公开(公告)号：US09419044B2

公开(公告)日：2016-08-16

申请号：US14255535

申请日：2014-04-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Zhenhong Fu ,  Duli Mao ,  Eric A. G. Webster ,  Sing-Chung Hu ,  Dyson H. Tai

IPC: H01L27/00 ,  H01J40/14 ,  H01L27/146 ,  H01L21/00 ,  H01L31/18 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14689

Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.

Abstract translation: 像素单元包括设置在半导体衬底中的存储晶体管。 存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。 传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 转移晶体管包括设置在半导体衬底上的转移栅极。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 输出晶体管包括设置在半导体衬底上的输出门。

公开(公告)号：US20160218132A1

公开(公告)日：2016-07-28

申请号：US14606416

申请日：2015-01-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Xianmin Yi ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14643

Abstract: A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.

Abstract translation: 具有存储区域的存储晶体管设置在半导体材料中。 栅电极设置在靠近存储区的中间层的底侧，并且介电层设置在存储区和栅电极之间。 光隔离结构设置在中间层中，光隔离结构从中间层的顶侧延伸到栅电极。 光学隔离结构也邻接栅电极的周边并与栅电极接触。 封盖层靠近中间层的顶侧设置，并且封盖层覆盖由光学隔离结构包围的体积。

公开(公告)号：US09304741B2

公开(公告)日：2016-04-05

申请号：US13867979

申请日：2013-04-22

Applicant: OmniVision Technologies, Inc.

Inventor： Dominic Massetti ,  Gang Chen

IPC: G01R29/26 ,  G06F7/58

CPC classification number: G06F7/582 ,  G01R29/26 ,  G06F7/588

Abstract: Techniques and mechanisms for generating a random number. In an embodiment, a first signal is received from a first cell including a first source follower transistor. Circuit logic detects for a pulse of the first signal and, in response to the pulse, generates a signal indicating detection of a first random telegraph noise event in the first source follower transistor. In another embodiment, a first count update is performed in response to the indicated detection of the first random telegraph noise event. The first count update is one basis for generation of a number corresponding to a plurality of random telegraph noise events.

Abstract translation: 用于生成随机数的技术和机制。 在一个实施例中，从包括第一源极跟随器晶体管的第一单元接收第一信号。 电路逻辑检测第一信号的脉冲，并且响应于脉冲，产生指示检测第一源极跟随器晶体管中的第一随机电报噪声事件的信号。 在另一实施例中，响应于所指示的第一随机电报噪声事件的检测，执行第一计数更新。 第一计数更新是用于生成与多个随机电报噪声事件相对应的数字的一个基础。

公开(公告)号：US20160086999A1

公开(公告)日：2016-03-24

申请号：US14494960

申请日：2014-09-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Dajiang Yang ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.

Abstract translation: 图像传感器包括靠近第一半导体层的前侧设置的多个光电二极管，以响应于被引导到第一半导体层的前侧的光积累图像电荷。 多个钉扎孔设置在第一半导体层中。 钉扎井分离包括在多个光电二极管中的各个光电二极管。 多个介电层设置在第一半导体层的背面附近。 电介质层被调谐，使得具有基本上等于包含在第一半导体层的前端的光的第一波长的波长的光从电介质层反射回多个光电二极管中相应的一个设置在接近 第一半导体层的前方。

公开(公告)号：US20150303235A1

公开(公告)日：2015-10-22

申请号：US14255535

申请日：2014-04-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Zhenhong Fu ,  Duli Mao ,  Eric A. G. Webster ,  Sing-Chung Hu ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14689

Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.

Abstract translation: 像素单元包括设置在半导体衬底中的存储晶体管。 存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。 传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 转移晶体管包括设置在半导体衬底上的转移栅极。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 输出晶体管包括设置在半导体衬底上的输出门。

公开(公告)号：US09147776B2

公开(公告)日：2015-09-29

申请号：US14331646

申请日：2014-07-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/103

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the first polarity charge layer.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和第一极性电荷层之间的光电二极管区域之上。

公开(公告)号：US20150271377A1

公开(公告)日：2015-09-24

申请号：US14222901

申请日：2014-03-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jin Li ,  Yin Qian ,  Gang Chen ,  Dyson H. Tai

IPC: H04N5/232 ,  H04N5/372

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14649

Abstract: An image sensor includes a pixel array with a plurality of pixels arranged in a semiconductor layer. A color filter array including a plurality of groupings of filters is disposed over the pixel array. Each filter is optically coupled to a corresponding one of the plurality pixels. Each one of the plurality of groupings of filters includes a first, a second, a third, and a fourth filter having a first, a second, the second, and a third color, respectively. A metal layer is disposed over the pixel array and is patterned to include a metal mesh having mesh openings with a size and pitch to block incident light having a fourth color from reaching the corresponding pixel. The metal layer is patterned to include openings without the metal mesh to allow the incident light to reach the other pixels.

