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公开(公告)号：US4669825A
公开(公告)日：1987-06-02
申请号：US677461
申请日：1984-12-03
申请人： Hiroshi Itoh , Yasutoshi Suzuki , Shinya Ohmi , Tsuyoshi Fukada , Kunihiko Hara
发明人： Hiroshi Itoh , Yasutoshi Suzuki , Shinya Ohmi , Tsuyoshi Fukada , Kunihiko Hara
CPC分类号： B60R1/088
摘要： A control apparatus for a reflection mirror of a vehicle is disclosed. The control apparatus is provided with a rear light sensor, an exterior light sensor and a circuit for driving the reflection mirror into a dazzle-free condition when it is detected by the sensors that an intensive rear light is incident from the rear of the vehicle and the exterior of the vehicle is dark. The control apparatus is further provided with a delay circuit which delays driving the reflection mirror into the dazzle-free condition for a predetermined interval of time after the exterior light sensor detects that the exterior of the vehicle is dark. The exterior light sensor may be a switching circuit which switches on and off front light bulbs of the vehicle. The control apparatus is still further provided with a delay circuit which keeps the dazzle-free condition for a predetermined interval of time even after the rear light sensor detects that the rear of the vehicle is dark.
摘要翻译： 公开了一种用于车辆的反射镜的控制装置。 控制装置设置有后光传感器，外部光传感器和电路，用于当由传感器检测到强烈的后光从车辆的后部入射时将反射镜驱动到无眩光状态，以及 车辆的外部是黑暗的。 该控制装置还设置有延迟电路，该延迟电路在外部光传感器检测到车辆的外部变暗之后，延迟将反射镜驱动到无眩光状态达预定的时间间隔。 外部光传感器可以是开关电路，其接通和关闭车辆的前灯泡。 该控制装置还具有延迟电路，即使在后方光传感器检测到车辆的后方较暗之后，也能够使无眩光状态保持规定的时间间隔。
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公开(公告)号：US4499451A
公开(公告)日：1985-02-12
申请号：US364633
申请日：1982-04-02
申请人： Yasutoshi Suzuki , Kunihiko Hara , Ryo Sato
发明人： Yasutoshi Suzuki , Kunihiko Hara , Ryo Sato
CPC分类号： B60Q3/023 , B60R1/12 , G09F13/22 , B60R2001/1215 , G09F2013/227
摘要： A mirror arrangement including a transparent glass member, a translucent film behind the glass member, a light generating element having a configuration for conveying information when activated, the mirror arrangement functioning as an ordinary mirror when no voltage is applied to the light generating element such as an electroluminescent element while functioning as a light source or display panel when the voltage is applied to the light generating element, since the element energized emits light through the translucent aluminum film and the glass in front.
摘要翻译： 包括透明玻璃构件，玻璃构件后面的半透明膜的反射镜装置，具有用于在激活时传送信息的构造的发光元件，当没有电压施加到发光元件例如 当电压施加到发光元件时，由于被激发的元件通过半透明铝膜和前面的玻璃发光，所以电场发光元件同时用作光源或显示面板。
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公开(公告)号：US07329975B2
公开(公告)日：2008-02-12
申请号：US11586561
申请日：2006-10-26
IPC分类号： H01L41/053
CPC分类号： G01S7/521 , B06B1/0629 , H04R1/02
摘要： An ultrasonic sensor includes a plurality of converters and a protection component. The plurality of converters convert one of a received ultrasonic wave into an electric signal and an electric signal into an ultrasonic wave for transmission. The plurality of converters are juxtaposed. The protection component protects each of the converters.
