发明授权
US06680164B2 Solvent free photoresist strip and residue removal processing for post etching of low-k films
失效
无溶剂的光致抗蚀剂条和残留物去除处理用于低k膜的后蚀刻
- 专利标题： Solvent free photoresist strip and residue removal processing for post etching of low-k films
- 专利标题（中）： 无溶剂的光致抗蚀剂条和残留物去除处理用于低k膜的后蚀刻
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申请号： US10006563申请日： 2001-11-30
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公开(公告)号： US06680164B2公开(公告)日： 2004-01-20
- 发明人: Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul B. Naik , Li-Qun Xia , Ellie Yieh
- 申请人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul B. Naik , Li-Qun Xia , Ellie Yieh
- 主分类号： G03F742
- IPC分类号： G03F742
摘要：
A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
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