Abstract:
A display device according to the present invention includes a first substrate, a driving portion formed on the first substrate, a plurality of signal lines formed on the first substrate to transmit signals to the driving portion, a second substrate facing the first substrate, and a conductive member formed on the second substrate, wherein the driving portion overlaps with the conductive member, and the signal lines are disposed at a position outside a region of overlap of the conductive member. Accordingly, the capacitances between the signal lines may be substantially the same.
Abstract:
A pixel includes an OLED between a first power supply and a second power supply; a first transistor between the first power supply and the OLED, in which a gate electrode is connected to a first node; a second transistor between a first electrode of the first transistor and a data line, in which a gate electrode is connected to a current scanning line; a third transistor between a second electrode of the first transistor and the first node, in which a gate electrode is connected to the current scanning line or a control line; a fourth transistor between the second electrode of the first transistor and the OLED, in which a gate electrode is connected to a light emitting control line; and a fifth transistor between a connecting node of the fourth transistor and the OLED and the second power supply or a third power supply.
Abstract:
An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
Abstract:
Thermal sensors are disposed with OLEDs across a display of an electronic device to measure temperatures across the display surface. Thermal sensors may be used to create a temperature map across the display surface due to both the ambient environment and the internal environment of the electronic device. The thermal sensors may be disposed in the OLED layer, on a separate layer, or both. Thermal sensors may be disposed in a substantially 1:1 ratio with OLEDs or with zones of OLEDs. Both the temperature history and usage history for OLEDs may be recorded and processed to determine the age of each OLED. Controllers may adjust the driving strength of OLEDs or adjust the operation of components within the electronic device to compensate for aging or temperature based on the temperature map and age determination. Controllers may move static images from one part of the display to another less-aged part.
Abstract:
A display module including a substrate having a plurality of pixels, a data line that supplies a data signal to a pixel, a current supply line that supplies electric current to the pixel, a data driving circuit that supplies a data signal to the data line, and a gate driving circuit thereon. The plurality of pixels are arranged in a display area of the substrate, and each of the plurality of pixels include a light emitting device, a first thin film transistor connected to the data line that supplies the data signal, a second thin film transistor connected to the current supply line, and a capacitor. The light emitting device includes a first electrode layer connected to the second thin film transistor, an organic layer formed on the first electrode layer, and a second electrode layer formed on the organic layer.
Abstract:
By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.
Abstract:
Design criteria of display screens is provided that can be used in combination with particular inversion schemes and scanning orders of the display screens to reduce or eliminate visual artifacts that can be caused by the effects of capacitive coupling of voltage changes in one part of the display into other parts of the display. Using particular combinations of inversion schemes and scanning orders, together with particular design criteria for the display screen, can allow one type of effect, e.g., an increase or decrease in a brightness of a display pixel, caused by one type of coupling effect, such as a coupling between data lines, can be offset by the effect caused by another type of coupling effect, such as a coupling between pixel electrodes.
Abstract:
The number of photolithography steps used for manufacturing a transistor is reduced to less than the conventional one and a highly reliable semiconductor device is provided. The present invention relates to a semiconductor device including a circuit including a transistor having an oxide semiconductor layer over a first substrate and a second substrate fixed to the first substrate with a sealant. A closed space surrounded by the sealant, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air. The sealant surrounds at least the transistor and has a closed pattern shape. Further, the circuit is a driver circuit including a transistor having an oxide semiconductor layer.
Abstract:
By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.
Abstract:
An anti-Newton-ring film for effectively preventing generation of Newton rings in a resistive touch panel is provided.The anti-Newton-ring film is obtained, with the use of a liquid phase containing one or more polymers, one or more curable resin-precursors, and a solvent, through a step for forming a phase-separation structure by spinodal decomposition of (i) a plurality of polymers, (ii) a combination of a polymer and a curable resin-precursor, or (iii) a plurality of curable resin-precursors, from the liquid phase concurrent with evaporation of the solvent, and a step for curing the resin-precursor to form an anti-Newton-ring layer. In the film, the anti-Newton-ring layer has an uneven surface structure, isotropically transmits and scatters an incident light, shows a maximum value of a scattered light intensity at a scattering angle of 0.1 to 10°, and has a total light transmittance of 70 to 100%.