A method for manufacturing a dynamic quantity detection device includes bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer. Initially, a semiconductor chip is formed that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a processing circuit element used for a circuit that processes the electric quantity. Further, a bonding layer is placed on a stand. The semiconductor chip is then placed on the bonding layer and the semiconductor chip is bonded to the stand by sintering the bonding layer at 400° C. or lower in order to suppress a change in a characteristic of the processing circuit element.