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    Method of manufacturing a semiconductor device having an organic thin film transistor
    61.
    发明申请
    Method of manufacturing a semiconductor device having an organic thin film transistor 审中-公开
    制造具有有机薄膜晶体管的半导体器件的方法

    公开(公告)号：US20060216872A1

    公开(公告)日：2006-09-28

    申请号：US11209612

    申请日：2005-08-24

    申请人： Tadashi Arai ,  Shinichi Saito

    发明人： Tadashi Arai ,  Shinichi Saito

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L51/0541 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/105

    摘要： Since positional displacement occurs in a case of using a printing method, an electrode substrate in which a lower electrode and an upper electrode are accurately positioned by way of an insulator could not be formed. Use of a photomask for positional alignment increases the cost outstandingly. According to the present invention, since the lower electrode is utilized as a photomask for positionally alignment with the upper electrode, positional displacement does not occur even by the use of the printing method. Accordingly, a semiconductor device such as a flexible substrate using the organic semiconductor can be formed at a reduced cost by using a printing method.

    摘要翻译： 由于在使用印刷方法的情况下发生位置位移，所以不能形成其中下电极和上电极通过绝缘体精确定位的电极基板。 使用光掩模进行位置对齐可显着增加成本。 根据本发明，由于下电极用作与上电极位置对准的光掩模，因此即使使用印刷方法也不会发生位置偏移。 因此，可以通过使用印刷方法以降低的成本形成诸如使用有机半导体的柔性基板的半导体器件。

    Semiconductor device and manufacturing method thereof
    62.
    发明授权
    Semiconductor device and manufacturing method thereof 失效

    公开(公告)号：US07112833B2

    公开(公告)日：2006-09-26

    申请号：US10788278

    申请日：2004-03-01

    申请人： Yasuhiro Shimamoto ,  Shinichi Saito ,  Shimpei Tsujikawa

    发明人： Yasuhiro Shimamoto ,  Shinichi Saito ,  Shimpei Tsujikawa

    IPC分类号： H01L29/76 ,  H01L21/336

    CPC分类号： H01L21/28202 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659

    摘要： The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.1 or higher is formed at the interface between a semiconductor substrate and an alumina film. By so doing, a gate insulator composed of the silicon oxynitride film and the alumina film is constituted. The silicon oxynitride film is formed by performing a thermal treatment of a silicon oxide film formed on the semiconductor substrate in a NO or N2O atmosphere. In this manner, the fixed charges in the silicon oxynitride film are set to 5×1012 cm−2 or less, and the fixed charges in the interface between the silicon oxynitride film and the alumina film are set to 5×1012 cm−2 or more.

    Pyridine compound and liquid crystalline composition
    64.
    发明授权
    Pyridine compound and liquid crystalline composition 有权
    吡啶化合物和液晶组合物

    公开(公告)号：US6045720A

    公开(公告)日：2000-04-04

    申请号：US205613

    申请日：1998-12-04

    申请人： Ryushi Shundo ,  Shinichi Saito ,  Eiji Okabe ,  Hideo Saito

    发明人： Ryushi Shundo ,  Shinichi Saito ,  Eiji Okabe ,  Hideo Saito

    IPC分类号： G02F1/13 ,  C07D213/26 ,  C07D213/30 ,  C07D213/55 ,  C09K19/34 ,  C07D213/06

    CPC分类号： C09K19/3444 ,  C07D213/55 ,  Y02P20/55

    摘要： A compound expressed by the following formula (1) and a liquid crystalline composition with using it are provided: ##STR1## wherein, either one of rings A, B and C denotes ##STR2## remaining two of them denote each independently ##STR3## R denotes an alkyl group or an alkoxy group with 4-16 carbon atoms, R* denotes ##STR4## in which, R.sub.1 denotes CH.sub.3, CF.sub.3, CH.sub.2 F or CHF.sub.2, R.sub.2 denotes an alkyl group with 1-10 carbon atoms and m denotes 2-12.The said compound exhibits a ferroelectric liquid crystalline phase and an antiferroelectric liquid crystalline phase by itself.

