Abstract:
There is to provide a mask including a transparent member at a side of a surface of a base, a pattern being formed on the surface, and a correction part for correcting a change in an optical path of the transparent member.
Abstract:
It is an object of the present invention to reduce a number of deflection awaiting and a connection error between shots by scanning and exposing a formed beam having a large area. To achieve the object, a continuous scanning deflector and a scan limiter are added to a variable forming type electron beam column and the drawing is performed such that a state in which the electron beam is limited by the scan limiter is continuous to a state in which the electron beam is irradiated on a face of a sample. According to this structure, the number of deflection awaiting and the connection error between shots are reduced and further, a high-speed and highly accurate drawing of a 45null slanted figure is made possible.
Abstract:
The invention provides a hologram recording or replicating optical system wherein a misalignment-with-time of the center of a laser generated beam is automatically corrected so that the color balance in a color hologram surface, for instance, can be well maintained with no disturbance. In the hologram recording or replicating optical system for irradiating a photosensitive material 20 with a beam from a laser 31 through a pinhole 10, a beam position correcting mechanism 32 and a beam splitter 33 are located in an optical path between the laser 31 and the pinhole 10, and a laser beam position detector 35 is located at a position in an optical path split by the beam splitter 33 and conjugate to the pinhole 10, so that the beam position correcting mechanism 32 can be operated on the basis of a beam position error signal obtained from the laser beam position detector 35 to keep the position of the beam incident on the pinhole 10 always constant.
Abstract:
A reflective mask having non-reflective and reflective regions. The reflective regions are reflective of light at an inspection wavelength and a semiconductor processing wavelength and the non-reflective regions are substantially non-reflective of light at the inspection wavelength and the semiconductor processing wavelength. The contrast of reflected light off of the non-reflective and reflective regions is greater than 0.210 at either of the two wavelengths.
Abstract:
An exposure apparatus includes a plurality of purge spaces delimited along the optical path between the laser light source and the substrate by housings the boundary members of which are invisible to the exposing light, and pressure regulating unit for exercising control in such a manner that the pressure within each purge space attains a predetermined value. In the exposure apparatus that is purged in sections, therefore, it is possible to reduce the amount of deformation of the end faces between mutually adjacent purge spaces, e.g., the end face of a projection optics unit.
Abstract:
A reflection-type mask for use in exposing a pattern onto a photosensitive material, wherein the mask includes a reflection area, having a multilayer film, for reflecting exposure light, and a non-reflection area which does not reflect the exposure light, the reflection area and the non-reflection area forming a mask pattern, wherein at least one layer of the multilayer film consists of an impurity semiconductor, whereby bad influences, for example, caused by poor conduction of the multilayer film at mask-production stage, can be prevented.
Abstract:
In a pattern formation member adopted to a sectioning image observation apparatus which selectively irradiates a light from a light source to a sample, scans the sample, and acquires a light from the sample as a sectioning image, the pattern formation member comprises an irradiation section and a cutoff section, each of the irradiation section and the cutoff section is in a straight pattern, and these straight patterns are disposed alternatively.
Abstract:
In the case of drawing an oblique figure pattern, when drawing an oblique figure by using a slender rectangular beam, a problem occurs that edge roughness occurs at an oblique-side portion to deteriorate the drawing accuracy. The present invention solves the above problem and provides an electron-beam drawing apparatus and an electron-beam drawing method capable of accurately drawing even an oblique figure. A first rectangular aperture and a second parallelogrammatic aperture are used and a variable parallelogrammatic electron beam formed by two apertures is used to draw a desired pattern on the surface of a sample. Moreover, oblique-side-portion-contour decomposition means is used to draw an oblique-side portion by a variable parallelogram and the inside of an oblique side by a triangle and a quadrangle (rectangle).
Abstract:
A boron ion plasma, generated by use of a cathodic arc, is manipulated and delivered to a large flat product such as a silicon wafer with boron ion energies suitable for incorporation of boron atoms into solid state devices as one of the key steps in manufacturing solid state electronics and with uniformity of boron dose over the area suitable for the scale of manufacturing desired.
Abstract:
An electron beam exposure apparatus for exposing a wafer with an electron beam includes a section for generally controlling a wafer exposing system, a first buffer memory for temporarily storing exposure data, a second buffer memory for temporarily storing the exposure data, a first exposing section for irradiating the wafer with an electron beam based on exposure data output from the first buffer memory, and a first comparing section for comparing exposure data output from the first buffer memory with exposure data output from the second buffer memory and notifying the comparison results to the general control section. Further, an exposure apparatus and a pattern error detection method for accurately detecting an error of an exposure pattern formed to a wafer is disclosed.