Abstract translation: 图像传感器包括具有布置在半导体层中的多个像素的像素阵列。 包括多个滤光器组的滤色器阵列设置在像素阵列上。 每个滤光器光耦合到多个像素中的对应的一个。 多个分组滤波器中的每一个分别包括具有第一，第二，第二和第三颜色的第一，第二，第三和第四滤波器。 金属层设置在像素阵列上方并且被图案化以包括具有尺寸和间距的网孔的金属网，以阻挡具有第四颜色的入射光到达相应的像素。 金属层被图案化以包括没有金属网的开口，以允许入射光到达其它像素。

公开(公告)号：US20150270302A1

公开(公告)日：2015-09-24

申请号：US14222833

申请日：2014-03-24

Applicant: Omnivision Technologies, Inc.

Inventor： Jin Li ,  Yin Qian ,  Gang Chen ,  Dyson H. Tai ,  Dajiang Yang

IPC: H01L27/146 ,  G02B13/00

CPC classification number: H01L27/14627 ,  G02B13/0015 ,  H01L27/14643

Abstract: An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses.

Abstract translation: 图像传感器包括布置在半导体衬底中的多个感光器件。 平面层设置在半导体衬底中的多个光敏器件上。 由透镜材料构成的多个第一微透镜布置在平面层上的第一透镜区域中。 由透镜材料构成的多个透镜屏障布置在平面层上以提供在平面层上限定第二透镜区域的边界。 由透镜材料构成的多个第二微透镜形成在由平面层上限定第二透镜区域的多个透镜屏障提供的边界内。 在多个第二微透镜的回流处理之后，多个透镜屏障与相应的第二微透镜集成。

公开(公告)号：US20150163418A1

公开(公告)日：2015-06-11

申请号：US14097843

申请日：2013-12-05

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dyson Hsinchih Tai

IPC: H04N5/33 ,  H04N9/04

CPC classification number: H04N5/332 ,  H04N5/23245 ,  H04N9/045

Abstract: An image sensor for capturing both visible light images and infrared light images includes a semiconductor substrate having length, width, and height, a plurality of visible light photodetectors disposed in the semiconductor substrate, and a plurality of combination light photodetectors disposed in the semiconductor substrate. Each of the plurality of visible light photodetectors has a respective depth in the height direction, and each of the plurality of combination light photodetectors has a respective depth in the height direction that is greater than the respective depth of each of the plurality of visible light photodetectors.

Abstract translation: 用于捕获可见光图像和红外光图像的图像传感器包括具有长度，宽度和高度的半导体衬底，设置在半导体衬底中的多个可见光光电检测器和设置在半导体衬底中的多个组合光电检测器。 多个可见光光电检测器中的每一个在高度方向具有相应的深度，并且多个组合光检测器中的每一个在高度方向上具有大于多个可见光检测器中的每一个的相应深度的相应深度 。

公开(公告)号：US20150097213A1

公开(公告)日：2015-04-09

申请号：US14046645

申请日：2013-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14656 ,  H01L27/14685

Abstract: Embodiments of an apparatus comprising a pixel array including a plurality of pixels formed in a substrate having a front surface and a back surface, each pixel including a photosensitive region formed at or near the front surface and extending into the substrate a selected depth from the front surface. A filter array is coupled to the pixel array, the filter array including a plurality of individual filters each optically coupled to a corresponding photosensitive region, and a vertical overflow drain (VOD) is positioned in the substrate between the back surface and the photosensitive region of at least one pixel in the array.

Abstract translation: 一种装置的实施例，包括像素阵列，该像素阵列包括形成在具有前表面和后表面的衬底中的多个像素，每个像素包括形成在前表面处或附近的感光区域，并从前面延伸到选定的深度 表面。 滤波器阵列耦合到像素阵列，滤光器阵列包括多个单独的滤光器，每个滤光器光学耦合到相应的感光区域，垂直溢流漏极（VOD）位于基板的背面和感光区域之间 阵列中至少有一个像素。