公开(公告)号：US06472333B2

公开(公告)日：2002-10-29

申请号：US09820439

申请日：2001-03-28

申请人： Li-Qun Xia ,  Paul Fisher ,  Margaret Lynn Gotuaco ,  Frederic Gaillard ,  Ellie Yieh

发明人： Li-Qun Xia ,  Paul Fisher ,  Margaret Lynn Gotuaco ,  Frederic Gaillard ,  Ellie Yieh

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76813 ,  H01L21/76828 ,  H01L21/76829

摘要： A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.

摘要翻译： 公开了一种形成用于集成电路制造工艺的低介电常数硅酸盐材料的方法。 低介电常数硅酸盐材料是通过使包含有机硅烷化合物，氧源和惰性气体的气体混合物反应而形成的。 此后，通过使包含硅源和碳源的气体混合物反应，在硅酸盐材料上形成碳化硅盖层。 当在随后的退火步骤中硬化时，碳化硅盖层保护下面的有机硅酸盐层不被开裂和剥离。

公开(公告)号：US06465372B1

公开(公告)日：2002-10-15

申请号：US09633495

申请日：2000-08-07

申请人： Li-Qun Xia ,  Tian-Hoe Lim ,  Frederic Gaillard ,  Ellie Yieh

发明人： Li-Qun Xia ,  Tian-Hoe Lim ,  Frederic Gaillard ,  Ellie Yieh

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31612 ,  H01L21/31633

摘要： A method for forming an insulation layer over a substrate. The method forms a carbon-doped silicon oxide layer by thermal chemical vapor deposition using an organosilane. The carbon-doped silicon oxide layer is subsequently cured and densified. In one embodiment, the cured film is densified in a nitrogen-containing plasma. The method is particularly suitable for deposition of low dielectric constant films, i.e., where k is less than or equal to 3.0. Low-k, carbon-doped silicon oxide methylsilane or di-, tri-, tetra-, or phenylmethylsilane. and ozone. The above method can be carried out in a substrate processing system having a process chamber; a substrate holder, a heater, a gas delivery system, and a power supply, all of which are coupled to a controller. The controller contains a memory having a computer-readable medium with a program embodied for directing operation of the system in accordance with above method.

摘要翻译： 一种在衬底上形成绝缘层的方法。 该方法通过使用有机硅烷的热化学气相沉积形成碳掺杂氧化硅层。 碳掺杂氧化硅层随后被固化和致密化。 在一个实施方案中，固化膜在含氮等离子体中致密化。 该方法特别适用于沉积低介电常数膜，即其中k小于或等于3.0。 低k，碳掺杂的氧化硅甲基硅烷或二，三，四或苯基甲基硅烷。 和臭氧。 上述方法可以在具有处理室的基板处理系统中进行; 衬底保持器，加热器，气体输送系统和电源，所有这些都耦合到控制器。 控制器包含具有计算机可读介质的存储器，该计算机可读介质具有根据上述方法指导系统操作的程序。

公开(公告)号：US06277200B1

公开(公告)日：2001-08-21

申请号：US09728718

申请日：2000-11-30

申请人： Li-Qun Xia ,  Ellie Yieh

发明人： Li-Qun Xia ,  Ellie Yieh

IPC分类号： C23C1600

摘要： A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.

公开(公告)号：US06177344B1

公开(公告)日：2001-01-23

申请号：US09199911

申请日：1998-11-25

申请人： Li-Qun Xia ,  Richard A. Conti ,  Maria Galiano ,  Ellie Yieh

发明人： Li-Qun Xia ,  Richard A. Conti ,  Maria Galiano ,  Ellie Yieh

IPC分类号： H01L214763

CPC分类号： H01L21/31051 ,  H01L21/3105 ,  H01L21/31625

摘要： A multistep method for planarizing a silicon oxide insulating layer such as a deposited borophosphosilicate glass (BPSG) layer. The method includes several different planarization stages. During an initial, pre-planarization stage, a substrate having a BPSG layer deposited over it is loaded into a substrate processing chamber. Then, during a first planarization stage after the pre-planarization stage, oxygen and hydrogen are flowed into the substrate processing chamber to form a steam ambient in said chamber and the substrate is heated in the steam ambient from a first temperature to a second temperature. The first temperature is below a reflow temperature of the BPSG layer and the second temperature is sufficient to reflow the layer. After the substrate is heated to the second temperature during a second planarization stage, the temperature of the substrate and the conditions within the substrate processing chamber are maintained at conditions sufficient to reflow the BPSG layer in the steam ambient. In a more preferred embodiment, the multistep planarization method also includes a third planarization stage, after the second stage. In the third planarization stage, the flow of hydrogen is stopped while the flow of oxygen is maintained, thereby forming an oxygen ambient in the substrate processing chamber. The substrate temperature is maintained in the oxygen ambient at a temperature above the reflow temperature of the BPSG layer. It is believed that this additional step minimizes the amount of moisture incorporated into the reflowed BPSG layer.