摘要翻译： 超声波传感器包括多个转换器和保护部件。 多个转换器将接收到的超声波中的一个转换为电信号和电信号，以进行超声波传输。 多个转换器并置。 保护部件保护每个转换器。
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公开(公告)号：US07078238B2
公开(公告)日：2006-07-18
申请号：US10458631
申请日：2003-06-11
申请人： Yuichiro Murata , Inao Toyoda , Yasutoshi Suzuki , Hirofumi Uenoyama , Toshihisa Suzuki , Osamu Mochizuki , Kiyoshi Natsume
发明人： Yuichiro Murata , Inao Toyoda , Yasutoshi Suzuki , Hirofumi Uenoyama , Toshihisa Suzuki , Osamu Mochizuki , Kiyoshi Natsume
IPC分类号： H01L21/00
CPC分类号： B82Y25/00 , G01R33/093 , H01L27/22
摘要： Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.
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公开(公告)号：US20060043843A1
公开(公告)日：2006-03-02
申请号：US11208724
申请日：2005-08-23
IPC分类号： H01L41/053
CPC分类号： G01S7/521 , B06B1/0629 , H04R1/02
摘要： An ultrasonic sensor includes a plurality of converters and a protection component. The plurality of converters convert one of a received ultrasonic wave into an electric signal and an electric signal into an ultrasonic wave for transmission. The plurality of converters are juxtaposed. The protection component protects each of the converters.
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76.发明申请Micro device having micro system structure and method for manufacturing the same 有权具有微系统结构的微型器件及其制造方法公开(公告)号：US20060027904A1
公开(公告)日：2006-02-09
申请号：US11196352
申请日：2005-08-04
申请人： Yuta Hasebe , Toshiki Ito , Yasutoshi Suzuki
发明人： Yuta Hasebe , Toshiki Ito , Yasutoshi Suzuki
IPC分类号： H01L23/02
CPC分类号： B81B7/0012 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2924/16195 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A micro device having a micro system structure includes a protection film disposed on the micro system structure for protecting from a particle. The protection film includes a first protection film having a Vickers hardness equal to or larger than 2500 Hv or a nano indentation hardness equal to or larger than 13.64 GPa. The first protection film has a thickness in a range between 0.1 μm and 30 μm. The protection film has a total stress defined as a product of a film stress and a film thickness, and the total stress is equal to or smaller than 700 N/m.
摘要翻译： 具有微系统结构的微器件包括设置在微系统结构上用于保护颗粒的保护膜。 保护膜包括维氏硬度等于或大于2500Hv或纳米压痕硬度等于或大于13.64GPa的第一保护膜。 第一保护膜的厚度在0.1μm和30μm之间的范围内。 保护膜具有被定义为膜应力和膜厚度的乘积的总应力，总应力等于或小于700N / m。
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公开(公告)号：US06960487B2
公开(公告)日：2005-11-01
申请号：US10404073
申请日：2003-04-02
CPC分类号： G01L9/0055 , H01L24/83 , H01L2224/8384 , H01L2224/8389 , H01L2924/0133 , H01L2924/1305 , H01L2924/01026 , H01L2924/01027 , H01L2924/01028 , H01L2924/00
摘要： A method for manufacturing a dynamic quantity detection device includes bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer. Initially, a semiconductor chip is formed that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a processing circuit element used for a circuit that processes the electric quantity. Further, a bonding layer is placed on a stand. The semiconductor chip is then placed on the bonding layer and the semiconductor chip is bonded to the stand by sintering the bonding layer at 400° C. or lower in order to suppress a change in a characteristic of the processing circuit element.
摘要翻译： 一种用于制造动态量检测装置的方法包括使用接合层将包括用于检测动态量的检测元件的半导体芯片接合到支架。 首先，形成半导体芯片，其包括用于将要检测的动态量与电量相关联的检测元件和用于处理电量的电路所使用的处理电路元件。 此外，将接合层放置在支架上。 然后将半导体芯片放置在接合层上，并且通过在400℃或更低温度下烧结粘合层将半导体芯片接合到支架上，以便抑制处理电路元件的特性变化。
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78.发明授权Thermo pile infrared ray sensor manufactured with screen print and method thereof 失效用丝网印刷制造的热堆红外线传感器及其方法公开(公告)号：US06870086B2
公开(公告)日：2005-03-22
申请号：US10164603
申请日：2002-06-10
摘要： In a thermo pile infrared ray sensor, an opening portion is formed by etching a substrate from a second surface after an n-type poly-Si layer and a thin aluminium layer are formed so that first and second connection portions are formed by parts thereof. An infrared ray absorbent layer is formed on the substrate to cover the first connection portion with a screen print after the opening portion is formed.
