公开(公告)号：US20090321731A1

公开(公告)日：2009-12-31

申请号：US12352851

申请日：2009-01-13

申请人： Jae-Kyeong JEONG ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeon-Gon Mo ,  Hui-Won Yang

发明人： Jae-Kyeong JEONG ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeon-Gon Mo ,  Hui-Won Yang

IPC分类号： H01L31/0256 ,  H01L29/12 ,  H01L21/02 ,  H01L31/00

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78696

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），制造TFT的方法以及具有该TFT的平板显示装置包括形成在基板上的栅电极; 由氧化物半导体制成的有源层，并通过栅极绝缘层与栅电极绝缘; 源极和漏极耦合到有源层; 以及形成在活性层的一个或两个表面上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

公开(公告)号：US20090294772A1

公开(公告)日：2009-12-03

申请号：US12318856

申请日：2009-01-09

申请人： Jong-Han Jeong ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Hui-Won Yang ,  Yeon-Gon Mo

发明人： Jong-Han Jeong ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Hui-Won Yang ,  Yeon-Gon Mo

IPC分类号： H01L33/00 ,  H01J1/62 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618

摘要： A thin film transistor is provided having an oxide semiconductor as an active layer, a method of manufacturing the thin film transistor and a flat panel display device having the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer isolated from the gate electrode by a gate insulating layer and including channel, source and drain regions; source and drain electrodes coupled to the source and drain regions, respectively; and an ohmic contact layer interposed between the source and drain regions and the source and drain electrodes. In the TFT, the ohmic contact layer is formed with the oxide semiconductor layer having a carrier concentration higher than those of the source and drain regions.

摘要翻译： 提供具有氧化物半导体作为有源层的薄膜晶体管，制造薄膜晶体管的方法和具有薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 通过栅极绝缘层与栅电极隔离并且包括沟道，源极和漏极区域的氧化物半导体层; 源极和漏极分别耦合到源极和漏极区域; 以及插入在源极和漏极区域以及源极和漏极之间的欧姆接触层。 在TFT中，欧姆接触层与载流子浓度高于源区和漏区的氧化物半导体层形成。

公开(公告)号：US20090166636A1

公开(公告)日：2009-07-02

申请号：US12341064

申请日：2008-12-22

申请人： Jin-Seong PARK ,  Yeon-Gon Mo ,  Hye-Dong Kim

发明人： Jin-Seong PARK ,  Yeon-Gon Mo ,  Hye-Dong Kim

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L29/78675 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78603

摘要： A thin film transistor (TFT), a method of fabricating the same, and display device having the TFT of which the TFT includes a metal catalyst layer disposed on a substrate, a semiconductor layer disposed on the metal catalyst layer, a gate insulating layer disposed on the entire surface of the substrate, a gate electrode disposed on the gate insulating layer at a position corresponding to the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes disposed on the interlayer insulating layer and connected to the semiconductor layer, wherein the metal catalyst layer includes one of carbon, nitrogen, and halogen. The thin film transistor includes a poly-Si layer that may be formed to a smaller thickness than in conventional deposition methods thereby producing a TFT in which the remaining amount of metal catalyst in a semiconductor layer is reduced.

摘要翻译： 薄膜晶体管（TFT）及其制造方法以及具有TFT的TFT的显示装置，TFT包括设置在基板上的金属催化剂层，设置在金属催化剂层上的半导体层，设置在栅极绝缘层 在基板的整个表面上，在对应于半导体层的位置处设置在栅极绝缘层上的栅极电极，设置在基板的整个表面上的层间绝缘层，以及设置在层间绝缘层上的源极和漏极 并连接到半导体层，其中金属催化剂层包括碳，氮和卤素中的一种。 薄膜晶体管包括可以形成为比常规沉积方法更小的厚度的多晶硅层，从而制造其中半导体层中的金属催化剂的剩余量减少的TFT。

公开(公告)号：US20090159879A1

公开(公告)日：2009-06-25

申请号：US12318212

申请日：2008-12-23

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Jong-Han Jeong

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Jong-Han Jeong

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A TFT includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a surface roughness of about 1.3 nm or less, a gate electrode on the transparent semiconductor layer, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.