摘要翻译： 一种用于平坦化氧化硅绝缘层例如沉积的硼磷硅酸盐玻璃（BPSG）层的多步法。 该方法包括几个不同的平坦化阶段。 在初始预平坦化阶段期间，在其上沉积有BPSG层的衬底被加载到衬底处理室中。 然后，在预平坦化阶段之后的第一平坦化阶段期间，氧气和氢气流入基板处理室以在所述室中形成蒸汽环境，并且基板在蒸汽环境中从第一温度加热到第二温度。 第一温度低于BPSG层的回流温度，第二温度足以使该层回流。 在第二平坦化阶段将衬底加热到​​第二温度之后，衬底的温度和衬底处理室内的条件保持在足以在蒸汽环境中回流BPSG层的条件。 在更优选的实施例中，多级平面化方法还包括在第二级之后的第三平坦化级。 在第三平坦化阶段，在保持氧气流的同时停止氢的流动，从而在衬底处理室中形成氧环境。 在超过BPSG层的回流温度的温度下，将基板温度保持在氧环境中。 据信这个附加步骤使并入回流的BPSG层中的水分量最小化。

公开(公告)号：US20050158667A1

公开(公告)日：2005-07-21

申请号：US10761122

申请日：2004-01-20

申请人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul Naik ,  Li-Qun Xia ,  Ellie Yieh

发明人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul Naik ,  Li-Qun Xia ,  Ellie Yieh

IPC分类号： G03F7/00 ,  G03F7/36 ,  G03F7/42 ,  H01L21/02 ,  H01L21/311

CPC分类号： G03F7/427 ,  H01L21/02063 ,  H01L21/31138

摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.

摘要翻译： 可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。 该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

公开(公告)号：US06753258B1

公开(公告)日：2004-06-22

申请号：US09706298

申请日：2000-11-03

申请人： Frederic Gaillard ,  Li-Qun Xia ,  Ellie Yieh ,  Paul Fisher ,  Margaret Gotuaco

发明人： Frederic Gaillard ,  Li-Qun Xia ,  Ellie Yieh ,  Paul Fisher ,  Margaret Gotuaco

IPC分类号： H01L21302

CPC分类号： H01L21/76801 ,  H01L21/31608 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for processing a substrate to form a feature in low k dielectric materials. One aspect of the invention provides a method for processing a substrate including forming a feature definition in a dielectric material deposited on a surface of a substrate, depositing one or more conductive materials to fill at least a portion of the feature definition, planarizing the substrate surface to expose the dielectric material, removing at least a portion of the dielectric material, and depositing a low k dielectric material.

摘要翻译： 一种用于处理基底以在低k电介质材料中形成特征的方法和装置。 本发明的一个方面提供一种处理衬底的方法，包括在沉积在衬底的表面上的电介质材料中形成特征定义，沉积一种或多种导电材料以填充特征定义的至少一部分，平坦化衬底表面 以暴露电介质材料，去除介电材料的至少一部分，以及沉积低k电介质材料。

公开(公告)号：US06680164B2

公开(公告)日：2004-01-20

申请号：US10006563

申请日：2001-11-30

申请人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul B. Naik ,  Li-Qun Xia ,  Ellie Yieh

发明人： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul B. Naik ,  Li-Qun Xia ,  Ellie Yieh

IPC分类号： G03F742

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01L21/31138

摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.

