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    LAMINATED TYPE CERAMIC ELECTRONIC PARTS
    52.
    发明申请
    LAMINATED TYPE CERAMIC ELECTRONIC PARTS 有权
    层压型陶瓷电子部件

    公开(公告)号：US20120162858A1

    公开(公告)日：2012-06-28

    申请号：US13300952

    申请日：2011-11-21

    申请人： Hirobumi TANAKA ,  Makoto ENDO ,  Satoko UEDA ,  Daisuke UEDA ,  Shogo MUROSAWA ,  Daisuke YOSHIDA ,  Kenta ONO ,  Minoru OGASAWARA ,  Tatsuya KIKUCHI

    发明人： Hirobumi TANAKA ,  Makoto ENDO ,  Satoko UEDA ,  Daisuke UEDA ,  Shogo MUROSAWA ,  Daisuke YOSHIDA ,  Kenta ONO ,  Minoru OGASAWARA ,  Tatsuya KIKUCHI

    IPC分类号： H01G4/12

    CPC分类号： H01G4/1227 ,  H01G4/1281 ,  H01G4/30

    摘要： A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO3 (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO2.

    摘要翻译： 一种多层陶瓷电子部件，其特征在于，具有层叠有电介质层和内部电极层的元件体。 电介质层由介电陶瓷组合物构成，包括： 具有由式ABO 3表示的钙钛矿结构的化合物（A是选自Ba，Ca和Sr中的至少一种; B是选自Ti，Zr和Hf中的至少一种）; Mg的氧化物; 包括Sc和Y的稀土元素的氧化物; 和包含Si的氧化物。 电介质陶瓷组合物包含存在于电介质颗粒之间的多个电介质颗粒和晶界。 在晶界中，当Mg和Si的含量比分别设定为D（Mg）和D（Si）时，D（Mg）以MgO计为0.2〜1.8重量％，D（Si）为0.4〜8.0 重量％。

    Method for manufacturing a ceramic capacitor having varistor characteristics
    57.
    发明授权
    Method for manufacturing a ceramic capacitor having varistor characteristics 失效
    具有变阻器特性的陶瓷电容器的制造方法

    公开(公告)号：US5266079A

    公开(公告)日：1993-11-30

    申请号：US582223

    申请日：1991-08-05

    申请人： Atsushi Iga

    发明人： Atsushi Iga

    IPC分类号： C04B35/47 ,  H01G4/12 ,  H01G4/35 ,  H01G7/00 ,  H01G4/06

    CPC分类号： H01G4/35 ,  C04B35/47 ,  H01G4/1281 ,  Y10T29/417 ,  Y10T29/435

    摘要： The elements of the present invention are used for circuits in electronic devices and the objective is to absorb the noises and surges occurring in the circuits. In order to achieve the above objective, the present invention discloses a method for manufacturing a ceramic capacitor having varistor characteristics comprising the steps of; adding a sintering accelerant mainly forming a liquid phase at a high temperature, a semiconducting accelerant that can form a solid solution with perovskite type oxides, a control agent to control the grain growth for porous sintering and a forming agent to form a grain boundary depletion layer which also functions as a control agent to control the grain growth, to perovskite type oxides powder made of the materials of SrTiO.sub.3 as a main component, mixing and forming followed by sintering to a porous body; being made semiconductive by reduction and diffusing oxygen and oxidizing the forming agent to form a grain boundary depletion layer in the oxidizing atmosphere so as to form a barrier in the grain boundary and electrodes, thereby having excellent ability to absorb the above noises and surges.

    摘要翻译： PCT No.PCT / JP90 / 00377 Sec。 371日期：1991年8月5日 102（e）日期1991年8月5日PCT 1990年3月20日PCT公布。 出版物WO90 / 1990年10月18日。本发明的元件用于电子设备中的电路，其目的是吸收电路中发生的噪声和浪涌。 为了实现上述目的，本发明公开了一种具有变阻器特性的陶瓷电容器的制造方法，包括以下步骤： 添加主要在高温下形成液相的烧结促进剂，能够形成具有钙钛矿型氧化物的固溶体的半导体促进剂，控制多孔烧结用晶粒生长的控制剂和成形剂，形成晶界耗尽层 其还用作控制晶粒生长的控制剂，以SrTiO 3材料为主要成分的钙钛矿型氧化物粉末，混合形成，随后烧结至多孔体; 通过还原和扩散氧而形成半导体，并氧化形成剂以在氧化气氛中形成晶界耗尽层，从而在晶界和电极中形成阻挡层，从而具有优异的吸收上述噪声和浪涌的能力。

    Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation
    58.
    发明授权
    Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation 失效
    介电陶瓷材料与晶粒之间具有绝缘边界，以及制备工艺

    公开(公告)号：US4405478A

    公开(公告)日：1983-09-20

    申请号：US443781

    申请日：1982-11-22

    申请人： Kiyoshi Murase ,  Nobutatsu Yamaoka ,  Masayuki Fujimoto

    发明人： Kiyoshi Murase ,  Nobutatsu Yamaoka ,  Masayuki Fujimoto

    IPC分类号： C04B35/47 ,  H01G4/12 ,  C04B35/46 ,  H01B3/12

    CPC分类号： H01G4/1281 ,  C04B35/47

    摘要： A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 90.68-99.88 wt. % SrTiO.sub.3, 0.07-5.32 wt. % Nb.sub.2 O.sub.5, and 0.05-4.00 wt. % GeO.sub.2. The secondary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.90 wt. % PbO, 0.11-4.34 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

