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公开(公告)号:US20220209497A1
公开(公告)日:2022-06-30
申请号:US17697897
申请日:2022-03-17
申请人: NICHIA CORPORATION
发明人: Masatoshi NAKAGAKI , Soichiro MIURA
IPC分类号: H01S5/02355 , H01S5/40 , H01S5/0233
摘要: A light emitting device includes first to third semiconductor laser elements. Each of the semiconductor laser elements includes at least two emitters, and configured to emit red-color light, green-color light, or blue-color light. The mount member includes first to third conduction parts, each including a plurality of metal films including mounting regions that are aligned in a predetermined direction. The first to third semiconductor laser elements are respectively mounted on the first to third conduction parts of the mount member in a junction-down configuration.
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公开(公告)号:US20220140566A1
公开(公告)日:2022-05-05
申请号:US17573701
申请日:2022-01-12
申请人: OSRAM OLED GmbH
发明人: Wolfgang Reill
IPC分类号: H01S5/0237 , H01S5/042 , H01S5/065 , H01S5/023 , H01S5/0233 , H01S5/0234 , H01S5/0235
摘要: A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, the semiconductor body includes a connection region that directly adjoins the first connection element at the contact area, and the connection region is a highly p-doped layer.
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公开(公告)号:US11322908B2
公开(公告)日:2022-05-03
申请号:US16670833
申请日:2019-10-31
发明人: Toru Takayama , Tohru Nishikawa , Tougo Nakatani , Katsuya Samonji , Takashi Kano , Shinji Ueda
IPC分类号: H01S5/34 , H01S5/024 , H01S5/026 , H01S5/22 , H01S5/343 , H01S5/023 , H01S5/0233 , H01S5/0235 , H01S5/16 , H01S5/02 , H01S5/0234 , F21Y115/30 , F21S41/176 , F21S41/16 , H01S5/20 , H01S5/10 , H01S5/0237
摘要: A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0≤x≤1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.
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公开(公告)号:US11322907B2
公开(公告)日:2022-05-03
申请号:US16275964
申请日:2019-02-14
申请人: KYOCERA Corporation
发明人: Daisuke Ueyama , Chiaki Doumoto , Takeshi Kamikawa
IPC分类号: H01S5/0233 , H01S5/023 , H01L23/00 , H01S5/0235 , H01S5/02345 , H01S5/024 , H01S5/02216
摘要: A light emitting element housing package of the present disclosure includes a base part including a first surface including a first recessed part for mounting a light emitting element. Surface roughness Sa of at least such a region of a bottom surface of the first recessed part that is opposite to a light emitting element mounted on the first recessed part is smaller than surface roughness Sa of a region other than the first recessed part of the first surface. Further, a light emitting device of the present disclosure includes the light emitting element housing package and a light emitting element housed in the light emitting element housing package. Further, a light emitting module of the present disclosure includes the light emitting device and a module substrate on which the light emitting device is mounted.
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公开(公告)号:US20220085571A1
公开(公告)日:2022-03-17
申请号:US17477811
申请日:2021-09-17
申请人: iReach Corporation
发明人: Shou-Lung Chen , Hsin-Chan Chung , Hsiu-Ju Yang , Chih-Chiang Lu , Kuo-Min Huang
IPC分类号: H01S5/183 , H01S5/02 , H01S5/0233
摘要: A package structure of a laser device is provided, including: a first light transmissive substrate including a first surface, a second surface opposing the first surface, a first side surface between the first surface and the second surface, and a second side surface opposing the first side surface; a laser structure including a first laser chip and a second laser chip which are disposed on the first surface, and the first laser chip including a third side surface; a first optical component disposing on the first light transmissive substrate and corresponding in position to the first laser chip; and a second optical component disposing on the light transmissive substrate and corresponding in position to the second laser chip; wherein the first side surface is coplanar with the third side surface.
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公开(公告)号:US11152762B2
公开(公告)日:2021-10-19
申请号:US16027938
申请日:2018-07-05
发明人: Eisaku Kaji , Yutaka Ohki
IPC分类号: H01S5/10 , H01S5/22 , H01S5/042 , H01S5/023 , H01S5/0233 , H01S5/0235 , G02B6/293 , G02B6/32 , G02B6/34 , G02B6/42
摘要: A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.
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公开(公告)号:US20210249837A1
公开(公告)日:2021-08-12
申请号:US17237793
申请日:2021-04-22
发明人: Shinichiro NOZAKI
IPC分类号: H01S5/023 , H01S5/40 , H01S5/0233 , H01S5/0235 , H01S5/024
摘要: A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.
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公开(公告)号:US11973311B2
公开(公告)日:2024-04-30
申请号:US16879985
申请日:2020-05-21
发明人: Guoguo Wang
IPC分类号: H01S5/02315 , H01S5/02212 , H01S5/023 , H01S5/0231 , H01S5/0233 , H01S5/02345 , H01S5/0235 , H01S5/024 , H01S5/062 , H01S5/12
CPC分类号: H01S5/02315 , H01S5/023 , H01S5/0231 , H01S5/0233 , H01S5/0235 , H01S5/02415 , H01S5/02476 , H01S5/02212 , H01S5/02345 , H01S5/06226 , H01S5/12
摘要: An optical sub-module includes a base body having a first base surface and a second base surface that are opposite to each other, a plurality of pins each penetrating through the second base surface and the first base surface, a heat sink disposed on the first base surface and having a groove facing the plurality of pins, a temperature regulator disposed in the groove, and a light emitter disposed on the temperature regulator. The temperature regulator includes a first heat exchange surface and a second heat exchange surface that are opposite to each other, the first heat exchange surface is in contact with an inner wall of the groove, and the light emitter is disposed at the second heat exchange surface so as to perform heat transfer with the temperature regulator.
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公开(公告)号:US20230291173A1
公开(公告)日:2023-09-14
申请号:US18321257
申请日:2023-05-22
发明人: Zinan ZHOU , Youliang TIAN , Xin ZHANG , Yunchen LU , Jianjun LI , Xintuan TIAN , Qian SHAO
IPC分类号: H01S5/0233 , H01S5/40 , H01S5/024 , H01S5/02315
CPC分类号: H01S5/0233 , H01S5/4025 , H01S5/02469 , H01S5/02315
摘要: Provided is a laser. The laser includes: a base plate, an annular side wall, a plurality of conductive pins, a plurality of light-emitting chips, and a plurality of conductive wires; wherein the side wall and the plurality of light-emitting chips are disposed on the base plate, the side wall surrounds the plurality of light-emitting chips, the plurality of conductive pins are extended through the side wall and are affixed into the side wall, and sides, distal from the base plate, of portions of the plurality of conductive pins surrounded by the side wall include planar regions, wherein the planar region of each of the plurality of conductive pins is connected to the light-emitting chip via the conductive wire.
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公开(公告)号:US20230261432A1
公开(公告)日:2023-08-17
申请号:US18307362
申请日:2023-04-26
发明人: Roe HEMENWAY , Cristian STAGARESCU , Daniel MEEROVICH , Malcolm R. GREEN , Wolfgang PARZ , Jichi MA , Richard Robert GRZYBOWSKI , Nathan BICKEL
IPC分类号: H01S5/0233 , G02B6/42 , H01S5/023 , H01S5/0235 , H01S5/02326 , H01S5/02345 , H01S5/02375 , H01S5/026
CPC分类号: H01S5/0233 , G02B6/4232 , G02B6/423 , H01S5/023 , H01S5/0235 , H01S5/02326 , H01S5/02345 , H01S5/02375 , H01S5/026 , G02B6/42 , H01S5/3211
摘要: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.
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