Chen ,  Chih-Tsung Shih ,  Li-Jui Chen ,  Po-Chung Cheng ,  Chin-Hsiang Lin

IPC: G03F1/36 ,  G03F1/22 ,  G03F1/44 ,  G03F7/22 ,  G06T7/00 ,  G03F7/20

Abstract: A reticle used for collecting information for image-error compensation is provided. The reticle includes a first black border structure and a second black border structure formed over a substrate. The first and second black borders are concentric with a center of the substrate. The reticle further includes a first image structure and a second image structure formed over the substrate. The first and second image structures each has patterns representing features to be patterned on a semiconductor wafer. In a direction away from the center of the substrate, the second image structure, the second black border structure, the first image structure and the first black border structure are arranged in order.

公开(公告)号：US10656539B2

公开(公告)日：2020-05-19

申请号：US16117545

申请日：2018-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Ying Wu ,  Shang-Chieh Chien ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.

公开(公告)号：US20200089132A1

公开(公告)日：2020-03-19

申请号：US16295510

申请日：2019-03-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chih Hsieh ,  Kai-Hsiung Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  G03F9/00 ,  H01L23/544

Abstract: Methods of fabricating and using an overlay mark are provided. In some embodiments, the overlay mark includes an upper layer and a lower layer disposed below the upper layer. The lower layer includes a first plurality of compound gratings extending in a first direction and disposed in a first region of the overlay mark, each of the first plurality of compound gratings including one first element and at least two second elements disposed on one side of the first element, and a second plurality of compound gratings extending the first direction and disposed in a second region of the overlay mark, each of the second plurality of compound gratings including one third element and at least two fourth elements on one side of the third element. The first plurality of compound gratings is a mirror image of the second plurality of compound gratings.

公开(公告)号：US10512147B1

公开(公告)日：2019-12-17

申请号：US16240951

申请日：2019-01-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi Yang ,  Sheng-Ta Lin ,  Ssu-Yu Chen ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F7/20 ,  G03F1/24

Abstract: An extreme ultraviolet radiation source is provided, including a droplet generator and a droplet catcher. The droplet generator is configured to output a plurality of target droplets along a target droplet path that is parallel to a horizontal direction. The droplet catcher includes an open end substantially aligned with the target droplet path, and an enclosed end that is opposite to the open end. The droplet catcher also includes a pipe wall disposed between the open end the enclosed end. The pipe wall includes a first pipe wall portion having an inner top surface parallel to the horizontal direction and an inner bottom surface inclined relative to the inner top surface. In addition, the droplet catcher includes at least one gutter formed on the inner bottom surface and having a long axis extending along the horizontal direction.