    摘要翻译： 由主要和次要成分组成的介电陶瓷材料，其组合形成多晶陶瓷本身，并且绝缘物质在陶瓷本身的整个晶界处扩散，以增加表观相对介电常数。 主要成分以相对比例包含90.68-99.88wt。 ％SrTiO 3，0.07-5.32wt。 ％Nb2O5和0.05-4.00wt。 ％GeO2。 次要成分包含0.02-0.10wt。 部分SiO2和0.01-0.03wt。 部分Al2O3相对于100wt。 主要成分的一部分，SiO 2与Al 2 O 3的重量比为1.5-5.0。 绝缘物质包含0.03-2.90重量％ ％PbO，0.11-4.34wt。 ％Bi 2 O 3和0.001-0.18wt。 ％B2O3相对于初级和次级成分的总重量。 在陶瓷体的制造中，绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。 然后将涂覆的陶瓷体加热，使绝缘物质扩散到其晶间界面。

    Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation
    59.
    发明授权
    Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation 失效
    介电陶瓷材料与晶粒之间具有绝缘边界，以及制备工艺

    公开(公告)号：US4405474A

    公开(公告)日：1983-09-20

    申请号：US443775

    申请日：1982-11-22

    申请人： Kiyoshi Murase ,  Nobutatsu Yamaoka ,  Masayuki Fujimoto

    发明人： Kiyoshi Murase ,  Nobutatsu Yamaoka ,  Masayuki Fujimoto

    IPC分类号： H01B3/12 ,  C04B35/47 ,  H01G4/12 ,  C04B35/46

    CPC分类号： H01G4/1281 ,  C04B35/47

    摘要： A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise in relative proportions, 96.70-99.83 wt. % SrTiO.sub.3, 0.15-2.30 wt. % WO.sub.3, and 0.02-1.00 wt. % CuO. The secondary ingredients comprise 0.02-0.10 wt %. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.003-2.83 wt. % PbO, 0.10-4.30 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

    摘要翻译： 由主要和次要成分组成的介电陶瓷材料，其组合形成多晶陶瓷本身，并且绝缘物质在陶瓷本身的整个晶界处扩散，以增加表观相对介电常数。 主要成分包括相对比例为96.70-99.83wt。 ％SrTiO 3，0.15-2.30重量％ ％WO3和0.02-1.00wt。 ％CuO。 次要成分占0.02-0.10重量％。 部分SiO2和0.01-0.03wt。 部分Al2O3相对于100wt。 主要成分的一部分，SiO 2与Al 2 O 3的重量比为1.5-5.0。 绝缘物质包含0.003-2.83wt。 ％PbO，0.10-4.30wt。 ％Bi 2 O 3和0.001-0.18wt。 ％B2O3相对于初级和次级成分的总重量。 在陶瓷体的制造中，绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。 然后将涂覆的陶瓷体加热，使绝缘物质扩散到其晶间界面。

    Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation
    60.
    发明授权
    Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation 失效
    介电陶瓷材料与晶粒之间具有绝缘边界，以及制备工艺

    公开(公告)号：US4405472A

    公开(公告)日：1983-09-20

    申请号：US443773

    申请日：1982-11-22

    申请人： Kiyoshi Murase ,  Nobutatsu Yamaoka ,  Masayuki Fujimoto

    发明人： Kiyoshi Murase ,  Nobutatsu Yamaoka ,  Masayuki Fujimoto

    IPC分类号： H01B3/12 ,  C04B35/47 ,  H01G4/12 ,  C04B35/46

    CPC分类号： C04B35/47 ,  H01G4/1281

    摘要： A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 95.18-99.65 wt. % SrTiO.sub.3, 0.33-3.32 wt. % Ta.sub.2 O.sub.5, and 0.02-1.50 wt. % CuO. The secondary ingredients comprise 0.02-0.10 wt. % part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.50 to 5.0. The insulating substances comprise 0.03-2.75 wt. % PbO, 0.11-4.22 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

    摘要翻译： 由主要和次要成分组成的介电陶瓷材料，其组合形成多晶陶瓷本身，并且绝缘物质在陶瓷本身的整个晶界处扩散，以增加表观相对介电常数。 主要成分以相对比例包含95.18-99.65wt。 ％SrTiO3，0.33-3.32wt。 ％Ta2O5和0.02-1.50wt。 ％CuO。 次要成分包含0.02-0.10wt。 ％部分SiO 2和0.01-0.03重量％ 部分Al2O3相对于100wt。 主要成分的一部分，SiO 2与Al 2 O 3的重量比为1.50〜5.0。 绝缘物质包含0.03-2.75重量％ ％PbO，0.11-4.22wt。 ％Bi 2 O 3和0.001-0.18wt。 ％B2O3相对于初级和次级成分的总重量。 在陶瓷体的制造中，绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。 然后将涂覆的陶瓷体加热，使绝缘物质扩散到其晶间界面。