摘要翻译： TFT包括基板，在基板上的透明半导体层，包含氧化锌的表面粗糙度为1.3nm以下的透明半导体层，透明半导体层上的栅极电极，栅电极之间的栅极绝缘层 并且所述透明半导体层，所述栅极绝缘层将所述栅电极与所述透明半导体层绝缘，以及所述基板上的源极和漏极，所述源极和漏极与所述透明半导体层接触。

公开(公告)号：US07551255B2

公开(公告)日：2009-06-23

申请号：US11486595

申请日：2006-07-13

申请人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Yeon Gon Mo ,  Jong Han Jeong ,  Hun Jung Lee ,  Sung Jin Kim

发明人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Yeon Gon Mo ,  Jong Han Jeong ,  Hun Jung Lee ,  Sung Jin Kim

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/3244 ,  H01L2251/5338

摘要： An organic light emitting display device including a flexible substrate and a plurality of thin film transistors (TFTs) formed on the substrate. The plurality of TFTs formed on the substrate include a pixel transistor for driving a pixel and a driver circuit transistor for driving a driver circuit, and a longitudinal direction of a channel region of the pixel transistor makes a first predetermined angle with a direction in which the substrate is bent. As such, it is possible to minimize a change in the electrical property of the TFTs formed on the flexible substrate and to thus reduce a change in the amount of current that flows in the channels of the TFTs.

摘要翻译： 一种有机发光显示装置，包括形成在基板上的柔性基板和多个薄膜晶体管（TFT）。 形成在基板上的多个TFT包括用于驱动像素的像素晶体管和用于驱动驱动电路的驱动电路晶体管，像素晶体管的沟道区的纵向方向与第 基板弯曲。 因此，可以使形成在柔性基板上的TFT的电性能的变化最小化，从而减小在TFT的沟道中流动的电流量的变化。

公开(公告)号：US20080224133A1

公开(公告)日：2008-09-18

申请号：US12076216

申请日：2008-03-14

申请人： Jin-seong Park ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jong-han Jeong ,  Hyun-soo Shin ,  Hun-jung Lee

发明人： Jin-seong Park ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jong-han Jeong ,  Hyun-soo Shin ,  Hun-jung Lee

IPC分类号： H01L29/22 ,  H01L21/34

CPC分类号： H01L21/02579 ,  H01L21/02554 ,  H01L21/0262 ,  H01L27/3244 ,  H01L29/7869

摘要： Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less.

摘要翻译： 公开了一种包括P型半导体层的薄膜晶体管和具有该薄膜晶体管的有机发光显示装置。 本发明提供了一种薄膜晶体管，其包括基板，半导体层以及形成在基板上的栅电极和源/漏电极，其中半导体层由P型ZnO：N层构成，通过 具有锌前体的单氮气，ZnO：N层包含3原子％以下的未反应的杂质元素。

公开(公告)号：US20060118789A1

公开(公告)日：2006-06-08

申请号：US11291928

申请日：2005-12-02

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Taek Ahn ,  Jong-Han Jeong

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Taek Ahn ,  Jong-Han Jeong

IPC分类号： H01L29/04

CPC分类号： H01L51/0541 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0516

摘要： A thin film transistor, a method of manufacturing the same, and a flat panel display including the thin film transistor. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, a first conductive layer connected to the gate electrode, a second conductive layer connected to one of the source and drain electrodes, an organic semiconductor layer that contacts the source and drain electrodes and an insulating layer insulating the source and drain electrodes and the organic semiconductor layer from the gate electrode, wherein at least one of the gate electrode, the first conductive layer, the source and drain electrodes, and the second conductive layer includes conductive nano-particles and a cured resin. Conductive layers of the thin film transistor can have precise patterns. The thin film transistor can be manufactured by low-cost, low-temperature processes.

