- 专利标题： SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
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申请号： US16284059申请日： 2019-02-25
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公开(公告)号： US20190355580A1公开(公告)日： 2019-11-21
- 发明人: Toshiki HIKOSAKA , Jumpei TAJIMA , Shinya NUNOUE
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Minato-ku
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2018-095903 20180518
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/20 ; H01L29/205 ; H01L29/207 ; H01L29/32 ; H01L29/778 ; H01L33/02 ; H01L33/12 ; H01L33/32 ; H01L33/00
摘要：
According to one embodiment, a semiconductor element includes a first nitride semiconductor region, a second nitride semiconductor region, and an intermediate region provided between the first nitride semiconductor region and the second nitride semiconductor region. A Si concentration in the intermediate region is not less than 1×1018/cm3 and not more than 1×1019/cm3. A charge density in the intermediate region is 3×1017/cm3 or less.
公开/授权文献
- US10923349B2 Semiconductor element and method for manufacturing the same 公开/授权日：2021-02-16
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