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公开(公告)号：US20200027977A1
公开(公告)日：2020-01-23
申请号：US16291368
申请日：2019-03-04
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/66
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first to fifth layers, and an insulating portion. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions. The second partial region is between the third and fifth partial regions. The second layer includes first and second semiconductor regions. The third layer is provided between the third partial region and the third electrode. The fourth layer is provided between the third partial region and the third layer. The fifth layer includes first and second intermediate regions. The third layer is provided between the first and second intermediate regions. The insulating portion includes a first insulating region provided between the third layer and the third electrode.
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公开(公告)号：US20190355580A1
公开(公告)日：2019-11-21
申请号：US16284059
申请日：2019-02-25
发明人： Toshiki HIKOSAKA , Jumpei TAJIMA , Shinya NUNOUE
IPC分类号： H01L21/02 , H01L29/20 , H01L29/205 , H01L29/207 , H01L29/32 , H01L29/778 , H01L33/02 , H01L33/12 , H01L33/32 , H01L33/00
摘要： According to one embodiment, a semiconductor element includes a first nitride semiconductor region, a second nitride semiconductor region, and an intermediate region provided between the first nitride semiconductor region and the second nitride semiconductor region. A Si concentration in the intermediate region is not less than 1×1018/cm3 and not more than 1×1019/cm3. A charge density in the intermediate region is 3×1017/cm3 or less.
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公开(公告)号：US20180174849A1
公开(公告)日：2018-06-21
申请号：US15670445
申请日：2017-08-07
发明人： Kenjiro UESUGI , Toshiki HIKOSAKA , Shinya NUNOUE
IPC分类号： H01L21/28 , H01L21/44 , H01L23/532 , H01L23/482
CPC分类号： H01L29/40114 , H01L21/28008 , H01L21/44 , H01L23/482 , H01L23/53295 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/66462 , H01L29/7786
摘要： According to one embodiment, a semiconductor device includes first, second, and third electrodes, and first, second, third, fourth, and fifth semiconductor regions. The first electrode includes a first conductive region. The second electrode includes a second conductive region separated. The third electrode includes a third conductive region. The first semiconductor region is separated from the first, second, and third conductive regions. The second semiconductor region is provided between the first conductive and semiconductor regions, between the second conductive and first semiconductor regions, and between the third conductive and first semiconductor regions. The third semiconductor region is provided between the first conductive region and the second semiconductor region. The fourth semiconductor region is provided between the second conductive region and the second semiconductor region. The fifth semiconductor region is provided between the third conductive region and the second semiconductor region and between the third and fourth semiconductor regions.
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74.发明申请公开(公告)号：US20160126411A1
公开(公告)日：2016-05-05
申请号：US14994779
申请日：2016-01-13
发明人： Shinji SAITO , Rei HASHIMOTO , Jongil HWANG , Shinya NUNOUE
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/0075 , H01L33/32
摘要： According to one embodiment, a light emitting element includes n-type and p-type semiconductor layers and a light emitting unit. The light emitting unit is provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting unit emits light with a peak wavelength of not less than 530 nm. The light emitting unit includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer provided between the n-side barrier layer and the p-type semiconductor layer, a first well layer contacting the n-side barrier layer between the n-side barrier layer and the first barrier layer, a first AlGaN layer provided between the first well layer and the first barrier layer and including Alx1Ga1-x1N (0.15≦x1≦1), and a first p-side InGaN layer provided between the first AlGaN layer and the first barrier layer and including Inya1Ga1-ya1N (0
摘要翻译： 根据一个实施例，发光元件包括n型和p型半导体层和发光单元。 发光单元设置在n型半导体层和p型半导体层之间，发光单元发出峰值波长不小于530nm的光。 发光单元包括n侧阻挡层和第一发光层。 第一发光层包括设置在n侧阻挡层和p型半导体层之间的第一阻挡层，与n侧阻挡层和第一阻挡层之间的n侧势垒层接触的第一阱层， 第一AlGaN层，设置在第一阱层和第一势垒层之间，并且包括Al x Ga 1-x N（0.15和n 1; x 1和n 1 E 1）;以及设置在第一AlGaN层和第一势垒层之间的第一p侧InGaN层， Inya1Ga1-ya1N（0
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公开(公告)号：US20150340348A1
公开(公告)日：2015-11-26
申请号：US14815083
申请日：2015-07-31
发明人： Hiroshi KATSUNO , Shinji SAITO , Rei HASHIMOTO , Jongil HWANG , Shinya NUNOUE
IPC分类号： H01L25/075 , H01L33/42 , H01L33/38 , H01L33/62
CPC分类号： H01L25/0756 , H01L33/382 , H01L33/387 , H01L33/42 , H01L33/62 , H01L2224/32145 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer.
