公开(公告)号：US20220146564A1

公开(公告)日：2022-05-12

申请号：US17519679

申请日：2021-11-05

申请人： SHOWA DENKO K.K.

发明人： Koichi Murata ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Akira MIYASAKA

IPC分类号： G01R31/26 ,  H01L21/66 ,  G01R1/067 ,  G01R31/265 ,  C23C16/32 ,  C23C16/52 ,  C30B25/16 ,  C30B29/36

摘要： A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.

公开(公告)号：US20220173001A1

公开(公告)日：2022-06-02

申请号：US17456506

申请日：2021-11-24

申请人： Showa Denko K.K.

发明人： Naoto ISHIBASHI ,  Koichi MURATA ,  Hidekazu TSUCHIDA

IPC分类号： H01L21/66 ,  H01L21/02

摘要： A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.

公开(公告)号：US20200083330A1

公开(公告)日：2020-03-12

申请号：US16616780

申请日：2018-04-19

申请人： SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

发明人： Keisuke FUKADA ,  Naoto ISHIBASHI ,  Akira BANDO ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Kazukuni HARA ,  Masami NAITO ,  Hideyuki UEHIGASHI ,  Hiroaki FUJIBAYASHI ,  Hirofumi AOKI ,  Toshikazu SUGIURA ,  Katsumi SUZUKI

IPC分类号： H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

摘要： A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

公开(公告)号：US20170345658A1

公开(公告)日：2017-11-30

申请号：US15534317

申请日：2015-12-08

申请人： SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry

发明人： Keisuke FUKADA ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Hideyuki UEHIGASHI ,  Hiroaki FUJIBAYASHI ,  Masami NAITO ,  Kazukuni HARA ,  Takahiro KOZAWA ,  Hirofumi AOKI

IPC分类号： H01L21/205 ,  C30B25/20 ,  C30B25/18 ,  C30B25/14 ,  C23C16/455 ,  C30B29/36 ,  C23C16/42

CPC分类号： H01L21/205 ,  C23C16/325 ,  C23C16/42 ,  C23C16/455 ,  C23C16/4557 ,  C23C16/45574 ,  C30B25/14 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

摘要： A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.