摘要翻译： 在热桩红外线传感器中，在形成n型多晶硅层和薄铝层之后，通过从第二表面蚀刻衬底形成开口部分，使得第一和第二连接部分由其部分形成。 在形成开口部之后，在基板上形成有用于将丝网印刷物覆盖在第一连接部上的红外线吸收层。
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公开(公告)号：US06744258B2
公开(公告)日：2004-06-01
申请号：US10189565
申请日：2002-07-08
申请人： Seiichiro Ishio , Yasutoshi Suzuki , Hajime Ito , Yasuaki Makino , Norikazu Ohta , Keiichi Shimaoka , Hirofumi Funabashi
发明人： Seiichiro Ishio , Yasutoshi Suzuki , Hajime Ito , Yasuaki Makino , Norikazu Ohta , Keiichi Shimaoka , Hirofumi Funabashi
IPC分类号： G01R3112
CPC分类号： G01D3/08
摘要： In a capacitive sensor apparatus, a capacitive sensor includes a plurality of physical-quantity-detection capacitors each having a movable electrode and a fixed electrode. A conversion device operates for converting an output signal of the capacitive sensor into an apparatus output signal. Each of the physical-quantity-detection capacitors is selectively connected and disconnected to and from the conversion device. A determination is made as to whether or not each of the physical-quantity-detection capacitors fails in response to the sensor output signal. When it is determined that a first one of the physical-quantity-detection capacitors fails, the first one is disconnected from the conversion device and a second one of the physical-quantity-detection capacitors is connected to the conversion device.
摘要翻译： 在电容传感器装置中，电容式传感器包括多个物理量检测电容器，每个物理量检测电容器具有可动电极和固定电极。 转换装置用于将电容式传感器的输出信号转换成装置输出信号。 每个物理量检测电容器被选择性地连接到转换装置和从转换装置断开。 确定每个物理量检测电容器是否响应于传感器输出信号而失败。 当确定物理量检测电容器中的第一个电容器发生故障时，第一个物理量检测电容器与转换装置断开连接，并且第二个物理量检测电容器连接到转换装置。
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公开(公告)号：US06734671B2
公开(公告)日：2004-05-11
申请号：US10091592
申请日：2002-03-07
申请人： Yuichiro Murata , Inao Toyoda , Yasutoshi Suzuki , Hirofumi Uenoyama , Toshihisa Suzuki , Osamu Mochizuki , Kiyoshi Natsume
发明人： Yuichiro Murata , Inao Toyoda , Yasutoshi Suzuki , Hirofumi Uenoyama , Toshihisa Suzuki , Osamu Mochizuki , Kiyoshi Natsume
IPC分类号： G01R3309
CPC分类号： B82Y25/00 , G01R33/093 , H01L27/22
摘要： Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.
摘要翻译： 在由硅制成的衬底的绝缘表面上形成磁阻器件。 这些器件通过使用形成在衬底表面上的布线层的绝缘膜串联连接。 形成用于钝化的绝缘膜以覆盖器件和布线层。 通过有机膜在钝化绝缘膜上形成Ni-Fe合金的磁屏蔽层，用于缓解热应力以覆盖其中一个器件。 在从晶片去除包含磁阻器件和其他部件的传感器芯片之后，通过热处理将芯片通过Ag糊层结合到引线框架。 优选地，磁屏蔽层由Ni含量为69％以下的Ni-Fe合金制成。
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