摘要翻译： 根据一个实施例，半导体发光器件包括：导电层; 第一个堆叠的身体; 第二堆叠体; 第一透光电极; 和第一互连电极。 第一层叠体包括第一半导体层和第二半导体层。 第二半导体层设置在第一半导体层和导电层之间。 第一发光层设置在第一半导体层和第二半导体层之间。 第二层叠体包括第三半导体层，第四半导体层和第二发光层。 第四半导体层设置在第三半导体层和导电层之间。 第二发光层设置在第三半导体层和第四半导体层之间。 第一互连电极设置在第二半导体层和第三半导体层之间。
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76.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A P-TYPE SEMICONDUCTOR LAYER WITH A P-TYPE IMPURITY 有权具有P型绝缘体的P型半导体层的半导体发光器件公开(公告)号：US20150270445A1
公开(公告)日：2015-09-24
申请号：US14732981
申请日：2015-06-08
CPC分类号： H01L33/325 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/40 , H01S5/32341
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分和p侧电极。 发光部分设置在n型和p型半导体层之间，并且包括多个势垒层和多个阱层。 p侧电极与p型半导体层接触。 p型半导体层包括第一，第二，第三和第四p型层。 第一p型层与p侧电极接触。 第二p型层与发光部接触。 第三p型层设置在第一p型层和第二p型层之间。 第四p型层设置在第二p型层和第三p型层之间。 第二p型层含有Al并含有比第一浓度低的浓度的p型杂质。
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公开(公告)号：US20150263223A1
公开(公告)日：2015-09-17
申请号：US14632131
申请日：2015-02-26
发明人： Toshihide ITO , Hiroshi ONO , Shinya NUNOUE
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/32 , H01L33/40 , H01L33/405
摘要： According to one embodiment, a semiconductor light emitting element includes a first electrode, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a first insulating portion, and a first conductive layer. The first electrode includes first and second regions. The first semiconductor layer is separated from the first region, and includes first and second portions. The light emitting layer is provided between the second portion and the first region. The second semiconductor layer is provided between the light emitting layer and the first region. The second electrode is provided between the first region and the second semiconductor layer to contact the second semiconductor layer. The first insulating portion is provided between the first region and the second electrode. The first conductive layer is provided between the first portion and the first region, and includes a contact portion contacting the first portion.
摘要翻译： 根据一个实施例，半导体发光元件包括第一电极，第一半导体层，发光层，第二半导体层，第一绝缘部分和第一导电层。 第一电极包括第一和第二区域。 第一半导体层与第一区域分离，并且包括第一和第二部分。 发光层设置在第二部分和第一区域之间。 第二半导体层设置在发光层和第一区域之间。 第二电极设置在第一区域和第二半导体层之间以接触第二半导体层。 第一绝缘部分设置在第一区域和第二电极之间。 第一导电层设置在第一部分和第一区域之间，并且包括接触第一部分的接触部分。
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公开(公告)号：US20150060763A1
公开(公告)日：2015-03-05
申请号：US14459602
申请日：2014-08-14
发明人： Toshihide ITO , Jumpei TAJIMA , Hiroshi KATSUNO , Shinya NUNOUE
CPC分类号： H01L33/0095 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/66462 , H01L29/7787 , H01L33/32 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor device includes an n-type semiconductor layer and a first metal layer. The n-type semiconductor layer includes a nitride semiconductor. The n-type semiconductor layer includes a boron-containing region including boron bonded to oxygen. The first metal layer contacts the boron-containing region.
摘要翻译： 根据一个实施例，半导体器件包括n型半导体层和第一金属层。 n型半导体层包括氮化物半导体。 n型半导体层包括含有与氧结合的硼的含硼区域。 第一金属层接触含硼区域。
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公开(公告)号：US20140361248A1
公开(公告)日：2014-12-11
申请号：US14470024
申请日：2014-08-27
发明人： Hiroshi KATSUNO , Satoshi MITSUGI , Toshihide ITO , Shinya NUNOUE
CPC分类号： H01L33/42 , H01L29/2003 , H01L33/0025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.
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80.发明申请公开(公告)号：US20140284647A1
公开(公告)日：2014-09-25
申请号：US14284501
申请日：2014-05-22
发明人： Toru GOTODA , Toshiyuki OKA , Shinya NUNOUE , Kotaro ZAlMA
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/40 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The light emitting element having a light extraction surface. The first electrode layer on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface of the light emitting element. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The light emitting element has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.
摘要翻译： 半导体发光器件具有发光元件，第一电极层，第二电极层，种子电极层和镀层。 发光元件在基板上具有基于氮化物的III-V族化合物半导体。 发光元件具有光提取面。 光提取面上的第一电极层。 第二电极层设置在与发光元件的光提取面相反的表面上。 种子电极层构造成覆盖第二电极层的整个表面。 电镀层设置在种子电极层上。 发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。 发光元件具有按照第二导电类型半导体层，发光层和第一导电类型半导体层的顺序逐渐变窄的宽度的正锥形形状。
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