公开(公告)号：US11532800B2

公开(公告)日：2022-12-20

申请号：US17008779

申请日：2020-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Su Kim ,  Kun Su Park ,  Tae Ho Kim ,  Eun Joo Jang ,  Dae Young Chung

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

Abstract: A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about 10 nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.

公开(公告)号：US20220302402A1

公开(公告)日：2022-09-22

申请号：US17696956

申请日：2022-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Sohn ,  Eun Joo Jang ,  Tae Hyung Kim ,  Hyo Sook Jang

IPC: H01L51/50

Abstract: An electroluminescent display device includes first and second electrode facing each other; and a quantum dot emission layer disposed between the first and second electrodes, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the red emission layer includes red light emitting quantum dots, the green emission layer includes green light emitting quantum dots, the blue emission layer includes blue light emitting quantum dots, and wherein the blue emission layer is configured to exhibit first emission spectrum including a blue luminescent peak and a first luminescent peak different from the blue luminescent peak, wherein the green emission layer is configured to exhibit a second emission spectrum including a green luminescent peak and a second luminescent peak different from the green luminescent peak.

公开(公告)号：US11421151B2

公开(公告)日：2022-08-23

申请号：US15821007

申请日：2017-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Oul Cho ,  Jooyeon Ahn ,  Eun Joo Jang ,  Dae Young Chung ,  Hyun A Kang ,  Tae Hyung Kim ,  Yun Sung Woo ,  Jeong Hee Lee ,  Shin Ae Jun

IPC: C09K11/02 ,  H01L51/50 ,  H05B33/14 ,  C09K11/70 ,  C09K11/88 ,  F21V8/00 ,  C09K11/06 ,  H01L51/00 ,  B82Y20/00 ,  B82Y40/00

Abstract: A light emitting device including a semiconductor nanocrystal and a ligand bound to a surface of the semiconductor nanocrystal, wherein the ligand includes an organic thiol ligand or a salt thereof and a polyvalent metal compound including a metal including Zn, In, Ga, Mg, Ca, Sc, Sn, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Sr, Y, Zr, Nb, Mo, Cd, Ba, Au, Hg, Tl, or a combination thereof, and a display device including the light emitting device.

公开(公告)号：US11365348B2

公开(公告)日：2022-06-21

申请号：US16245653

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Seok Park ,  Eun Joo Jang ,  Shin Ae Jun ,  Nayoun Won ,  Jooyeon Ahn ,  Sung Woo Kim

IPC: C09K11/70 ,  C09K11/02 ,  H01L27/32 ,  G02F1/13357 ,  F21V8/00 ,  C09K11/88 ,  H05B33/14

Abstract: A quantum dot includes a core including a first semiconductor nanocrystal and a multi-layered shell disposed on the core and including at least two layers, a production method thereof, and an electronic device including the same. The quantum dot does not include cadmium; the first semiconductor nanocrystal includes a Group III-V compound, the multi-layered shell includes a first layer surrounding at least a portion of a surface of the core, the first layer including a second semiconductor nanocrystal, the second semiconductor nanocrystal including a Group II-V compound, and a second layer disposed on the first layer, the second layer including a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising a composition different from that of the second semiconductor nanocrystal.

公开(公告)号：US11355583B2

公开(公告)日：2022-06-07

申请号：US15659758

申请日：2017-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yongwook Kim ,  Eun Joo Jang ,  Jihyun Min

IPC: H01L29/06 ,  C09K11/02 ,  C09K11/70 ,  H01L33/18 ,  B82Y10/00 ,  B82Y40/00

Abstract: A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn2+, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn2+, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.

公开(公告)号：US11316079B2

公开(公告)日：2022-04-26

申请号：US16546439

申请日：2019-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Jihyun Min ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H01L33/50 ,  C09K11/88 ,  H01L31/0232 ,  H01L31/0384 ,  H01L31/055 ,  H01L21/02 ,  C09K11/02 ,  C09K11/70 ,  H01L31/105 ,  H01L33/08 ,  F21V8/00 ,  G02F1/13357 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/06 ,  G02F1/1335

Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

公开(公告)号：US11280953B2

公开(公告)日：2022-03-22

申请号：US16796207

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hyung Kim ,  Jihyun Min ,  Yongwook Kim ,  Eun Joo Jang

IPC: C09K11/66 ,  C09K11/88 ,  C09K11/61 ,  C09K11/55 ,  G02F1/1335 ,  F21V8/00 ,  C09K11/70

Abstract: An electronic device includes, a light source having a peak emission at a wavelength between about 440 nm to about 480 nm; and a photoconversion layer disposed on the light source, wherein the photoconversion layer includes a first quantum dot which emits red light and a second quantum dot which emits green light, wherein at least one of the first quantum dot and the second quantum dot has a perovskite crystal structure and includes a compound represented by Chemical Formula 1: AB′X3+α  Chemical Formula 1 wherein A is a Group IA metal, NR4+, or a combination thereof, B′ is a Group IVA metal, X is a halogen, BF4−, or a combination thereof, and α is 0 to 3.

公开(公告)号：US11251390B2

公开(公告)日：2022-02-15

申请号：US16851276

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Dae Young Chung ,  Kwanghee Kim ,  Eun Joo Jang ,  Tae Hyung Kim ,  Hongkyu Seo ,  Heejae Lee ,  Jaejun Chang

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

公开(公告)号：US11171299B2

公开(公告)日：2021-11-09

申请号：US16296505

申请日：2019-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongkyu Seo ,  Eun Joo Jang ,  Moon Gyu Han ,  Tae Ho Kim ,  Dae Young Chung

IPC: H01L51/50 ,  C09K11/88 ,  H01L51/56 ,  B82Y20/00

Abstract: A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.

公开(公告)号：US11171291B2

公开(公告)日：2021-11-09

申请号：US16372861

申请日：2019-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Sik Yoon ,  Moon Gyu Han ,  Tae Ho Kim ,  Eun Joo Jang ,  Hongkyu Seo

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52

Abstract: An electroluminescent device and including a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, wherein the emission layer includes a quantum dot and a first electron transporting material represented by Chemical Formula 1; a hole transport layer disposed between the emission layer and the first electrode; and an electron transport layer disposed between the emission layer and the second electrode: wherein, the definitions of groups and variables in Chemical Formula 1 are the same as described in the specification.