公开(公告)号：US20060138548A1

公开(公告)日：2006-06-29

申请号：US11295105

申请日：2005-12-06

申请人： William Richards ,  Mike Shen

发明人： William Richards ,  Mike Shen

IPC分类号： H01L29/94

CPC分类号： H01L21/28255 ,  H01L21/2807 ,  H01L29/1054 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7838

摘要： A field effect transistor includes a strained silicon channel in a substrate, source/drain regions in the substrate at opposite ends of the strained silicon channel, a gate insulating layer on the strained silicon channel, and a gate on the gate insulating layer. The doping of the strained silicon channel, the doping of the substrate and/or the depth of the strained silicon channel are configured to produce nearly zero vertical electric field in the gate insulating layer and in the strained silicon channel surface at a threshold voltage of the field effect transistor. Moreover, the gate is configured to provide a gate work function that is close to a mid-bandgap of silicon. Accordingly, a Fermi-FET with a strained silicon channel and a gate layer with a mid-bandgap work function are provided. Related fabrication methods using epitaxial growth also are described.

摘要翻译： 场效应晶体管包括衬底中的应变硅沟道，在应变硅沟道的相对端处的衬底中的源极/漏极区域，应变硅沟道上的栅极绝缘层以及栅极绝缘层上的栅极。 应变硅沟道的掺杂，衬底的掺杂和/或应变硅沟道的深度被配置为在栅极绝缘层和应变硅沟道表面中在阈值电压下产生几乎为零的垂直电场 场效应晶体管。 此外，栅极被配置为提供接近硅的中间带隙的栅极功能。 因此，提供了具有应变硅沟道的费米FET和具有中带隙工作功能的栅极层。 还描述了使用外延生长的相关制造方法。

公开(公告)号：US20070001199A1

公开(公告)日：2007-01-04

申请号：US11426494

申请日：2006-06-26

申请人： Mike Shen ,  William Richards

发明人： Mike Shen ,  William Richards

IPC分类号： H01L29/76

CPC分类号： H01L29/1041 ,  H01L21/28026 ,  H01L29/49 ,  H01L29/7833

摘要： Field effect transistor integrated circuits include field effect transistors in an integrated circuit substrate, such as a semiconductor substrate. A first one of the field effect transistors has a body effect that is substantially lower than that of a second one of the field effect transistors during operation of the first and second field effect transistors. The field effect transistors may be interconnected to form a circuit, and the body effect of the first field effect transistor is substantially lower than that of the second field effect transistor during operation of the circuit.

摘要翻译： 场效应晶体管集成电路包括诸如半导体衬底的集成电路衬底中的场效晶体管。 场效应晶体管中的第一个具有在第一和第二场效应晶体管的操作期间实质上比第二场效应晶体管低的效应。 场效应晶体管可以互连以形成电路，并且在电路操作期间第一场效应晶体管的体效应基本上低于第二场效应晶体管的体效应。

公开(公告)号：US20080191809A1

公开(公告)日：2008-08-14

申请号：US12098483

申请日：2008-04-07

申请人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

发明人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

IPC分类号： H03K3/03

CPC分类号： H03L7/0995 ,  H03K3/0315 ,  H03K5/133

摘要： An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

公开(公告)号：US20080186104A1

公开(公告)日：2008-08-07

申请号：US12098490

申请日：2008-04-07

申请人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

发明人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

IPC分类号： H03K3/03

CPC分类号： H03L7/0995 ,  H03K3/0315 ,  H03K5/133

摘要： An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

公开(公告)号：US08037431B2

公开(公告)日：2011-10-11

申请号：US12126076

申请日：2008-05-23

申请人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

发明人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

IPC分类号： G06F17/50 ,  H03K3/03

CPC分类号： H03L7/0995 ,  H03K3/0315 ,  H03K5/133

摘要： A design structure embodied in a machine readable medium used in a design process includes an interleaved voltage-controlled oscillator, including a ring circuit of main logic inverter gates; a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates; wherein each delay element comprises a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages; and a proportional section for regulating signal transmission through at least one logic inverter gate; at least one temperature compensation circuit responsive to a compensating voltage input that is proportional to temperature; an electronic circuit in communication with the temperature compensation circuit and configured to provide a voltage signal responsive to temperature; an amplifier in connection with the electronic circuit to amplify the voltage signal; and a DC offset generator configured to adjust the voltage of the amplified voltage signal.

