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    LIQUID-SEMICONDUCTOR NEUTRON DETECTOR
    52.
    发明申请
    LIQUID-SEMICONDUCTOR NEUTRON DETECTOR 审中-公开
    液体半导体中子检测器

    公开(公告)号：US20150362605A1

    公开(公告)日：2015-12-17

    申请号：US14443051

    申请日：2013-11-11

    申请人： CONSEJO SUPERIOR DE INVESTIGACIONES CIENTÍFICAS (CSIC)

    发明人： Consuelo GUARDIOLA SALMERÓN ,  Manuel LOZANO FANTOBA ,  Celeste FLETA CORRAL ,  Giulio PELLEGRINI ,  David QUIRION

    IPC分类号： G01T3/08 ,  H01L31/0203 ,  H01L31/115 ,  G01T3/06

    CPC分类号： G01T3/08 ,  G01T3/06 ,  H01L31/0203 ,  H01L31/115

    摘要： The invention relates to a liquid-semiconductor neutron detector characterised in that it comprises a hybrid structure consisting of a solid phase and a liquid phase, where the solid phase comprises a substrate of a semiconductor material characterised in that it has a series of grooves along the surface of one of the faces thereof forming an electrode of the detector, and where the liquid phase is contained in said grooves and characterised in that it comprises at least one neutron converter compound containing at least one isotope that is able to capture neutrons and replace them with charged particles suitable for ionising the semiconductor material. The invention also relates to the method for producing said detector and to the use thereof.

    摘要翻译： 本发明涉及一种液体半导体中子探测器，其特征在于其包括由固相和液相组成的混合结构，其中固相包括半导体材料的衬底，其特征在于，其具有沿着 其表面之一形成检测器的电极，并且其中所述液相包含在所述槽中，其特征在于，其包含至少一种含有能够捕获中子并替换它们的至少一个同位素的中子转化器化合物 具有适于电离半导体材料的带电粒子。 本发明还涉及生产所述检测器的方法及其用途。

    Thin film transistor array substrate for digital photo-detector
    53.
    发明授权
    Thin film transistor array substrate for digital photo-detector 有权

    公开(公告)号：US09209219B2

    公开(公告)日：2015-12-08

    申请号：US14086034

    申请日：2013-11-21

    申请人： LG Display Co., Ltd.

    发明人： Dae-Kyu Kim ,  Sung-Bong Ha

    IPC分类号： H01L31/115 ,  H01L27/146 ,  H01L27/30

    摘要： A thin film transistor array substrate for a digital photo-detector is provided. The photo-detector includes a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; a thin film transistor at each intersection between the gate lines and the data lines to output a photoelectric conversion signal from the photodiode to the data lines in response to a scan signal supplied by the gate lines; and a light-shielding layer over each channel region of the respective thin film transistors. Each light-shielding layer is electrically connected to the respective gate line.

    Semiconductor drift detector and corresponding operating method
    56.
    发明授权
    Semiconductor drift detector and corresponding operating method 有权
    半导体漂移探测器及相应的操作方法

    公开(公告)号：US09142702B2

    公开(公告)日：2015-09-22

    申请号：US14125470

    申请日：2012-06-18

    申请人： Gerhard Lutz ,  Heike Soltau ,  Adrian Niculae

    发明人： Gerhard Lutz ,  Heike Soltau ,  Adrian Niculae

    IPC分类号： G01T1/24 ,  H01L31/115 ,  H01L27/144 ,  H01L31/02 ,  H01L31/08 ,  H01J37/244 ,  H01L31/0224

    CPC分类号： H01L31/115 ,  G01T1/247 ,  G01T1/2928 ,  H01J37/244 ,  H01J2237/2442 ,  H01J2237/2448 ,  H01L27/1443 ,  H01L31/02005 ,  H01L31/022416

    摘要： The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (⊖), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (⊖), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS). The invention provides for the semiconductor drift detector to be optionally operable in a first operating mode or in a second operating mode, wherein the semiconductor drift detector in the first operating mode measures the photon energy of the incident photons (h·f), whereas the semiconductor drift detector in the second operating mode measures the signal charge carrier current. Furthermore, the invention encompasses a corresponding operating method.

