METROLOGY METHOD, COMPUTER PRODUCT AND SYSTEM

    公开(公告)号:US20200301290A1

    公开(公告)日:2020-09-24

    申请号:US16893619

    申请日:2020-06-05

    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

    DETERMINATION OF STACK DIFFERENCE AND CORRECTION USING STACK DIFFERENCE

    公开(公告)号:US20200012198A1

    公开(公告)日:2020-01-09

    申请号:US16575711

    申请日:2019-09-19

    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

    Method of Measuring a Target, Substrate, Metrology Apparatus, and Lithographic Apparatus

    公开(公告)号:US20180024054A1

    公开(公告)日:2018-01-25

    申请号:US15654813

    申请日:2017-07-20

    Abstract: Disclosed is a method of measuring a target, an associated substrate, a metrology apparatus and a lithographic apparatus. In one arrangement the target comprises a layered structure. The layered structure has a first target structure in a first layer and a second target structure in a second layer. The method comprises illuminating the target with measurement radiation. Scattered radiation formed by interference between plural predetermined diffraction orders is detected. The predetermined diffraction orders are generated by diffraction of the measurement radiation from the first target structure and are subsequently diffracted from the second target structure. A characteristic of the lithographic process is calculated using the detected scattered radiation formed by the interference between the predetermined diffraction orders.

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