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公开(公告)号:US20210072647A1
公开(公告)日:2021-03-11
申请号:US16623647
申请日:2018-05-14
Applicant: ASML Netherlands B.V.
Inventor: Arie Jeffrey DEN BOEF , Patricius Aloysius Jacobus TINNEMANS , Haico Victor KOK , William Peter VAN DRENT , Sebastianus Adrianus GOORDEN
IPC: G03F7/20
Abstract: The invention relates to a sensor (SE) comprising: —a radiation source (LS) to emit radiation (LI) having a coherence length towards a sensor target (GR); and —a polarizing beam splitter (PBS) to split radiation diffracted by the sensor target into radiation with a first polarization state and radiation with a second polarization state, wherein the first polarization state is orthogonal to the second polarization state, and wherein the sensor is configured such that after passing the polarizing beam splitter radiation with the first polarization state has an optical path difference relative to radiation with the second polarization state that is larger than the coherence length.
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62.
公开(公告)号:US20210003924A1
公开(公告)日:2021-01-07
申请号:US17022910
申请日:2020-09-16
Applicant: ASML Netherlands B.V.
Inventor: Patricius Aloysius Jacobus TINNEMANS , Arie Jeffrey DEN BOEF , Armand Eugene Albert KOOLEN , Nitesh PANDEY , Vasco Tomas TENNER , Willem Marie Julia Marcel COENE , Patrick WARNAAR
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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公开(公告)号:US20200301290A1
公开(公告)日:2020-09-24
申请号:US16893619
申请日:2020-06-05
Applicant: ASML NETHERLANDS B.V.
Inventor: Arie Jeffrey DEN BOEF , Kaustuve Bhattacharyya
Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.
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公开(公告)号:US20200012198A1
公开(公告)日:2020-01-09
申请号:US16575711
申请日:2019-09-19
Applicant: ASML NETHERLANDS B.V.
Inventor: Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA
IPC: G03F7/20 , G01N21/47 , G01N21/956
Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.
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公开(公告)号:US20190250518A1
公开(公告)日:2019-08-15
申请号:US16245400
申请日:2019-01-11
Applicant: ASML NETHERLANDS B.V.
Inventor: Joeri LOF , Hans BUTLER , Sjoerd Nicolaas Lambertus DONDERS , Aleksey Yurievich KOLESNYCHENKO , Erik Roelof LOOPSTRA , Hendricus Johannes Maria MEIJER , Johannes Catherinus Hubertus MULKENS , Roelof Aeilko Siebrand RITSEMA , Frank VAN SCHAIK , Timotheus Franciscus SENGERS , Klaus SIMON , Joannes Theodoor DE SMIT , Alexander STRAAIJER , Bob STREEFKERK , Erik Theodorus Maria BIJLAART , Christiaan Alexander HOOGENDAM , Helmar VAN SANTEN , Marcus Adrianus VAN DE KERKHOF , Mark KROON , Arie Jeffrey DEN BOEF , Joost Jeroen OTTENS , Jeroen Johannes Sophia Maria MERTENS
IPC: G03F7/20
Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.
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66.
公开(公告)号:US20180364591A1
公开(公告)日:2018-12-20
申请号:US16061209
申请日:2016-11-29
Applicant: ASML NETHERLANDS B.V.
Inventor: Robert John SOCHA , Arie Jeffrey DEN BOEF , Nitesh PANDEY
IPC: G03F7/20 , G01N21/956 , G01N21/88 , G01B11/27
Abstract: A method of adjusting a metrology apparatus, the method including: spatially dividing an intensity distribution of a pupil plane of the metrology apparatus into a plurality of pixels; and reducing an effect of a structural asymmetry in a target on a measurement by the metrology apparatus on the target, by adjusting intensities of the plurality of pixels.
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公开(公告)号:US20180267415A1
公开(公告)日:2018-09-20
申请号:US15764617
申请日:2016-09-06
Applicant: ASML Netherlands B.V.
Inventor: Nitesh PANDEY , Arie Jeffrey DEN BOEF , Heine Melle MULDER , Willem Richard PONGERS , Paulus Antonius Andreas TEUNISSEN
IPC: G03F9/00
CPC classification number: G03F9/7084 , G03F7/70258 , G03F9/7049 , G03F9/7076 , G03F9/7092
Abstract: A topography measurement system comprising a radiation source configured to generate a radiation beam, a spatially coded grating configured to pattern the radiation beam and thereby provide a spatially coded radiation beam, optics configured to form an image of the spatially coded grating at a target location on a substrate, detection optics configured to receive radiation re-fleeted from the target location of the substrate and form an image of the grating image at a second grating, and a detector configured to receive radiation transmitted through the second grating and produce an output signal.
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公开(公告)号:US20180088470A1
公开(公告)日:2018-03-29
申请号:US15706625
申请日:2017-09-15
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F7/70633 , G01B11/24 , G01B11/30 , G01N21/47 , G01N21/88 , G02F2202/023 , G03F7/705 , G03F7/70641
Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
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69.
公开(公告)号:US20180024054A1
公开(公告)日:2018-01-25
申请号:US15654813
申请日:2017-07-20
Applicant: ASML Netherlands B.V.
Inventor: Euclid Eberle MOON , Arie Jeffrey DEN BOEF
CPC classification number: G01N21/47 , G01N21/88 , G03F7/70633 , G03F7/70683 , G03F9/7026
Abstract: Disclosed is a method of measuring a target, an associated substrate, a metrology apparatus and a lithographic apparatus. In one arrangement the target comprises a layered structure. The layered structure has a first target structure in a first layer and a second target structure in a second layer. The method comprises illuminating the target with measurement radiation. Scattered radiation formed by interference between plural predetermined diffraction orders is detected. The predetermined diffraction orders are generated by diffraction of the measurement radiation from the first target structure and are subsequently diffracted from the second target structure. A characteristic of the lithographic process is calculated using the detected scattered radiation formed by the interference between the predetermined diffraction orders.
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70.
公开(公告)号:US20170160075A1
公开(公告)日:2017-06-08
申请号:US15439833
申请日:2017-02-22
Applicant: ASML Netherlands B.V. , ASML Holding N.V.
CPC classification number: G01B11/14 , F25D3/06 , F25D11/003 , F25D23/006 , G01B9/0207 , G03F7/70108 , G03F9/7069 , G03F9/7084 , G03F9/7088
Abstract: An apparatus (AS) measures positions of marks (202) on a lithographic substrate (W). An illumination arrangement (940, 962, 964) provides off-axis radiation from at least first and second regions. The first and second source regions are diametrically opposite one another with respect to an optical axis (O) and are limited in angular extent. The regions may be small spots selected according to a direction of periodicity of a mark being measured, or larger segments. Radiation at a selected pair of source regions can be generated by supplying radiation at a single source feed position to a self-referencing interferometer. A modified half wave plate is positioned downstream of the interferometer, which can be used in the position measuring apparatus. The modified half wave plate has its fast axis in one part arranged at 45° to the fast axis in another part diametrically opposite.
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