    摘要翻译： 本发明涉及一种用于检测辐射的半导体漂移检测器，其包括半导体衬底（HS），其中在操作期间产生信号电荷载流子，由具有特定光子能量的入射光子（h·f）精确地，更具体地， X射线荧光辐射的形式和/或具有特定信号电荷载流子的入射电子（⊖），特别是背散射电子（⊖）的形式，并且包括一个读出的阳极（A ），用于以取决于信号电荷载流子的方式产生电输出信号，并且包括用于擦除积聚在半导体衬底（HS）中的信号电荷载流子的擦除触点（RC）。 本发明提供半导体漂移检测器可选地在第一操作模式或第二操作模式中可操作，其中第一操作模式中的半导体漂移检测器测量入射光子（h·f）的光子能量，而 半导体漂移检测器在第二种工作模式下测量信号载流子电流。 此外，本发明包括相应的操作方法。

    Radiation detecting element and radiation detecting device
    58.
    发明授权
    Radiation detecting element and radiation detecting device 有权
    辐射检测元件和辐射检测装置

    公开(公告)号：US09054260B2

    公开(公告)日：2015-06-09

    申请号：US14167075

    申请日：2014-01-29

    申请人： Takehisa Konda

    发明人： Takehisa Konda

    IPC分类号： H01L33/02 ,  H01L31/08 ,  G01T1/20 ,  H01L31/108 ,  H01L31/115 ,  G01T1/24

    CPC分类号： H01L31/085 ,  G01T1/2018 ,  G01T1/249 ,  H01L31/1085 ,  H01L31/115

    摘要： There has been such a problem that radiation detecting elements using semiconductor elements have a low radiation detection efficiency, since the radiation detecting elements easily transmit radiation, even though the radiation detecting elements have merits, such as small dimensions and light weight. Disclosed are a radiation detecting element and a radiation detecting device, wherein a film formed of a metal, such as tungsten, is formed on the radiation incident surface of the radiation detecting element, and the incident energy of the radiation is attenuated. The efficiency of generating carriers by way of radiation incidence is improved by attenuating the incident energy, the thickness of the metal film is optimized, and the radiation detection efficiency is improved.

    摘要翻译： 存在使用半导体元件的放射线检测元件具有低辐射检测效率的问题，因为即使辐射检测元件具有尺寸小，重量轻等优点，因为辐射检测元件容易发射辐射。 公开了一种放射线检测元件和放射线检测装置，其中由诸如钨的金属形成的膜形成在辐射检测元件的辐射入射表面上，并且辐射的入射能量被衰减。 通过衰减入射能量，通过辐射入射发生载流子的效率得到改善，金属膜的厚度被优化，辐射检测效率得到提高。

    Radiation detection apparatuses including optical coupling material, and processes of forming the same
    60.
    发明授权
    Radiation detection apparatuses including optical coupling material, and processes of forming the same 有权
    包括光耦合材料的辐射检测装置及其形成方法

    公开(公告)号：US09018588B2

    公开(公告)日：2015-04-28

    申请号：US13716106

    申请日：2012-12-15

    申请人： Peter R. Menge

    发明人： Peter R. Menge

    IPC分类号： G01T1/20 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/115

    CPC分类号： G01T1/2002 ,  G01T1/2018 ,  H01L31/02322 ,  H01L31/115 ,  H01L31/18

    摘要： A radiation detection apparatus can have optical coupling material capable of absorbing wavelengths of light within approximately 75 nm of a wavelength of scintillating light of a scintillation member of the radiation detection apparatus. In an embodiment, the optical coupling material can be disposed between a photosensor of the radiation detection apparatus and the scintillation member. In a particular embodiment, the composition of the optical coupling material can include a dye. In an illustrative embodiment, the dye can have a corresponding a* coordinate, a corresponding b* coordinate, and an L* coordinate greater than 0. In another embodiment, the optical coupling material can be disposed along substantially all of a side of the photosensor.

    摘要翻译： 辐射检测装置可以具有能够吸收辐射检测装置的闪烁构件的闪烁光的波长的大约75nm内的波长的光耦合材料。 在一个实施例中，光耦合材料可以设置在放射线检测装置的光电传感器和闪烁构件之间。 在一个具体实施方案中，光学偶联材料的组成可以包括染料。 在说明性实施例中，染料可以具有相应的a *坐标，相应的b *坐标和大于0的L *坐标。在另一个实施例中，光学耦合材料可以沿着光电传感器的大致一侧 。