摘要翻译： 薄膜晶体管，其制造方法和包括薄膜晶体管的平板显示器。 薄膜晶体管包括栅电极，源电极和漏电极，连接到栅电极的第一导电层，连接到源极和漏极之一的第二导电层，接触源极的有机半导体层和 漏电极和绝缘层，其将源极和漏极以及有机半导体层与栅电极绝缘，其中栅电极，第一导电层，源极和漏极以及第二导电层中的至少一个包括导电纳米 颗粒和固化树脂。 薄膜晶体管的导电层可以具有精确的图案。 薄膜晶体管可以通过低成本，低温工艺制造。

公开(公告)号：US20060028130A1

公开(公告)日：2006-02-09

申请号：US11196241

申请日：2005-08-04

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Kyong-Do Kim ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Kyong-Do Kim ,  Yeon-Gon Mo

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L51/0516

摘要： Provided are an organic thin film transistor (TFT), which can prevent deformation or separation due to mechanical stress, and a flat panel display device including the organic TFT. The organic TFT includes a gate electrode; a source electrode and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode, and contacting the source electrode and the drain electrodes; and a gate insulating layer insulating the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer. The gate insulating layer may be patterned in an island shape to permit adjacent portions of the substrate to flex freely, thereby reducing stress and deformation of the organic TFT and its component layers.

公开(公告)号：US20050258422A1

公开(公告)日：2005-11-24

申请号：US11134294

申请日：2005-05-23

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/76 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L51/50 ,  H05B33/14

CPC分类号： H01L51/0545 ,  G02F1/136227 ,  G02F1/1368 ,  H01L51/0004 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0081

摘要： A thin film transistor, and a flat panel display with the same, including a gate electrode, source and drain electrodes, an organic semiconductor layer, and a gate insulating layer. A first capacitance is a capacitance at a first point where the organic semiconductor layer, an electrode, and the gate insulating layer contact one another, a second capacitance is a capacitance at a second point where the organic semiconductor layer contacts the gate insulating layer, a third capacitance is a capacitance at a third point where the electrode contacts the gate insulating layer, and a fourth capacitance is a capacitance at a fourth point where the organic semiconductor layer contacts the electrode. The first capacitance is greater than one of the second capacitance, the third capacitance, and the fourth capacitance.

摘要翻译： 薄膜晶体管及其平板显示器，包括栅极，源极和漏极，有机半导体层和栅极绝缘层。 第一电容是在有机半导体层，电极和栅极绝缘层彼此接触的第一点处的电容，第二电容是有机半导体层接触栅绝缘层的第二点处的电容， 第三电容是电极接触栅极绝缘层的第三点处的电容，第四电容是有机半导体层接触电极的第四点处的电容。 第一电容大于第二电容，第三电容和第四电容中的一个。

公开(公告)号：US06741321B2

公开(公告)日：2004-05-25

申请号：US10315733

申请日：2002-12-09

申请人： Seok-Hong Jeong ,  Woon-Seop Choi ,  Jeong-Geun Yoo ,  Yeon-Gon Mo ,  Min-Kyu Kim ,  Hee-Jung Lee

发明人： Seok-Hong Jeong ,  Woon-Seop Choi ,  Jeong-Geun Yoo ,  Yeon-Gon Mo ,  Min-Kyu Kim ,  Hee-Jung Lee

IPC分类号： G02F11343

CPC分类号： G02F1/13718 ,  G02F1/133377 ,  G02F1/1341 ,  G02F2203/34

摘要： A raw panel for a liquid crystal display. A first substrate includes first electrodes opposing a second substrate including second electrodes. A plurality of main walls having a predetermined height are arranged in a striped pattern between first and second substrates to define a plurality of channels. The channels include sets of pixels, each set formed by three neighboring channels. First sub-walls are mounted at a predetermined distance from a first end line and between the main walls defining first channels in sets the first channels each having at least two separate spaces. Second sub-walls are mounted at a predetermined second distance from the first end line and between the main walls defining second channels in sets, the second channels each having at least two separate spaces. The raw panel is opened at the first end line and at a second end line opposite the first end line.

摘要翻译： 用于液晶显示器的原始面板。 第一衬底包括与包括第二电极的第二衬底相对的第一电极。 具有预定高度的多个主壁以第一和第二基板之间的条纹图案布置以限定多个通道。 这些通道包括由三个相邻通道形成的每组像素。 第一子壁安装在距离第一端线预定距离处，并且在限定第一通道的主壁之间安装，每个第一通道具有至少两个分开的空间。 第二子壁安装在距离第一端线预定的第二距离处，并且在限定第二通道的主壁之间，第二通道各自具有至少两个分开的空间。 原始面板在第一端线处和与第一端线相对的第二端线处打开。