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    Reverse out valve for well treatment operations
    72.
    发明申请
    Reverse out valve for well treatment operations 有权
    逆流阀用于井处理操作

    公开(公告)号：US20070114043A1

    公开(公告)日：2007-05-24

    申请号：US11282514

    申请日：2005-11-18

    Applicant: William Richards ,  Andrew Penno

    Inventor： William Richards ,  Andrew Penno

    IPC: E21B33/12

    CPC classification number: E21B43/04 ,  E21B34/14 ,  Y10T137/86726

    Abstract: A reverse out valve (100) comprises an outer housing (120) and a mandrel (144) that form a bypass region (130) therebetween. The mandrel (144) includes a central flow path (164) with a valve seat (152) positioned therein and first and second side wall ports (148, 150). A valve element (168) is positioned in the central flow path (164). The valve element (168) and the valve seat (152) having a one way valve configuration that prevents downhole fluid flow and allows uphole fluid flow. The mandrel (144) is axially movable relative to the outer housing (120) between first and second positions. In the first position, a bypass passageway (184) is formed between the first and second side wall ports (148, 150) via the bypass region (130) thereby allowing bypass flow around the valve element (168) and the valve seat (152). In the second position, bypass flow is prevented.

    Abstract translation: 反向阀（100）包括在其间形成旁路区域（130）的外壳（120）和心轴（144）。 心轴（144）包括具有定位在其中的阀座（152）和第一和第二侧壁端口（148,150）的中心流动路径（164）。 阀元件（168）定位在中心流动路径（164）中。 阀元件（168）和阀座（152）具有防止井下流体流动并允许井上流体流动的单向阀构造。 心轴（144）可在第一和第二位置之间相对于外壳（120）轴向移动。 在第一位置，经由旁通区域（130）在第一和第二侧壁端口（148,150）之间形成旁通通道（184），从而允许围绕阀元件（168）和阀座（152）的旁路 ）。 在第二位置，防止旁路流动。

    Erosion resistant crossover for fracturing/gravel packing
    74.
    发明申请
    Erosion resistant crossover for fracturing/gravel packing 审中-公开
    用于压裂/砾石包装的防腐蚀交叉

    公开(公告)号：US20060213671A1

    公开(公告)日：2006-09-28

    申请号：US11078752

    申请日：2005-03-11

    Applicant: Liping Li ,  Syed Hamid ,  William Richards

    Inventor： Liping Li ,  Syed Hamid ,  William Richards

    IPC: E21B33/12

    CPC classification number: E21B43/045

    Abstract: An erosion resistant crossover which may be used in fracturing and/or gravel packing. In one aspect, a fluid delivery system for use in a subterranean well may comprise a fluid discharge apparatus including a flow passage, at least one discharge opening for discharging fluid from the flow passage to an exterior of the apparatus, and a flow diversion device operative to more evenly distribute flow through the opening by diverting fluid flow through the opening in a more upstream direction relative to fluid flow through the passage.

    Abstract translation: 可用于压裂和/或砾石包装的耐腐蚀交叉。 在一个方面，用于地下井的流体输送系统可以包括流体排放装置，其包括流动通道，用于将流体从流动通道排出到装置的外部的至少一个排出口，以及可操作的流动分流装置 通过相对于流经通道的流体流在更上游的方向上转移流体通过开口的流体流动通过开口更均匀地分布。

    Strained silicon, gate engineered Fermi-FETs
    77.
    发明申请
    Strained silicon, gate engineered Fermi-FETs 审中-公开
    应变硅，门极工程费米FET

    公开(公告)号：US20060138548A1

    公开(公告)日：2006-06-29

    申请号：US11295105

    申请日：2005-12-06

    Applicant: William Richards ,  Mike Shen

    Inventor： William Richards ,  Mike Shen

    IPC: H01L29/94

    CPC classification number: H01L21/28255 ,  H01L21/2807 ,  H01L29/1054 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7838

    Abstract: A field effect transistor includes a strained silicon channel in a substrate, source/drain regions in the substrate at opposite ends of the strained silicon channel, a gate insulating layer on the strained silicon channel, and a gate on the gate insulating layer. The doping of the strained silicon channel, the doping of the substrate and/or the depth of the strained silicon channel are configured to produce nearly zero vertical electric field in the gate insulating layer and in the strained silicon channel surface at a threshold voltage of the field effect transistor. Moreover, the gate is configured to provide a gate work function that is close to a mid-bandgap of silicon. Accordingly, a Fermi-FET with a strained silicon channel and a gate layer with a mid-bandgap work function are provided. Related fabrication methods using epitaxial growth also are described.

    Abstract translation: 场效应晶体管包括衬底中的应变硅沟道，在应变硅沟道的相对端处的衬底中的源极/漏极区域，应变硅沟道上的栅极绝缘层以及栅极绝缘层上的栅极。 应变硅沟道的掺杂，衬底的掺杂和/或应变硅沟道的深度被配置为在栅极绝缘层和应变硅沟道表面中在阈值电压下产生几乎为零的垂直电场 场效应晶体管。 此外，栅极被配置为提供接近硅的中间带隙的栅极功能。 因此，提供了具有应变硅沟道的费米FET和具有中带隙工作功能的栅极层。 还描述了使用外延生长的相关制造方法。

    Sand control screen assembly having fluid loss control capability and method for use of same
    79.
    发明申请
    Sand control screen assembly having fluid loss control capability and method for use of same 失效
    具有流体损失控制能力的砂控制组件及其使用方法

    公开(公告)号：US20060042795A1

    公开(公告)日：2006-03-02

    申请号：US10925166

    申请日：2004-08-24

    Applicant: William Richards

    Inventor： William Richards

    IPC: E21B43/04 ,  E21B43/00

    CPC classification number: E21B34/063 ,  E21B43/045 ,  E21B43/08 ,  E21B43/088

    Abstract: A sand control screen assembly (60) that is positionable within a wellbore includes a base pipe (62) having at least one opening (64) that allows fluid flow therethrough and a filter medium (66) positioned exteriorly of the base pipe (62) that selectively allows fluid flow therethrough and prevents particulate flow of a predetermined size therethrough. An isolation member (68) is positioned interiorly of the base pipe (62) forming an annulus (84) therewith. A one-way valve (86) is slidably operable within the annulus (84). The one-way valve (86) controls the flow of fluid through sand control screen assembly (60) such that fluid flow is selectively prevented from the interior to the exterior of the sand control screen assembly (60) but is allowed from the exterior to the interior of the sand control screen assembly (60).

    Abstract translation: 可定位在井眼内的防砂筛管组件（60）包括：基管（62），其具有允许流体流过其中的至少一个开口（64）;以及位于基管（62）外部的过滤介质（66） 其选择性地允许流体流过其中并防止通过其中的预定尺寸的颗粒流。 隔离构件（68）位于形成环形空间（84）的基管（62）的内部。 单向阀（86）可滑动地在环形空间（84）内操作。 单向阀（86）控制流体通过防砂筛管组件（60）的流动，使得流体流动被选择性地防止从砂控制筛组件（60）的内部到外部，但允许从外部到 防砂屏组件（60）的内部。

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