    摘要翻译： 提供由下式（1）表示的化合物和使用该化合物的液晶组合物：其中，环A，B和C中的任一个表示其中两个独立地表示，R表示烷基或烷氧基， 4-16个碳原子，R *表示其中，R1表示CH 3，CF 3，CH 2 F或CHF 2，R 2表示具有1-10个碳原子的烷基，m表示2-12。 所述化合物本身显示出铁电液晶相和反铁电液晶相。

    Probe card with connector
    65.
    发明授权
    Probe card with connector 失效
    带连接器的探头卡

    公开(公告)号：US5969535A

    公开(公告)日：1999-10-19

    申请号：US932154

    申请日：1997-09-17

    申请人： Shinichi Saito

    发明人： Shinichi Saito

    IPC分类号： G01R1/073 ,  G01R1/067 ,  G01R31/28 ,  H01L21/66 ,  G01R31/02

    CPC分类号： G01R31/2886 ,  G01R1/06772

    摘要： An improved probe card with connector includes a probe card and a detachable ring plate that includes at least one RF coaxial connector. The ring plate is secured to the probe card, via at least one stud. To secure the stud to the ring plate and the probe card, a screw or the like may be used. The RF coaxial connector on the ring plate is electrically connected, via a coaxial cable, to a coaxial connector which is positioned on the surface of the probe card.

    摘要翻译： 具有连接器的改进的探针卡包括探针卡和包括至少一个RF同轴连接器的可拆卸环板。 环板通过至少一个螺柱固定到探针卡上。 为了将螺柱固定到环板和探针卡上，可以使用螺钉等。 环形板上的RF同轴连接器通过同轴电缆电连接到位于探针卡表面上的同轴连接器。

    Process for the production of ethylene-propylene block copolymers
    68.
    发明授权
    Process for the production of ethylene-propylene block copolymers 失效
    用于生产乙烯 - 丙烯嵌段共聚物的方法

    公开(公告)号：US4066718A

    公开(公告)日：1978-01-03

    申请号：US730742

    申请日：1976-10-08

    申请人： Shinichi Saito ,  Asaya Okaue ,  Kazuo Baba ,  Shigeo Tanaka

    发明人： Shinichi Saito ,  Asaya Okaue ,  Kazuo Baba ,  Shigeo Tanaka

    IPC分类号： C08F297/00 ,  C08F297/08

    CPC分类号： C08F297/083

    摘要： A method for the continuous production of crystalline ethylene-propylene block copolymers containing propylene as the major component and having excellent physical properties as that by a batch process in a slurry-phase by homopolymerizing propylene and then copolymerizing ethylene and propylene in the presence of an inert hydrocarbon solvent and a stereoregular polymerization catalyst in polymerization vessels connected in series, which is characterized by homopolymerizing propylene in three polymerization vessels, wherein the inner pressure of the vessels is decreased in order so as to make the inner-pressure difference between each consecutive two vessels from 1 to 3 kg/cm.sup.2, and then copolymerizing ethylene and propylene in at least two polymerization vessels, the resulting slurry being transferred from one vessel to the next vessel by the inner-pressure difference between the vessels without using a transferring pump in the homopolymerization step and being pressure-transferred to at least one vessel by using a transferring pump for raising the pressure in the copolymerization step.

    Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method
    69.
    发明授权
    Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method 有权
    硅发光二极管，硅光晶体管，硅激光器及其制造方法

    公开(公告)号：US08436333B2

    公开(公告)日：2013-05-07

    申请号：US11790283

    申请日：2007-04-24

    申请人： Shinichi Saito ,  Digh Hisamoto ,  Tadashi Arai ,  Takahiro Onai

    发明人： Shinichi Saito ,  Digh Hisamoto ,  Tadashi Arai ,  Takahiro Onai

    IPC分类号： H01L29/06

    CPC分类号： H01L33/34 ,  H01S5/3224

    摘要： A light-emitting device according to the present invention includes a first electrode unit for injecting an electron, a second electrode unit for injecting a hole, and light-emitting units and electrically connected to the first electrode unit and the second electrode unit respectively, wherein the light-emitting units and are formed of single-crystal silicon, the light-emitting units and having a first surface (topside surface) and a second surface (underside surface) opposed to the first surface, plane orientation of the first and second surfaces being set to a (100) plane, thicknesses of the light-emitting units and in a direction orthogonal to the first and second surfaces being made extremely thin.

    摘要翻译： 根据本发明的发光器件包括用于注入电子的第一电极单元，用于注入孔的第二电极单元和发光单元，并分别与第一电极单元和第二电极单元电连接，其中 所述发光单元由单晶硅形成，所述发光单元具有与所述第一表面相对的第一表面（顶侧表面）和第二表面（下表面），所述第一表面和所述第二表面 设置为（100）面时，发光单元的厚度和与第一表面和第二表面正交的方向的厚度非常薄。