摘要翻译： 体现在设计过程中使用的机器可读介质中的设计结构包括交错压控振荡器，包括主逻辑逆变器门的环形电路; 多个延迟元件，与所述主逻辑反相器门的选定序列并联连接; 其中每个延迟元件包括前馈部分，其包括用于响应于一个或多个控制电压来调节通过前馈元件的信号传输的控制; 以及用于调节通过至少一个逻辑反相器门的信号传输的比例部分; 响应于与温度成比例的补偿电压输入的至少一个温度补偿电路; 与所述温度补偿电路通信并且被配置为提供响应于温度的电压信号的电子电路; 与电子电路相连的放大器，用于放大电压信号; 以及配置成调整放大的电压信号的电压的DC偏移发生器。

公开(公告)号：US07786813B2

公开(公告)日：2010-08-31

申请号：US12098490

申请日：2008-04-07

申请人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

发明人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

IPC分类号： H03K3/03

CPC分类号： H03L7/0995 ,  H03K3/0315 ,  H03K5/133

摘要： An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

公开(公告)号：US07782146B2

公开(公告)日：2010-08-24

申请号：US12098483

申请日：2008-04-07

申请人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

发明人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

IPC分类号： H03K3/03

CPC分类号： H03L7/0995 ,  H03K3/0315 ,  H03K5/133

摘要： An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

摘要翻译： 公开了一种交错压控振荡器（VCO）。 VCO包括环形电路，其包括主逻辑反相器门的串联连接，与主逻辑反相器门的选定序列并联连接的多个延迟元件，至少一个温度补偿电路，包括与 一个或多个场效应晶体管，所述场效应晶体管响应于与温度成比例的补偿电压输入;以及电子电路，其与所述至少一个温度补偿电路进行信号通信，并且被配置为提供响应于温度的电压信号。 每个延迟元件包括前馈部分，其包括用于响应于一个或多个控制电压来调节通过前馈元件的信号传输的控制，以及比例部分，包括用于调节通过至少一个逻辑反相器门的信号传输的控制。

公开(公告)号：US20080222585A1

公开(公告)日：2008-09-11

申请号：US12126076

申请日：2008-05-23

申请人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

发明人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

IPC分类号： G06F17/50

CPC分类号： H03L7/0995 ,  H03K3/0315 ,  H03K5/133

摘要： A design structure embodied in a machine readable medium used in a design process includes an interleaved voltage-controlled oscillator, including a ring circuit of main logic inverter gates; a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates; wherein each delay element comprises a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages; and a proportional section for regulating signal transmission through at least one logic inverter gate; at least one temperature compensation circuit responsive to a compensating voltage input that is proportional to temperature; an electronic circuit in communication with the temperature compensation circuit and configured to provide a voltage signal responsive to temperature; an amplifier in connection with the electronic circuit to amplify the voltage signal; and a DC offset generator configured to adjust the voltage of the amplified voltage signal.

摘要翻译： 体现在设计过程中使用的机器可读介质中的设计结构包括交错压控振荡器，包括主逻辑逆变器门的环形电路; 多个延迟元件，与所述主逻辑反相器门的选定序列并联连接; 其中每个延迟元件包括前馈部分，其包括用于响应于一个或多个控制电压来调节通过前馈元件的信号传输的控制; 以及用于调节通过至少一个逻辑反相器门的信号传输的比例部分; 响应于与温度成比例的补偿电压输入的至少一个温度补偿电路; 与所述温度补偿电路通信并且被配置为提供响应于温度的电压信号的电子电路; 与电子电路相连的放大器，用于放大电压信号; 以及配置成调整放大的电压信号的电压的DC偏移发生器。

公开(公告)号：US07391277B2

公开(公告)日：2008-06-24

申请号：US11458753

申请日：2006-07-20

申请人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

发明人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

IPC分类号： H03B27/00

CPC分类号： H03L7/0995 ,  H03K3/0315 ,  H03K5/133

摘要： An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

摘要翻译： 公开了一种交错压控振荡器（VCO）。 VCO包括环形电路，其包括主逻辑反相器门的串联连接，与主逻辑反相器门的选定序列并联连接的多个延迟元件，至少一个温度补偿电路，包括与 一个或多个场效应晶体管，所述场效应晶体管响应于与温度成比例的补偿电压输入;以及电子电路，其与所述至少一个温度补偿电路进行信号通信，并且被配置为提供响应于温度的电压信号。 每个延迟元件包括前馈部分，其包括用于响应于一个或多个控制电压来调节通过前馈元件的信号传输的控制，以及比例部分，包括用于调节通过至少一个逻辑反相器门的信号传输的控制。

公开(公告)号：US20080018408A1

公开(公告)日：2008-01-24

申请号：US11458753

申请日：2006-07-20

申请人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

发明人： David W. Boerstler ,  Eskinder Hailu ,  Jieming Qi ,  Mike Shen

IPC分类号： H03K3/03

CPC分类号： H03L7/0995 ,  H03K3/0315 ,  H03K5/133

摘要： An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

摘要翻译： 公开了一种交错压控振荡器（VCO）。 VCO包括环形电路，其包括主逻辑反相器门的串联连接，与主逻辑反相器门的选定序列并联连接的多个延迟元件，至少一个温度补偿电路，包括与 一个或多个场效应晶体管，所述场效应晶体管响应于与温度成比例的补偿电压输入;以及电子电路，其与所述至少一个温度补偿电路进行信号通信，并且被配置为提供响应于温度的电压信号。 每个延迟元件包括前馈部分，其包括用于响应于一个或多个控制电压来调节通过前馈元件的信号传输的控制，以及比例部分，包括用于调节通过至少一个逻辑反相器门的信号传输的控制。