公开(公告)号：US11473198B2

公开(公告)日：2022-10-18

申请号：US16752618

申请日：2020-01-25

申请人： Applied Materials, Inc.

发明人： Thomas Knisley ,  Mark Saly

IPC分类号： C07F5/00 ,  C23C16/455 ,  C09D1/00 ,  C23C16/18 ,  C23C16/32 ,  C23C16/44 ,  C23C16/38 ,  C23C16/30 ,  C23C16/40 ,  C23C16/34 ,  C23C16/42 ,  C23C16/36 ,  C08F4/54 ,  C08F136/02

摘要： Described are lanthanide-containing metal coordination complexes which may be used as precursors in thin film depositions, e.g. atomic layer deposition processes. More specifically, described are homoleptic lanthanide-aminoalkoxide metal coordination complexes, lanthanide-carbohydrazide metal coordination complexes, and lanthanide-diazadiene metal coordination complexes. Additionally, methods for depositing lanthanide-containing films through an atomic layer deposition process are described.

公开(公告)号：US11417521B2

公开(公告)日：2022-08-16

申请号：US17150177

申请日：2021-01-15

申请人： Tokyo Electron Limited

发明人： Hitoshi Kato

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L21/311 ,  C23C16/32

摘要： A film forming method forms a silicon film on a substrate placed on a turntable which rotates and passes through first and second process regions that are mutually separated along a circumferential direction inside a vacuum chamber that is settable to a first temperature at which Si—H bond dissociation can occur. A film forming process includes forming a molecular layer of SiH3 on the substrate, by supplying a Si2H6 gas that is set to a second temperature higher than the first temperature during a time period in which the substrate passes through the first process region, and forming a molecular layer of SiCl3 on the substrate having the molecular layer of SiH3 formed thereon while causing the Si—H bond dissociation in the molecular layer of SiH3, by supplying a gas including silicon and chlorine during a time period in which the substrate passes through the second process region.

公开(公告)号：US20220251702A1

公开(公告)日：2022-08-11

申请号：US17731458

申请日：2022-04-28

申请人： Advanced Silicon Carbide Materials

发明人： William F. Fischer, III ,  Walter Wrigglesworth, III ,  Lauren Montgomery

IPC分类号： C23C16/32 ,  C23C16/56

摘要： A method of forming a composite article may generally comprise forming a mixture of (i) a reactant gas stream comprising hydrogen and methyltrichlorosilane and (ii) solid silicon carbide particles; heating a carbon substrate in the reactor; heating the mixture of the reactant gas stream and solid silicon carbide particles to decompose the methyltrichlorosilane to produce silicon carbide material without causing the solid silicon carbide particles to react and injecting the heated mixture into the reactor; co-depositing the silicon carbide material and the solid silicon carbide particles onto the heated carbon substrate in the reactor to produce a CVD matrix comprising the silicon carbide material and the solid silicon carbide particles by chemical vapor deposition on the heated carbon substrate; post-treating the carbon substrate having the CVD matrix coating in a furnace; and cooling and removing the carbon substrate from the CVD matrix to form the transparent composite article.

公开(公告)号：US20220208541A1

公开(公告)日：2022-06-30

申请号：US17695400

申请日：2022-03-15

申请人： STMICROELECTRONICS S.R.L.

发明人： Ruggero ANZALONE ,  Nicolo' FRAZZETTO

IPC分类号： H01L21/02 ,  H01L29/16 ,  H01L21/683 ,  C23C16/01 ,  C23C16/32

摘要： Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support.

公开(公告)号：US11371150B2

公开(公告)日：2022-06-28

申请号：US16734329

申请日：2020-01-04

申请人： Kennametal Inc.

发明人： Zhenyu Liu

IPC分类号： C23C16/40 ,  C23C28/04 ,  C23C16/36 ,  C23C16/32 ,  C23C16/34 ,  B23C5/16

摘要： A coating includes a layer having an alumina matrix and at least one of zirconia grains and hafnia grains in the alumina matrix. An average grain size of the at least one of the zirconia grains and hafnia grains is 100 nm or less. A coated cutting tool includes a substrate and the coating bonded to the substrate. The substrate has a rake face, a flank face, and a cutting edge formed at the intersection of the rake face and the flank face.

公开(公告)号：US20220189775A1

公开(公告)日：2022-06-16

申请号：US17546186

申请日：2021-12-09

申请人： ASM IP Holding B.V.

发明人： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC分类号： H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  C23C16/32

摘要： Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20220146564A1

公开(公告)日：2022-05-12

申请号：US17519679

申请日：2021-11-05

申请人： SHOWA DENKO K.K.

发明人： Koichi Murata ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Akira MIYASAKA

IPC分类号： G01R31/26 ,  H01L21/66 ,  G01R1/067 ,  G01R31/265 ,  C23C16/32 ,  C23C16/52 ,  C30B25/16 ,  C30B29/36

摘要： A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.

公开(公告)号：US20220139708A1

公开(公告)日：2022-05-05

申请号：US17580299

申请日：2022-01-20

申请人： Air Water Inc.

发明人： Hidehiko OKU ,  Ichiro HIDE

IPC分类号： H01L21/02 ,  C23C16/32 ,  C30B25/18 ,  C30B29/36 ,  C30B29/40 ,  H01L21/306 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20

摘要： A method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film, wherein the method includes forming a SiC film on one principal surface side of a Si substrate and forming a recessed part in which a bottom surface is Si in a central part of another principal surface of the Si substrate.

公开(公告)号：US20220139704A1

公开(公告)日：2022-05-05

申请号：US17572509

申请日：2022-01-10

申请人： DNF CO., LTD.

发明人： Sung Gi KIM ,  Jeong Joo PARK ,  Joong Jin PARK ,  Se Jin JANG ,  Byeong-il YANG ,  Sang-Do LEE ,  Sam Dong LEE ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： H01L21/02 ,  C23C16/32 ,  C01B33/18 ,  C01B21/068 ,  C07F7/10 ,  C23C16/455 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C23C16/36 ,  C09D1/00

摘要： Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：US11319212B2

公开(公告)日：2022-05-03

申请号：US16282413

申请日：2019-02-22

申请人： IHI Corporation

发明人： Yasutomo Tanaka ,  Yuuta Ootsuka ,  Wataru Kubota ,  Masato Ishizaki ,  Kozue Akazaki

IPC分类号： C01B33/107 ,  C23C16/24 ,  C23C16/32 ,  C23C16/56 ,  C23C16/44

摘要： This disclosure is to make it possible to easily stabilize a chlorosilane polymer while preventing a solid chlorosilane polymer from being generated. Disclosed is a method for stabilizing a chlorosilane polymer generated secondarily in a step of a chemical vapor deposition method using chlorosilane-based gas, the method including: a step of bringing alcohol into contact with the chlorosilane polymer, degrading the chlorosilane polymer to alkoxide, hydrogen chloride and hydrogen, and diluting the degraded alkoxide with the alcohol; and a step of performing hydrolysis for the alkoxide.