摘要翻译： 可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。 该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

公开(公告)号：US06569257B1

公开(公告)日：2003-05-27

申请号：US09710357

申请日：2000-11-09

申请人： Huong Thanh Nguyen ,  Michael Barnes ,  Li-Qun Xia ,  Ellie Yieh

发明人： Huong Thanh Nguyen ,  Michael Barnes ,  Li-Qun Xia ,  Ellie Yieh

IPC分类号： B08B300

CPC分类号： H01J37/32862 ,  C23C16/4405

摘要： A method for cleaning silicon carbide and/or organosilicate layers from interior surfaces of a process chamber is disclosed. In one aspect, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of a process chamber by treating it with a hydrogen/fluorine-based plasma. In another aspect, silicon carbide and/or organosilicate layer are cleaned from interior surfaces of the process chamber by treating it with a hydrogen-based plasma followed by a fluorine-based plasma. Alternatively, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of the chamber by treating it with a fluorine-based plasma followed by a hydrogen-based plasma.

摘要翻译： 公开了一种从处理室的内表面清洁碳化硅和/或有机硅酸盐层的方法。 在一个方面，通过用氢/氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。 另一方面，通过用基于氢的等离子体处理它，随后用氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。 或者，通过用氟基等离子体处理，然后用氢基等离子体来清洗碳化硅和/或有机硅酸盐层，从室的内表面清洗。

公开(公告)号：US06500773B1

公开(公告)日：2002-12-31

申请号：US09723886

申请日：2000-11-27

申请人： Frederic Gaillard ,  Li-Qun Xia ,  Ellie Yieh

发明人： Frederic Gaillard ,  Li-Qun Xia ,  Ellie Yieh

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/32139 ,  H01L21/76807

摘要： A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by reacting a gas mixture comprising a phenyl-based alkoxysilane compound. The gas mixture may be reacted by applying an electric field thereto. The gas mixture may optionally include an organosilane compound as well as an oxidizing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an anti-reflective coating (ARC). In another integrated circuit fabrication process, the organosilicate layer is used as a hardmask. In yet another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.

摘要翻译： 公开了形成有机硅酸盐层的方法。 有机硅酸盐层通过使包含苯基烷氧基硅烷化合物的气体混合物反应而形成。 可以通过向其施加电场而使气体混合物反应。 气体混合物可以任选地包括有机硅烷化合物以及氧化气体。 有机硅酸盐层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，有机硅酸盐层用作抗反射涂层（ARC）。 在另一集成电路制造工艺中，有机硅酸盐层用作硬掩模。 在又一集成电路制造工艺中，有机硅酸盐层被结合到镶嵌结构中。

公开(公告)号：US06261975B1

公开(公告)日：2001-07-17

申请号：US09262782

申请日：1999-03-04

申请人： Li-Qun Xia ,  Francimar Campana ,  Ellie Yieh

发明人： Li-Qun Xia ,  Francimar Campana ,  Ellie Yieh

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31051 ,  H01L21/31625 ,  H01L21/31629

摘要： A method for improving the reflow characteristics of a BPSG film. According to the method, a fluorine- or other halogen-doped BPSG layer is deposited over a substrate and reflowed using a rapid thermal pulse (RTP) method. The use of such an RTP reflow method results in superior reflow characteristics as compared to a 20-40 minute conventional furnace reflow process. The inventors discovered that reflowing FBPSG films in a conventional furnace may result in the highly mobile fluorine atoms diffusing from the film prior to completion of the anneal. Thus, the FBPSG layer loses the improved reflow characteristics provided by the incorporation of fluorine into the film. The RTP reflow reflows the film in a minimal amount of time (e.g., 10-90 seconds depending on the temperature used to reflow the layer and the degree of planarization required among other factors). Thus, the fluorine atoms within the FBPSG layer do not have sufficient time to migrate from the layer even if the layer is deposited over a PETEOS oxide or similar layer.

摘要翻译： 一种改善BPSG膜的回流特性的方法。 根据该方法，将氟或其它卤素掺杂的BPSG层沉积在衬底上并使用快速热脉冲（RTP）方法回流。 与20-40分钟的常规炉回流工艺相比，使用这种RTP回流方法导致优异的回流特性。 本发明人发现，在常规炉中回流FBPSG膜可能导致高度可移动的氟原子在退火完成之前从膜扩散。 因此，FBPSG层失去了通过将氟结合到膜中而提供的改进的回流特性。 RTP回流以最小的时间（例如10-90秒，取决于用于回流层的温度和其他因素所需的平坦化程度）来回流薄膜。 因此，即使该层沉积在PETEOS氧化物或类似层上，FBPSG层内的氟原子也不具有从该层迁移的足够时间。